IRF8714TRPBF vs IRLL024NTRPBF Comparison

Detailed side-by-side comparison of IRF8714TRPBF by Infineon and IRLL024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF8714TRPBF IRLL024NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.22
FET Type N-Channel MOSFET, Metal Oxide
Technology HEXFET / StrongIRFET (planar MOSFET) HEXFET Power MOSFET
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at TA=25C 14 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 4.4 A
On-State Resistance (RDS(on)) max at VGS=10V 8.7 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical range] Logic Level (5 V drive capable)
Gate Charge (Qg) typical 8.1 nC β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Power Dissipation (PD) at TA=25C 2.5 W β€”
Operating Temperature Range -55C to +150C (junction) β€”
Package SO-8 (8-SOIC) SOT-223 (4-pin)
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Avalanche Rated Yes β€”
Lead-Free / RoHS Lead-Free / RoHS Compliant β€”
MSL Level 1 (per Infineon package qualification) β€”
Polarity β€” N-Channel
Operating Mode β€” Enhancement Mode
V(BR)DSS (Drain-Source Breakdown Voltage) β€” 55 V
Continuous Drain Current (ID) at Ta β€” 3.1 A
Static Drain-Source On-Resistance (RDS(on)) β€” 0.065 ohm
Total Gate Charge (Qg) β€” 10.4 nC
Maximum Power Dissipation (Pd) at Ta β€” 1.0 W
Maximum Operating Junction Temperature β€” 175 C
RoHS Status β€” Compliant

Datasheets & Resources

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