IRF8736TRPBF vs IRLML0040TRPBF Comparison

Detailed side-by-side comparison of IRF8736TRPBF by Infineon and IRLML0040TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLML0040TRPBF IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon

IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon

IRLML0040TRPBF βœ“ Active

Specification Comparison

Parameter IRF8736TRPBF IRLML0040TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.27 $0.16
FET Type N-Channel N-Channel
Technology StrongIRFET / HEXFET IR MOSFET / HEXFET
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) at TA=25C 18 A 3.6 A
Power Dissipation (PD) Max at TA=25C 2.5 W β€”
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V β€”
Gate Charge (Qg) Typical 17 nC β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Package SO-8 (8-SO, MS-012AA) Micro3 (SOT-23)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) β€”
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
Avalanche Rated Yes (fully characterized avalanche voltage) β€”
Configuration Single β€”
Packaging Tape & Reel (TRPBF suffix) β€”
Drain-to-Source Voltage (VDS) β€” 40 V
Pulsed Drain Current (IDM) β€” 14 A
RDS(on) Max at VGS=10V β€” 56 mOhm
Gate-to-Source Voltage (VGS) Max β€” [DATA_NEEDED: VGS maximum rating]
Total Gate Charge (Qg) β€” 2.6 nC
Power Dissipation (PD) at TA=25C β€” 1.3 W
Operating Junction Temperature β€” -55C to +150C
Qualification Level β€” Consumer (per JEDEC JSD47F)
Moisture Sensitivity Level β€” MSL1 (per IPC/JEDEC J-STD-020D)
RoHS Compliance β€” Compliant (no lead, no bromide, no halogen)

Datasheets & Resources

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