IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon
MPN: IRLML0040TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.46 | $0.46 |
| 10 | $0.41 | $4.10 |
| 100 | $0.32 | $32.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
| 3,000 | $0.16 | $480.00 |
IRLML0040TRPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching element used to route or regulate power in electronic circuits. It belongs to the discrete-semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. Within Infineon's portfolio, the IR MOSFET family targets logic-level, low-RDS(on) switching where the gate can be driven directly from a microcontroller or a low-voltage gate driver without a charge pump.
Key specifications include a maximum drain-to-source voltage of 40V, continuous drain current of 3.6A at TA=25C (power dissipation 1.3W), pulsed drain current capability up to 14A, and an operating junction temperature range of -55C to +150C. The device is qualified to the Consumer level per JEDEC JSD47F, MSL1 per IPC/JEDEC J-STD-020D, and is RoHS compliant containing no lead, bromide, or halogen.
The IRLML0040TRPBF leverages Infineon's mature HEXFET process, which combines a vertical DMOS cell structure with optimized gate charge for low switching losses. The 56 mOhm RDS(on) at 10V VGS and 2.6 nC Qg place this part in the 'low-side switch / small buck converter' category - it is suitable for synchronous-rectifier positions where footprint and Qg are more critical than absolute lowest RDS(on).
Typical applications include DC-DC converter synchronous rectifiers, load switches in battery-powered portable devices, USB power-path management, LED driver low-side switches, and small motor / solenoid drivers in consumer electronics. Its 40V rating also provides sufficient headroom for 12V automotive subsystems and 19V notebook adapter rails.
When designing with this part, ensure VGS reaches the full enhancement voltage (10V typical for the rated RDS(on)) to minimize conduction loss. A gate-source pull-down resistor of 10 kOhm is recommended to keep the device off during MCU reset, and the exposed tab of the Micro3 package should be tied to source to maximize copper dissipation.
This page synthesizes distributor stock data, parametric drop-in alternatives, and practical PCB-layout guidance beyond what the manufacturer datasheet alone provides, including cross-brand equivalents and detailed thermal considerations for the Micro3 footprint.
Drop-in alternatives for IRLML0040TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLML0040TRPBF (same form factor and footprint) β differing in Continuous Drain Current (ID) at TA=25C, Package, Technology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRLML0100TRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRLML2502TRPBF
β Drop-Inπ Reference alternative (not in catalog)
VB1330
β Drop-Inπ Reference alternative (not in catalog)
IRLML0040TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TA=25C | 3.6 A |
| Pulsed Drain Current (IDM) | 14 A |
| RDS(on) Max at VGS=10V | 56 mOhm |
| Total Gate Charge (Qg) | 2.6 nC |
| Power Dissipation (PD) at TA=25C | 1.3 W |
| Operating Junction Temperature | -55C to +150C |
| Technology | IR MOSFET / HEXFET |
| Package | Micro3 (SOT-23) |
| Mounting Type | Surface Mount |
| Qualification Level | Consumer (per JEDEC JSD47F) |
| Moisture Sensitivity Level | MSL1 (per IPC/JEDEC J-STD-020D) |
| RoHS Compliance | Compliant (no lead, no bromide, no halogen) |
IRLML0040TRPBF Pin Configuration
| Pin 1 | Gate (G) β Gate input - drive to 10V for rated RDS(on) |
| Pin 2 | Source (S) β Source - typically tied to GND in low-side switching |
| Pin 3 | Drain (D) β Drain - load or supply side depending on topology |
Safe Operating Area (estimated from datasheet SOA curves)
Typical Applications
IRLML0040TRPBF is suitable for 6 applications: DC-DC Converter Synchronous Rectifier, Battery Load Switch (USB / Power Path), LED Driver Low-Side Switch, Small Motor / Solenoid Driver, 12V Automotive Subsystem Switch, Portable / Wearable Device Power Switch.
DC-DC Converter Synchronous Rectifier
The IRLML0040TRPBF serves as the low-side synchronous rectifier in buck converters for 12V-to-3.3V/5V rails in portable electronics and IoT modules. Its 2.6 nC gate charge and 56 mOhm RDS(on) minimize switching losses at 500 kHz-1 MHz switching frequencies, while the 40V VDS rating provides comfortable headroom for 12V input transients. Micro3 footprint keeps the rectifier compact next to the high-side switch.
Recommended
Battery Load Switch (USB / Power Path)
The IRLML0040TRPBF operates as a low-side load-disconnect switch between a lithium cell and downstream circuitry in USB power-path and battery-management designs. At 3.6A continuous rating and 1.3W power dissipation in Micro3, it cleanly switches 5V/2.4A USB loads. The 40V VDS rating handles hot-plug transients on VBUS without avalanche stress, and the 2.6 nC Qg allows direct GPIO drive from a battery-management MCU.
Recommended
LED Driver Low-Side Switch
The IRLML0040TRPBF drives LED strings from 5V to 24V supplies as a low-side current sink or PWM switch. Its 3.6A ID rating covers multi-amp LED arrays used in indicator strips and architectural lighting, while 2.6 nC Qg allows PWM dimming above 20 kHz without audible noise. The SOT-23 footprint enables dense LED matrix layouts where many parallel channels need their own switch.
Recommended
Small Motor / Solenoid Driver
The IRLML0040TRPBF switches small DC motors, solenoids, and relay coils in consumer appliances, toys, and low-voltage actuators. Its 14A pulsed drain current handles motor inrush transients, while 40V VDS tolerates the back-EMF of 12V and 24V coils. A 10 kOhm gate pull-down resistor keeps the FET off during MCU reset, preventing accidental motor activation at power-up.
Recommended
12V Automotive Subsystem Switch
The IRLML0040TRPBF controls 12V automotive loads such as interior lighting, sensor power, and infotainment rails. Its 40V VDS rating covers 12V battery plus load-dump transients up to ~35V, while 3.6A continuous covers small accessory loads. Note: this is the Consumer-grade part - for AEC-Q100-qualified automotive applications, choose an automotive-grade N-FET instead.
Recommended
Portable / Wearable Device Power Switch
The IRLML0040TRPBF disconnects battery rails in portable and wearable devices, including fitness bands, hearables, and compact IoT nodes. Its 1.3W dissipation in Micro3 keeps thermal rise minimal in wearable enclosures, and 2.6 nC Qg allows direct GPIO drive from low-power MCUs without driver losses. The RoHS/halogen-free compliance simplifies global consumer certification.
Recommended
Recommended Products Summary
Engineering reference data for IRLML0040TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLML0100TRPBF | IRLML2502TRPBF | VB1330 |
|---|---|---|---|---|
| Package | Micro3 (SOT-23) | Micro3 (SOT-23) - same | Micro3 (SOT-23) - same | Micro3 (SOT-23) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi |
| VDS Max | 40 V | 100 V | 20 V | 30 V |
| Power Dissipation (TA=25C) | 1.3 W | 1.3 W (same Micro3) | 1.3 W (same Micro3) | 1.56 W (per Micros cross-listing) |
| Operating Junction Temperature | -55C to +150C | -55C to +150C (typical for IR MOSFET family) | -55C to +150C (typical for IR MOSFET family) | -55C to +150C (per Micros cross-listing) |
Key Differentiators
- Higher voltage rating than lower-cost Chinese alternative (vs VB1330)
- Mature IR/Infineon process with established long-term supply (vs VB1330)
- Higher voltage margin than same-family low-VDS part (vs IRLML2502TRPBF)
Design Notes
Estimated: at TA=25C with the minimum 1oz copper Micro3 footprint, the IRLML0040TRPBF can dissipate 1.3W. Conduction loss P=I^2*R at 3.6A and 56 mOhm is ~0.73W, so steady-state junction rise is roughly 0.73W * (theta_JA ~ 150 C/W in free air) = ~110C above ambient - derate current to 2A or expand copper pour to a DPAK-style layout if continuous 3.6A operation is required.
Use the standard Micro3/SOT-23 land pattern with pad 1 (gate) connected to the MCU GPIO via a 10 kOhm pull-down resistor to keep the FET off during MCU reset. Place a 100 nF ceramic bypass capacitor on the gate-driver rail near the IC if a separate gate driver is used. Drain and source traces should be sized for the application current - 1oz copper at 1mm width handles roughly 3A with 10C temperature rise.
Do not drive the gate directly from a 3.3V GPIO expecting the rated 56 mOhm RDS(on) - the rated on-resistance is at VGS=10V. At VGS=3.3V the RDS(on) can be 2-3x higher, doubling conduction loss. Also verify VGS(max) rating before applying gate voltages above 10V; consult the datasheet absolute maximum table before using a 12V gate drive.
Compliance Information
Per Infineon IRLML0040 datasheet: RoHS compliant (no lead, no bromide, no halogen); MSL1 per IPC/JEDEC J-STD-020D; Consumer qualification per JEDEC JSD47F. Not AEC-Q100 qualified - choose an automotive-grade Infineon part for AEC-Q100 applications.
