IRFL024ZTRPBF vs IRFR3710ZTRLPBF Comparison

Detailed side-by-side comparison of IRFL024ZTRPBF by Infineon and IRFR3710ZTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFL024ZTRPBF IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRFL024ZTRPBF βœ“ Active
Infineon
IRFR3710ZTRLPBF IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF βœ“ Active

Specification Comparison

Parameter IRFL024ZTRPBF IRFR3710ZTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.26 $0.58
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET) MOSFET (Metal Oxide), HEXFET
Drain-Source Voltage (Vds) 55 V β€”
Continuous Drain Current (Id) at Ta=25C 5.1 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Rds(on) Max at Vgs=10V 57.5 mOhm β€”
Gate Charge (Qg) Typ 9.1 nC β€”
Gate-Source Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] β€”
Power Dissipation (Pd) at Ta=25C 1 W β€”
Operating Temperature Range -55C to +150C β€”
Package SOT-223 TO-252AA (DPAK), 3-pin (2+tab)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (+ drain tab) β€”
MSL Level 1 β€”
RoHS Status Compliant Compliant (Pb-free PBF suffix)
Lead-Free Yes β€”
Drain to Source Voltage (Vdss) β€” 100 V
Continuous Drain Current (Id) @ 25C (Tc) β€” 42 A
Max Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V β€” 18 mOhm
Gate-Source Voltage (Vgs) max β€” [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th) typ) β€” [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) β€” 69 nC
Power Dissipation (Pd) @ Tc=25C β€” 140 W
Avalanche Energy Rating (EAS) β€” 150 mJ
Maximum Junction Temperature β€” 175 C
Automotive Qualification β€” AEC-Q101 (per Lisleapex listing)
Configuration β€” Single with built-in diode
Operating Temperature β€” -55 C to +175 C (TJ)

Datasheets & Resources

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