IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon
MPN: IRFR3710ZTRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
| 2,500 | $0.58 | $1,450.00 |
IRFR3710ZTRLPBF Overview
What is an N-channel HEXFET power MOSFET? A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. The HEXFET process is a proprietary Infineon (formerly International Rectifier) hexagonal-cell planar technology that minimizes on-resistance per unit die area. In a broader taxonomy: power MOSFET -> discrete semiconductor -> semiconductor -> electronic component. N-channel MOSFETs are preferred for low-side switching because they offer lower RDS(on) than equivalently sized P-channel parts, making them the default choice for synchronous rectification, motor drive and DC-DC conversion.
Key features of this part include 175°C maximum junction temperature, fast switching speed, improved repetitive avalanche rating, 69 nC total gate charge, and an Avalanche Energy Rating (EAS) of 150 mJ. The 100 V drain-source breakdown voltage and 42 A continuous drain current make it suitable for high-current switching applications operating from 12 V, 24 V or 48 V rails.
The DPAK (TO-252AA) surface-mount package provides a low thermal resistance path through the tab to the PCB copper pour, enabling 140 W power dissipation with appropriate board layout. Its 3-pin (2+tab) configuration matches the industry-standard DPAK footprint used by hundreds of similar 100 V MOSFETs, simplifying PCB design.
Typical applications include DC-DC converter primary switches, synchronous rectification in switch-mode power supplies, motor control H-bridges, solenoid drivers, and automotive ECU loads. Designers often select this part for 12 V/24 V automotive and industrial systems where high current handling and rugged avalanche performance are required.
When designing with this MOSFET, prioritize a low-inductance gate-drive loop and a sufficiently large PCB copper area under the tab to keep junction temperature within SOA. The 18 mΩ on-resistance means conduction losses at 20 A are roughly 7.2 W; combine this with switching losses to confirm thermal headroom.
This page synthesizes distributor pricing, drop-in DPAK alternatives, and practical thermal/layout notes that go beyond what the bare datasheet provides, enabling faster design decisions.
Drop-in alternatives for IRFR3710ZTRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFR3710ZTRLPBF (same form factor and footprint) — differing in Package, Technology, RoHS Status, FET Type, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR3710ZTRPBF
✅ Drop-In✓ In Stock
$0.42 / Unit
View Datasheet →IRFR3710ZPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR3710ZTRRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR024NTRPBF
✅ Drop-In✓ In Stock
$0.31 / Unit
View Datasheet →IRFR9024NTRPBF
✅ Drop-In✓ In Stock
$0.17 / Unit
View Datasheet →IRFL024ZTRPBF
✅ Drop-In✓ In Stock
$0.26 / Unit
View Datasheet →BSS123NH6327XTSA1
✅ Drop-In✓ In Stock
$0.085 / Unit
View Datasheet →IRFR3710ZTRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide), HEXFET |
| Drain to Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) @ 25C (Tc) | 42 A |
| RDS(on) max @ VGS=10V | 18 mOhm |
| Total Gate Charge (Qg) | 69 nC |
| Power Dissipation (Pd) @ Tc=25C | 140 W |
| Avalanche Energy Rating (EAS) | 150 mJ |
| Maximum Junction Temperature | 175 C |
| Package | TO-252AA (DPAK), 3-pin (2+tab) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Lisleapex listing) |
| Configuration | Single with built-in diode |
| Operating Temperature | -55 C to +175 C (TJ) |
| RoHS Status | Compliant (Pb-free PBF suffix) |
IRFR3710ZTRLPBF Pin Configuration
| Pin 1 | Gate — Gate drive input; requires VGS > threshold (typ ~3-4V) for full enhancement |
| Pin 2 | Drain (Tab) — Drain connection internally tied to the metal tab; main current and thermal path |
| Pin 3 | Source — Source connection; typically connected to ground in low-side switching applications |
Safe Operating Area (DC)
Typical Applications
IRFR3710ZTRLPBF is suitable for 7 applications: 24V DC-DC Converter Primary Switch, Synchronous Rectification in SMPS, H-Bridge Motor Drive (12-48V), Automotive ECU Load Switching, Solenoid and Relay Driver, Battery Management and Protection, Hot-Swap and Inrush Current Limiter.
24V DC-DC Converter Primary Switch
The IRFR3710ZTRLPBF suits 24V buck/boost primary-side switching where its 100V Vdss provides >4x headroom over nominal rail, allowing operation across load-dump transients (per ISO 7637-2). Its 18 mOhm RDS(on) keeps conduction losses low at 42A peaks, while 69 nC Qg supports switching frequencies of 100-200 kHz with moderate gate-drive loss. A typical 24V-to-12V buck stage at 50% duty cycles the FET at 100 kHz; estimated switching loss is roughly Psw = 0.5 × Vds × Id × (tr+tf) × fsw. The 140W Pd rating and DPAK thermal path handle sustained currents when mounted on >=1 sq.in. copper pour. Place the FET near the input capacitor to minimize the high-di/dt loop, and use a gate resistor of 10-22 ohm to suppress ringing.
Recommended
Synchronous Rectification in SMPS
In a 24V-input forward or half-bridge converter, the IRFR3710ZTRLPBF serves as the synchronous rectifier on the secondary side, replacing a Schottky diode to cut conduction loss. Its body diode (intrinsic to HEXFET) provides natural dead-time conduction, eliminating anti-parallel diode requirement. At 20A load and 0.018 ohm RDS(on), conduction loss is ~7.2W versus ~14W in a comparable 100V Schottky - roughly a 50% reduction. The 150 mJ EAS rating absorbs leakage-inductance spike energy at turn-off. Use a low-Vth gate driver with 10V enhancement to fully enhance the channel. Place the sync-FET tab on a thermal copper pour sized so that RthetaJA stays below 40 C/W.
Recommended
H-Bridge Motor Drive (12-48V)
The IRFR3710ZTRLPBF can be paired as the low-side FET in a discrete H-bridge driving brushed DC motors from 12V or 24V supplies. Its 42A continuous rating covers most sub-1HP motors; the 100V Vdss absorbs back-EMF spikes from inductive loads without avalanche breakdown (when EAS limits are respected). Estimated conduction loss at 20A motor current is ~7.2W per FET - design a 4-layer PCB with 2 oz copper on inner layers to keep Tj rise below 50C. Add a 10k gate pull-down resistor to ensure the FET stays off during MCU reset. The 69 nC Qg is compatible with most 1-2A gate drivers like the DRV8718SQRHARQ1.
Recommended
Automotive ECU Load Switching
AEC-Q101 qualification (per Lisleapex listing) makes the IRFR3710ZTRLPBF acceptable for automotive ECU applications, including solenoid drivers, lighting relays, and load-dump-protected switches. Its 100V Vdss withstands the 35V load-dump transient specified in ISO 7637-2, and 175C Tj supports under-hood operation. The DPAK package withstands the -40C to +125C automotive grade temperature range with margin. Place a TVS clamp (e.g. SMBJ6.0A for 12V systems) at the drain to limit inductive flyback peaks. Estimated: at 10A continuous and VIN=13.5V, conduction loss is ~1.8W with comfortable thermal headroom on a 0.5 sq.in. copper pour.
Recommended
Solenoid and Relay Driver
Solenoid valves, relays, and inductors require a freewheeling path when de-energized. The IRFR3710ZTRLPBF handles flyback currents through its intrinsic body diode (no external diode needed) and dissipates the resulting EAS energy. For a 1H solenoid switched at 1A, the stored energy is 0.5 J - well above the 150 mJ EAS rating - so a snubber or TVS is required to absorb turn-off spikes. The FET's 100V Vdss provides >5x headroom over typical 12V/24V solenoid supplies. Use a 10k gate pull-down and a small RC snubber (100 ohm + 100 nF) across the drain-source for additional avalanche protection.
Recommended
Battery Management and Protection
In a 4S-8S lithium battery pack (nominal 14.4V-28.8V), the IRFR3710ZTRLPBF serves as the high-side or low-side disconnect FET, providing overcurrent and short-circuit protection. Its 18 mOhm RDS(on) keeps continuous conduction loss low: at 20A discharge, the loss is ~7.2W. The 100V Vdss handles full series-stack voltages of up to 8S Li-ion (33.6V max). For a more compact 4S design, the lower-Vdss IRFR024NTRPBF may be preferable, but the IRFR3710ZTRLPBF provides margin against transients. Estimated: at 30A continuous, junction temperature rise on a 1 sq.in. copper pour is approximately 60C above ambient - acceptable within the 175C TJ rating.
Recommended
Hot-Swap and Inrush Current Limiter
The IRFR3710ZTRLPBF enables controlled inrush current limiting when energizing large capacitive loads. By driving the gate with a slow RC ramp (e.g. 100k + 1uF = 100ms), the FET operates in linear region during turn-on, dissipating the inrush energy gradually. Its 140W Pd rating and 150 mJ EAS absorb typical inrush events. Once fully enhanced, the 18 mOhm RDS(on) provides a low-impedance path. For 48V telecom boards, this part provides adequate Vdss margin (100V). Place an NTC thermistor in parallel with the FET for additional inrush protection in extreme cases.
Recommended
Recommended Products Summary
Engineering reference data for IRFR3710ZTRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR3710ZTRPBF | IRFR3710ZPBF | IRFR3710ZTRRPBF | IRFR024NTRPBF | IRFR9024NTRPBF | IRFL024ZTRPBF | BSS123NH6327XTSA1 |
|---|---|---|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V | 55 V | -55 V (P-ch) | 55 V | 100 V |
| Continuous Drain Current (Id) | 42 A | 42 A | 42 A | 42 A | 17 A | -11 A (P-ch) | 5.4 A | 0.19 A |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel |
Key Differentiators
- High VDS rating in DPAK package (vs IRFR024NTRPBF)
- Highest continuous drain current in DPAK footprint (vs BSS123NH6327XTSA1)
- Lowest RDS(on) per package volume (vs IRFL024ZTRPBF)
Design Notes
Estimated: at 20 A continuous drain current, the IRFR3710ZTRLPBF dissipates roughly 7.2 W (P = I² × RDS(on) = 20² × 0.018). On a standard 1 sq.in. copper pour on FR4 (1 oz), the DPAK package typically achieves RthetaJA around 40-50 C/W. This yields a junction temperature rise of approximately 30-35 C above ambient - well within the 175 C Tj rating. For sustained 30 A operation, increase the copper area to >=2 sq.in. or use a 2 oz inner layer to keep Tj rise below 50 C.
Place the FET's drain tab on a substantial copper pour that serves as both electrical connection and thermal path. Use thermal vias (0.3 mm diameter, 1 mm pitch) underneath the tab to inner-layer copper spreads. Keep the high-di/dt loop (drain to source to input cap return) as small as possible - target <10 nH loop inductance. Use a 10-22 ohm gate resistor to damp ringing; a small ferrite bead on the gate can further suppress high-frequency oscillation.
Do not exceed the 150 mJ single-pulse avalanche energy (EAS) rating. When switching inductive loads such as solenoids or motors, the stored energy 0.5*L*I² can exceed EAS - in those cases add a freewheeling diode, TVS clamp (e.g. SMBJ6.0A), or RC snubber (100 ohm + 100 nF) across drain-source. Also: ensure the gate-source voltage never exceeds ±20 V; if the gate driver can produce overshoot above 20 V, add a 15 V Zener from gate to source.
For switching applications above 50 kHz, use a star-ground topology where the source pin returns directly to the input capacitor negative terminal, separate from the analog/signal ground. This prevents switching noise from coupling into sensitive analog circuits. Keep the gate-drive traces short and away from drain-source switching nodes; consider a gate-drive return trace running parallel to the gate trace to minimize loop area.
Compliance Information
Pb-free PBF suffix confirms RoHS lead-free compliance per Infineon datasheet. AEC-Q101 automotive qualification mentioned in Lisleapex listing. Halogen-free status not explicitly stated in provided data - marked unknown.
