IRFR024NTRPBF vs IRFR3710ZTRLPBF Comparison

Detailed side-by-side comparison of IRFR024NTRPBF by Infineon and IRFR3710ZTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR024NTRPBF IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF βœ“ Active
Infineon
IRFR3710ZTRLPBF IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF βœ“ Active

Specification Comparison

Parameter IRFR024NTRPBF IRFR3710ZTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.58
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Product Series HEXFET Power MOSFET (5th generation) β€”
Transistor Type N-Channel MOSFET β€”
Maximum Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) 17 A (at TC = 25 C) β€”
Pulsed Drain Current (IDM) 60 A β€”
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) β€”
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Typical Gate Charge (Qg) 13.3 nC β€”
Total Power Dissipation (PD) 45 W (at TC = 25 C) β€”
Operating Junction Temperature -55 C to +175 C β€”
Package TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK), 3-pin (2+tab)
Mounting Type Surface Mount Surface Mount
Packaging Tape and Reel (TR) β€”
RoHS Compliance Compliant (Pb-free / PbF terminations) β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
FET Type β€” N-Channel
Technology β€” MOSFET (Metal Oxide), HEXFET
Drain to Source Voltage (Vdss) β€” 100 V
Continuous Drain Current (Id) @ 25C (Tc) β€” 42 A
Max Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V β€” 18 mOhm
Gate-Source Voltage (Vgs) max β€” [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th) typ) β€” [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) β€” 69 nC
Power Dissipation (Pd) @ Tc=25C β€” 140 W
Avalanche Energy Rating (EAS) β€” 150 mJ
Maximum Junction Temperature β€” 175 C
Automotive Qualification β€” AEC-Q101 (per Lisleapex listing)
Configuration β€” Single with built-in diode
Operating Temperature β€” -55 C to +175 C (TJ)
RoHS Status β€” Compliant (Pb-free PBF suffix)

Datasheets & Resources

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