IRFR3710ZTRLPBF vs IRFR024NTRPBF Comparison

Detailed side-by-side comparison of IRFR3710ZTRLPBF by Infineon and IRFR024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR3710ZTRLPBF IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF βœ“ Active
Infineon
IRFR024NTRPBF IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF βœ“ Active

Specification Comparison

Parameter IRFR3710ZTRLPBF IRFR024NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.31
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide), HEXFET β€”
Drain to Source Voltage (Vdss) 100 V β€”
Continuous Drain Current (Id) @ 25C (Tc) 42 A β€”
Max Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
RDS(on) max @ VGS=10V 18 mOhm β€”
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max rating] β€”
Gate Threshold Voltage (Vgs(th) typ) [DATA_NEEDED: Vgs(th)] β€”
Total Gate Charge (Qg) 69 nC β€”
Power Dissipation (Pd) @ Tc=25C 140 W β€”
Avalanche Energy Rating (EAS) 150 mJ β€”
Maximum Junction Temperature 175 C β€”
Package TO-252AA (DPAK), 3-pin (2+tab) TO-252-3 (DPAK, SC-63), surface mount
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Lisleapex listing) β€”
Configuration Single with built-in diode β€”
Operating Temperature -55 C to +175 C (TJ) β€”
RoHS Status Compliant (Pb-free PBF suffix) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Product Series β€” HEXFET Power MOSFET (5th generation)
Transistor Type β€” N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) β€” 17 A (at TC = 25 C)
Pulsed Drain Current (IDM) β€” 60 A
On-Resistance (RDS(on)) β€” 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) β€” 2.0 V to 4.0 V
Typical Gate Charge (Qg) β€” 13.3 nC
Total Power Dissipation (PD) β€” 45 W (at TC = 25 C)
Operating Junction Temperature β€” -55 C to +175 C
Packaging β€” Tape and Reel (TR)
RoHS Compliance β€” Compliant (Pb-free / PbF terminations)
MSL Level β€” 1 (per JEDEC J-STD-020)

Datasheets & Resources

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