IRFR3710ZTRPBF vs IRFR6215TRLPBF Comparison

Detailed side-by-side comparison of IRFR3710ZTRPBF by Infineon and IRFR6215TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF βœ“ Active

Specification Comparison

Parameter IRFR3710ZTRPBF IRFR6215TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.38
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V -150 V
Continuous Drain Current (ID) at TC=25C 56 A β€”
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm β€”
Power Dissipation (PD) at TC=25C 140 W β€”
Operating Junction Temperature -55C to +175C β€”
Technology HEXFET (IR MOSFET) HEXFET Power MOSFET (Fifth Generation)
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Polarity β€” P-Channel
Continuous Drain Current (ID) at Tc=25C β€” -13 A
Gate-Source Voltage (VGS) max β€” Β±20 V
RDS(on) max at VGS=-10V β€” 580 mOhm
Total Gate Charge (Qg) typ β€” 44 nC
Power Dissipation (PD) at Tc=25C β€” 110 W
Maximum Operating Junction Temperature β€” 175 C
MSL Level β€” 1

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