IRFR3806TRPBF vs IRFR3607TRPBF Comparison
Detailed side-by-side comparison of IRFR3806TRPBF by Infineon and IRFR3607TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR3806TRPBF | IRFR3607TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.39 |
| Transistor Polarity | N-Channel | β |
| MOSFET Operating Mode | Enhancement | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc | 43 A | β |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | β |
| Total Gate Charge (Qg) | 22 nC | 56 nC |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | β |
| Package / Case | TO-252AA (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (planar DMOS) |
| Operating Temperature Range | -55 C to +175 C | -55C to +175C (TJ max 175C per datasheet convention) |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Number of Units in IC | 1 | β |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | β |
| Avalanche Rated | Yes (HEXFET family) | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID, Tc) | β | 56 A |
| Calculated Die Drain Current | β | 80 A |
| On-State Resistance (RDS(on)) | β | 9 mOhm @ VGS=10V, ID=46A |
| Gate Threshold Voltage (VGS(th)) | β | 4 V |
| Gate-to-Source Voltage (VGS) Max | β | +/-20 V |
| Power Dissipation (PD, Tc) | β | 140 W |
| Thermal Resistance (RthJC) | β | 1.0 C/W |
| Package | β | TO-252AA (DPAK) |
| Avalanche SOA | β | Fully characterized |
| RoHS / Lead-Free | β | Compliant / Pb-free (PBF suffix, JESD-609 e3) |