IRFR3806TRPBF vs IRFZ48NSTRLPBF Comparison
Detailed side-by-side comparison of IRFR3806TRPBF by Infineon and IRFZ48NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR3806TRPBF | IRFZ48NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $1.18 |
| Transistor Polarity | N-Channel | β |
| MOSFET Operating Mode | Enhancement | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc | 43 A | β |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | β |
| Total Gate Charge (Qg) | 22 nC | 54 nC |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | β |
| Package / Case | TO-252AA (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Number of Units in IC | 1 | β |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | β |
| Avalanche Rated | Yes (HEXFET family) | β |
| FET Type | β | N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) @ Tc=25C | β | 64 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-to-Source On-Resistance (Rds(on)) | β | 14 mΞ© at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | β | 2.0 V to 4.0 V |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation (Pd) @ Tc=25C | β | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | β | 3.8 W |
| Operating Junction Temperature | β | -55C to +175C |
| Package | β | D2PAK (TO-263) Surface Mount |
| Packaging | β | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | β | Lead-free (PBF) matte tin |
| RoHS Status | β | Compliant |
| Technology Family | β | HEXFET advanced process technology |