IRFR6215TRLPBF vs IRFR3710ZTRPBF Comparison

Detailed side-by-side comparison of IRFR6215TRLPBF by Infineon and IRFR3710ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF βœ“ Active

Specification Comparison

Parameter IRFR6215TRLPBF IRFR3710ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.42
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -150 V 100 V
Continuous Drain Current (ID) at Tc=25C -13 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed IDM]
Gate-Source Voltage (VGS) max Β±20 V β€”
RDS(on) max at VGS=-10V 580 mOhm β€”
Total Gate Charge (Qg) typ 44 nC β€”
Power Dissipation (PD) at Tc=25C 110 W β€”
Maximum Operating Junction Temperature 175 C β€”
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Technology HEXFET Power MOSFET (Fifth Generation) HEXFET (IR MOSFET)
MSL Level 1 β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
FET Type β€” N-Channel
Continuous Drain Current (ID) at TC=25C β€” 56 A
Continuous Drain Current (ID) at TC=100C β€” [DATA_NEEDED: ID at TC=100C]
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V β€” 18 mOhm
Power Dissipation (PD) at TC=25C β€” 140 W
Operating Junction Temperature β€” -55C to +175C

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