IRFR9024NTRLPBF vs IRF7205TRPBF Comparison

Detailed side-by-side comparison of IRFR9024NTRLPBF by Infineon and IRF7205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF βœ“ Active

Specification Comparison

Parameter IRFR9024NTRLPBF IRF7205TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.18
Polarity P-Channel β€”
MOSFET Operating Mode Enhancement β€”
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at TC=25C -11 A β€”
On-Resistance RDS(on) max at VGS=-10V 175 mOhm β€”
Gate-Source Voltage (VGS) max +/-20 V β€”
Power Dissipation (PD) at TC=25C 38 W β€”
Gate Charge (Qg) typical 12.7 nC β€”
Package Type TO-252AA (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Drain, Gate, Source + Tab) β€”
Technology HEXFET (Generation 5) IR HEXFET (4th generation)
Operating Temperature Range -55C to +175C β€”
Lead-Free / RoHS Yes (LPBF suffix) β€”
Reel Orientation Left (TRL suffix) β€”
FET Type β€” P-Channel MOSFET
Drain-to-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (ID) at TA=25Β°C β€” -4.6 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=-10V β€” 70 mΞ©
On-Resistance RDS(on) max @ VGS=-4.5V β€” 130 mΞ©
Gate Threshold Voltage VGS(th) β€” -1.0 V to -3.0 V
Total Gate Charge Qg β€” 27 nC
Power Dissipation (TC=25Β°C) β€” 2.5 W
Operating Junction Temperature β€” -55 Β°C to +150 Β°C
Package β€” SO-8 (8-SO)
RoHS / Lead-Free β€” Lead-Free (PBF suffix), RoHS compliant
Packaging β€” Tape & Reel (TR suffix)

Datasheets & Resources

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