IRFR9024NTRLPBF vs IRFR9024NTRPBF Comparison

Detailed side-by-side comparison of IRFR9024NTRLPBF by Infineon and IRFR9024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF βœ“ Active
Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF βœ“ Active

Specification Comparison

Parameter IRFR9024NTRLPBF IRFR9024NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.17
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement β€”
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at TC=25C -11 A β€”
On-Resistance RDS(on) max at VGS=-10V 175 mOhm β€”
Gate-Source Voltage (VGS) max +/-20 V β€”
Power Dissipation (PD) at TC=25C 38 W β€”
Gate Charge (Qg) typical 12.7 nC β€”
Package Type TO-252AA (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Drain, Gate, Source + Tab) 3
Technology HEXFET (Generation 5) HEXFET (Gen 5)
Operating Temperature Range -55C to +175C β€”
Lead-Free / RoHS Yes (LPBF suffix) β€”
Reel Orientation Left (TRL suffix) β€”
VDS (Drain-Source Voltage) β€” -55 V
Continuous Drain Current (Tc=25C) β€” -11 A
Pulsed Drain Current β€” [DATA_NEEDED: pulsed drain current]
VGS (Gate-Source Voltage) β€” Β±20 V
VGS(th) (Threshold Voltage) β€” [DATA_NEEDED: VGS(th) typical]
RDS(on) Max at VGS=-10V β€” 175 mOhm
Total Gate Charge (Qg) β€” 12.7 nC
Maximum Power Dissipation (Tc=25C) β€” 38 W
Operating Junction Temperature β€” -55C to +175C
Package β€” TO-252AA (DPAK)
RoHS Status β€” Compliant

Datasheets & Resources

Browse All Products Create BOM Request Quote