IRFR9024NTRPBF vs IRFR3710ZTRLPBF Comparison

Detailed side-by-side comparison of IRFR9024NTRPBF by Infineon and IRFR3710ZTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF βœ“ Active
Infineon
IRFR3710ZTRLPBF IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF βœ“ Active

Specification Comparison

Parameter IRFR9024NTRPBF IRFR3710ZTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.17 $0.58
Polarity P-Channel β€”
VDS (Drain-Source Voltage) -55 V β€”
Continuous Drain Current (Tc=25C) -11 A β€”
Pulsed Drain Current [DATA_NEEDED: pulsed drain current] β€”
VGS (Gate-Source Voltage) Β±20 V β€”
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] β€”
RDS(on) Max at VGS=-10V 175 mOhm β€”
Total Gate Charge (Qg) 12.7 nC 69 nC
Maximum Power Dissipation (Tc=25C) 38 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK) TO-252AA (DPAK), 3-pin (2+tab)
Mounting Type Surface Mount Surface Mount
Pin Count 3 β€”
Technology HEXFET (Gen 5) MOSFET (Metal Oxide), HEXFET
RoHS Status Compliant Compliant (Pb-free PBF suffix)
FET Type β€” N-Channel
Drain to Source Voltage (Vdss) β€” 100 V
Continuous Drain Current (Id) @ 25C (Tc) β€” 42 A
Max Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V β€” 18 mOhm
Gate-Source Voltage (Vgs) max β€” [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th) typ) β€” [DATA_NEEDED: Vgs(th)]
Power Dissipation (Pd) @ Tc=25C β€” 140 W
Avalanche Energy Rating (EAS) β€” 150 mJ
Maximum Junction Temperature β€” 175 C
Automotive Qualification β€” AEC-Q101 (per Lisleapex listing)
Configuration β€” Single with built-in diode
Operating Temperature β€” -55 C to +175 C (TJ)

Datasheets & Resources

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