IRFR9024NTRPBF vs IRFR9024NTRLPBF Comparison

Detailed side-by-side comparison of IRFR9024NTRPBF by Infineon and IRFR9024NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF βœ“ Active
Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF βœ“ Active

Specification Comparison

Parameter IRFR9024NTRPBF IRFR9024NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.17 $0.32
Polarity P-Channel P-Channel
VDS (Drain-Source Voltage) -55 V β€”
Continuous Drain Current (Tc=25C) -11 A β€”
Pulsed Drain Current [DATA_NEEDED: pulsed drain current] β€”
VGS (Gate-Source Voltage) Β±20 V β€”
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] β€”
RDS(on) Max at VGS=-10V 175 mOhm β€”
Total Gate Charge (Qg) 12.7 nC β€”
Maximum Power Dissipation (Tc=25C) 38 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 3 3 (Drain, Gate, Source + Tab)
Technology HEXFET (Gen 5) HEXFET (Generation 5)
RoHS Status Compliant β€”
MOSFET Operating Mode β€” Enhancement
Drain-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at TC=25C β€” -11 A
On-Resistance RDS(on) max at VGS=-10V β€” 175 mOhm
Gate-Source Voltage (VGS) max β€” +/-20 V
Power Dissipation (PD) at TC=25C β€” 38 W
Gate Charge (Qg) typical β€” 12.7 nC
Package Type β€” TO-252AA (DPAK)
Operating Temperature Range β€” -55C to +175C
Lead-Free / RoHS β€” Yes (LPBF suffix)
Reel Orientation β€” Left (TRL suffix)

Datasheets & Resources

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