IRFR9120NTRLPBF vs IRFR120NTRLPBF Comparison
Detailed side-by-side comparison of IRFR9120NTRLPBF by Infineon and IRFR120NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR9120NTRLPBF | IRFR120NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.62 |
| Transistor Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) | -100 V | 100 V |
| Continuous Drain Current (ID) | -6.6 A (Tc) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | -2 V to -4 V | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | 480 mOhm max @ VGS = -10 V | β |
| Gate Charge (Qg) | 18 nC (typ) | β |
| Power Dissipation (PD) | 40 W (Tc) | β |
| Operating Temperature Range | -55C to +150C (Tj) | β |
| Package | TO-252AA (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Technology | IR MOSFET (planar) | IR MOSFET (HEXFET) |
| MSL Level | 1 | β |
| RoHS Status | Compliant (Pb-free) | Compliant |
| Lead-Free | Yes | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TC=25C | β | 9.4 A |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) max at VGS=10V | β | 210 mΞ© |
| Total Gate Charge (Qg) | β | 16.7 nC |
| Power Dissipation (PD) at TC=25C | β | 48 W |
| Operating Junction Temperature Range | β | -55C to +175C |
| Avalanche Energy Rated | β | Yes (fully avalanche rated) |
| Lead-Free Finish | β | Yes (Pb-free) |