IRFZ48NSTRLPBF vs IRFR3806TRPBF Comparison

Detailed side-by-side comparison of IRFZ48NSTRLPBF by Infineon and IRFR3806TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ48NSTRLPBF IRFR3806TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.52
FET Type N-Channel Power MOSFET β€”
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) @ Tc=25C 64 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΞ© at VGS = 10 V β€”
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Total Gate Charge (Qg) 54 nC 22 nC
Gate-to-Source Voltage (VGS) max Β±20 V β€”
Power Dissipation (Pd) @ Tc=25C 130 W β€”
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W β€”
Operating Junction Temperature -55C to +175C β€”
Package D2PAK (TO-263) Surface Mount β€”
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) β€”
Lead Finish Lead-free (PBF) matte tin β€”
RoHS Status Compliant β€”
Technology Family HEXFET advanced process technology β€”
Transistor Polarity β€” N-Channel
MOSFET Operating Mode β€” Enhancement
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Tc β€” 43 A
On-State Resistance RDS(on) max β€” 15.8 mOhm at VGS = 10 V
Power Dissipation (Pd) at Tc = 25 C β€” 71 W
Package / Case β€” TO-252AA (DPAK)
Technology β€” HEXFET (IR MOSFET)
Operating Temperature Range β€” -55 C to +175 C
Gate-Source Voltage (VGS) max β€” +/- 20 V
Number of Units in IC β€” 1
Lead-Free / RoHS β€” Yes (PBF suffix, lead-free)
Avalanche Rated β€” Yes (HEXFET family)

Datasheets & Resources

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