IRFZ48NSTRLPBF vs IRLR3636TRLPBF Comparison

Detailed side-by-side comparison of IRFZ48NSTRLPBF by Infineon and IRLR3636TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ48NSTRLPBF IRLR3636TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.74
FET Type N-Channel Power MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 55 V 60 V
Continuous Drain Current (ID) @ Tc=25C 64 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM rating]
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V
Total Gate Charge (Qg) 54 nC
Gate-to-Source Voltage (VGS) max ±20 V
Power Dissipation (Pd) @ Tc=25C 130 W
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W
Operating Junction Temperature -55C to +175C
Package D2PAK (TO-263) Surface Mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL)
Lead Finish Lead-free (PBF) matte tin
RoHS Status Compliant
Technology Family HEXFET advanced process technology
Technology IR HEXFET® (IR MOSFET™)
Continuous Drain Current (ID, TC=25°C) 50 A
Continuous Drain Current (ID, TC=100°C) 32 A [DATA_NEEDED: exact TC=100°C ID rating]
RDS(on) Max @ VGS=10V 6.8 mΩ
Gate-to-Source Voltage (VGS) Max ±20 V
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level)
Total Gate Charge (QG) 33 nC
Power Dissipation (PD, TC=25°C) 143 W
Operating Temperature Range -55 °C to +175 °C (TJ)
Lead-Free / RoHS Yes (PBF suffix)
Avalanche Rated Yes (per Infineon datasheet family)

Datasheets & Resources

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