IRFZ48NSTRLPBF vs IRLR3636TRPBF Comparison

Detailed side-by-side comparison of IRFZ48NSTRLPBF by Infineon and IRLR3636TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ48NSTRLPBF IRLR3636TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $2.38
FET Type N-Channel Power MOSFET N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) @ Tc=25C 64 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΞ© at VGS = 10 V β€”
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Total Gate Charge (Qg) 54 nC β€”
Gate-to-Source Voltage (VGS) max Β±20 V β€”
Power Dissipation (Pd) @ Tc=25C 130 W β€”
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W β€”
Operating Junction Temperature -55C to +175C β€”
Package D2PAK (TO-263) Surface Mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) β€”
Lead Finish Lead-free (PBF) matte tin β€”
RoHS Status Compliant Compliant
Technology Family HEXFET advanced process technology β€”
Drain-to-Source Voltage (V_DSS) β€” 60 V
Continuous Drain Current (I_D) at T_C = 25C β€” 50 A
Continuous Drain Current (I_D) at T_C = 100C β€” [DATA_NEEDED: I_D at 100C]
Pulsed Drain Current (I_DM) β€” [DATA_NEEDED: pulsed drain current]
Maximum R_DS(on) at V_GS = 10V β€” 6.8 mOhm
Typical R_DS(on) at V_GS = 10V β€” 5.4 mOhm
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) range]
Total Gate Charge (Q_G) β€” 33 nC
Maximum Power Dissition (P_D) at T_C = 25C β€” 143 W
Operating Temperature Range β€” -55C to +175C
Technology β€” IR HEXFET / IR MOSFET
Lead-Free β€” Yes (PBF suffix)

Datasheets & Resources

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