IRL40S212ARMA1 vs IPD320N20N3GATMA1 Comparison
Detailed side-by-side comparison of IRL40S212ARMA1 by Infineon and IPD320N20N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD320N20N3GATMA1 - 200V 34A OptiMOS3 N-Channel MOSFET | Infineon
IPD320N20N3GATMA1 β ActiveSpecification Comparison
| Parameter | IRL40S212ARMA1 | IPD320N20N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.31 | $1.34 |
| Manufacturer | Infineon Technologies | β |
| Part Family | StrongIRFETβ’ | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID, Tc) | 195 A | 34 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance (RDS(on)) | 1.9 mOhm max | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | β |
| Power Dissipation (PD, Tc) | 231 W | 136 W |
| Operating Temperature Range | [DATA_NEEDED: Tj max] | -55 C to +175 C (Tj) |
| Package | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | StrongIRFETβ’ (planar N-channel) | OptiMOS 3 |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | 1 (unlimited) | β |
| FET Type | β | N-Channel |
| On-Resistance RDS(on) max | β | 32 mOhm at VGS = 10 V |
| Gate Charge x RDS(on) FOM | β | Excellent (per datasheet) |
| Lead Plating | β | Pb-free |
| RoHS Compliance | β | Compliant |
| JEDEC Qualification | β | Qualified for target application |
| Channel Mode | β | Enhancement mode |
| Gate Threshold Level | β | Normal level (per datasheet title) |