IRLL024NTRPBF vs IRFR024NTRPBF Comparison
Detailed side-by-side comparison of IRLL024NTRPBF by Infineon and IRFR024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLL024NTRPBF | IRFR024NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.31 |
| Polarity | N-Channel | β |
| FET Type | MOSFET, Metal Oxide | β |
| Operating Mode | Enhancement Mode | β |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | β |
| Continuous Drain Current (ID) at Ta | 3.1 A | β |
| Pulsed Drain Current (IDM) | 4.4 A | 60 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | β |
| Total Gate Charge (Qg) | 10.4 nC | β |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | β |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | β |
| Maximum Operating Junction Temperature | 175 C | β |
| Package | SOT-223 (4-pin) | TO-252-3 (DPAK, SC-63), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Product Series | β | HEXFET Power MOSFET (5th generation) |
| Transistor Type | β | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) | β | 17 A (at TC = 25 C) |
| On-Resistance (RDS(on)) | β | 75 mOhm max (at VGS = 10 V) |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2.0 V to 4.0 V |
| Typical Gate Charge (Qg) | β | 13.3 nC |
| Total Power Dissipation (PD) | β | 45 W (at TC = 25 C) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Packaging | β | Tape and Reel (TR) |
| RoHS Compliance | β | Compliant (Pb-free / PbF terminations) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |