IRLML0040TRPBF vs IRF8736TRPBF Comparison

Detailed side-by-side comparison of IRLML0040TRPBF by Infineon and IRF8736TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLML0040TRPBF IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon

IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon

IRLML0040TRPBF βœ“ Active

Specification Comparison

Parameter IRLML0040TRPBF IRF8736TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.16 $0.27
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at TA=25C 3.6 A 18 A
Pulsed Drain Current (IDM) 14 A β€”
RDS(on) Max at VGS=10V 56 mOhm β€”
Gate-to-Source Voltage (VGS) Max [DATA_NEEDED: VGS maximum rating] β€”
Total Gate Charge (Qg) 2.6 nC β€”
Power Dissipation (PD) at TA=25C 1.3 W β€”
Operating Junction Temperature -55C to +150C β€”
Technology IR MOSFET / HEXFET StrongIRFET / HEXFET
Package Micro3 (SOT-23) SO-8 (8-SO, MS-012AA)
Mounting Type Surface Mount Surface Mount
Qualification Level Consumer (per JEDEC JSD47F) β€”
Moisture Sensitivity Level MSL1 (per IPC/JEDEC J-STD-020D) β€”
RoHS Compliance Compliant (no lead, no bromide, no halogen) β€”
Drain-Source Voltage (VDS) Max β€” 30 V
Power Dissipation (PD) Max at TA=25C β€” 2.5 W
Drain-Source On-Resistance (RDS(on)) Max β€” 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical β€” 17 nC
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Operating Temperature Range β€” -55C to +150C (junction)
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free, RoHS compliant)
MSL Level β€” 1 (per JEDEC J-STD-020)
Avalanche Rated β€” Yes (fully characterized avalanche voltage)
Configuration β€” Single
Packaging β€” Tape & Reel (TRPBF suffix)

Datasheets & Resources

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