IRLR3636TRLPBF vs IRFZ48NSTRLPBF Comparison

Detailed side-by-side comparison of IRLR3636TRLPBF by Infineon and IRFZ48NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR3636TRLPBF IRFZ48NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $1.18
FET Type N-Channel MOSFET N-Channel Power MOSFET
Technology IR HEXFET® (IR MOSFET™)
Drain-to-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID, TC=25°C) 50 A
Continuous Drain Current (ID, TC=100°C) 32 A [DATA_NEEDED: exact TC=100°C ID rating]
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM rating] [DATA_NEEDED: pulsed drain current]
RDS(on) Max @ VGS=10V 6.8 mΩ
Gate-to-Source Voltage (VGS) Max ±20 V
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level)
Total Gate Charge (QG) 33 nC
Power Dissipation (PD, TC=25°C) 143 W
Operating Temperature Range -55 °C to +175 °C (TJ)
Package TO-252AA (DPAK) D2PAK (TO-263) Surface Mount
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix)
Avalanche Rated Yes (per Infineon datasheet family)
Continuous Drain Current (ID) @ Tc=25C 64 A
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V
Total Gate Charge (Qg) 54 nC
Gate-to-Source Voltage (VGS) max ±20 V
Power Dissipation (Pd) @ Tc=25C 130 W
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W
Operating Junction Temperature -55C to +175C
Packaging Tape & Reel (13-inch reel, TRL)
Lead Finish Lead-free (PBF) matte tin
RoHS Status Compliant
Technology Family HEXFET advanced process technology

Datasheets & Resources

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