IRLR3636TRLPBF vs IRLR3636TRPBF Comparison

Detailed side-by-side comparison of IRLR3636TRLPBF by Infineon and IRLR3636TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR3636TRLPBF IRLR3636TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $2.38
FET Type N-Channel MOSFET N-Channel MOSFET, Metal Oxide
Technology IR HEXFET® (IR MOSFET™) IR HEXFET / IR MOSFET
Drain-to-Source Voltage (VDS) 60 V
Continuous Drain Current (ID, TC=25°C) 50 A
Continuous Drain Current (ID, TC=100°C) 32 A [DATA_NEEDED: exact TC=100°C ID rating]
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM rating]
RDS(on) Max @ VGS=10V 6.8 mΩ
Gate-to-Source Voltage (VGS) Max ±20 V
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level)
Total Gate Charge (QG) 33 nC
Power Dissipation (PD, TC=25°C) 143 W
Operating Temperature Range -55 °C to +175 °C (TJ) -55C to +175C
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix)
Avalanche Rated Yes (per Infineon datasheet family)
Drain-to-Source Voltage (V_DSS) 60 V
Continuous Drain Current (I_D) at T_C = 25C 50 A
Continuous Drain Current (I_D) at T_C = 100C [DATA_NEEDED: I_D at 100C]
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current]
Maximum R_DS(on) at V_GS = 10V 6.8 mOhm
Typical R_DS(on) at V_GS = 10V 5.4 mOhm
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) range]
Total Gate Charge (Q_G) 33 nC
Maximum Power Dissition (P_D) at T_C = 25C 143 W
RoHS Status Compliant
Lead-Free Yes (PBF suffix)

Datasheets & Resources

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