IRLR8726TRPBF vs BSC011N03LSIATMA1 Comparison

Detailed side-by-side comparison of IRLR8726TRPBF by Infineon and BSC011N03LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR8726TRPBF BSC011N03LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $1.32
Manufacturer Infineon Technologies Infineon Technologies
Part Number IRLR8726TRPBF
Technology StrongIRFET™ (HEXFET)
Channel Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 30 V
Continuous Drain Current (I_D) at T_C 86 A
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max 5.8 mΩ at V_GS = 10 V
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) min/max]
Gate Charge Q_g (typ.) 15 nC
Power Dissipation P_D 75 W at T_C
Operating Junction Temperature -55C to +175C -55 °C to +150 °C
Package TO-252AA (DPAK) PG-TDSON-8-7 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Number of Pins 3 (Gate, Drain, Source)
RoHS Status Compliant Compliant
Halogen-Free Yes
MSL Level 1 1 (per JEDEC J-STD-020)
Product Family OptiMOS™ 30 V
Drain-to-Source Voltage (VDS) 30 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA=25°C 37 A
Continuous Drain Current (ID) at TC=25°C 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value]
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical)
Power Dissipation at TA=25°C 2.5 W
Power Dissipation at TC=25°C 96 W

Datasheets & Resources

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