IRS2011STRPBF vs IR2011STRPBF Comparison

Detailed side-by-side comparison of IRS2011STRPBF by Infineon and IR2011STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF βœ“ Active

Specification Comparison

Parameter IRS2011STRPBF IR2011STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $0.71
Function Half-Bridge Gate Driver β€”
Configuration High-Side and Low-Side, Independent Channels High-Side and Low-Side (Independent)
Number of Outputs 2 β€”
Maximum Offset Voltage (High-Side) 200 V β€”
Output Current (Source / Sink) 1 A typical / 1 A typical β€”
Propagation Delay (ton/toff) 60 ns typical β€”
Delay Matching 20 ns maximum β€”
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.0 V CMOS or LSTTL
Bootstrap Supply Integrated bootstrap diode, floating channel β€”
Supply Voltage (VCC) 10 V to 20 V β€”
Negative Transient Tolerance Yes, dV/dt immune dV/dt immune
Package 8-SOIC (DSO-8) 8-SOIC (3.90 mm body width)
Operating Temperature -40 C to +125 C -40 C to +125 C
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (PBF suffix) β€”
Suitable Drivers MOSFETs and IGBTs β€”
Number of Drivers β€” 2 (Half-Bridge)
Peak Source Current β€” 1 A (typical)
Peak Sink Current β€” 1 A (typical)
Gate Drive Supply Voltage (VCC) β€” 10 V to 20 V
Floating Supply Voltage (VBS) β€” 10 V to 20 V (operational to +200 V)
Propagation Delay (typ.) β€” 80 ns
Turn-On Rise Time (typ.) β€” 35 ns
Turn-Off Fall Time (typ.) β€” 20 ns
Offset Voltage Rating β€” 200 V
Lead-Free / RoHS β€” Lead-Free, RoHS Compliant

Datasheets & Resources

Browse All Products Create BOM Request Quote