IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon
MPN: IRS2011STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.72 | $2.72 |
| 10 | $2.45 | $24.50 |
| 100 | $2.05 | $205.00 |
| 500 | $1.78 | $890.00 |
| 1,000 | $1.55 | $1,550.00 |
IRS2011STRPBF Overview
A half-bridge gate driver IC is a power management semiconductor that translates low-power PWM logic signals from a controller into the high-current, level-shifted drive required to switch the high-side and low-side power switches of a half-bridge or full-bridge stage. In the broader taxonomy it belongs to gate drivers -> MOSFET/IGBT drivers -> power management ICs -> integrated circuits. The IRS2011STRPBF integrates a bootstrap diode and level shifter on chip, allowing a single supply rail to drive both the high-side switch referenced to the switching node and the low-side switch referenced to ground.
Key features include 200 V maximum offset voltage on the high-side channel, 1 A typical source and sink drive current, 60 ns typical propagation delay, and 20 ns maximum delay matching between channels for tight dead-time control. The IRS2011STRPBF provides independent CMOS/LSTTL-compatible inputs with hysteresis, a single VCC supply, and built-in shoot-through protection logic that enforces minimum dead time. The device accepts inputs down to 3.3 V, allowing direct connection to modern microcontrollers and DSPs without level shifters.
Architecturally, the IRS2011STRPBF uses a high-voltage floating N-channel MOSFET level-shift driver for the high-side output and a ground-referenced push-pull output stage for the low-side. This monolithic approach minimises propagation delay asymmetry - critical for half-bridge switching where channel mismatch translates directly into dead-time error and shoot-through risk. The negative transient voltage tolerance protects against ringing caused by stray inductance when the high-side switch turns off.
Typical applications include motor drives, SMPS half-bridge and full-bridge converters, electronic ballasts for HID and fluorescent lighting, and induction heating inverters. For three-phase inverter stages, three IRS2011STRPBF devices drive the six IGBTs of a variable-frequency drive or solar inverter. The wide 200 V rating suits 120/230 V rectified bus designs.
When designing with the IRS2011STRPBF, pay particular attention to bootstrap capacitor selection - the capacitor must supply the high-side drive current during the high-side on-time and recharge through the internal bootstrap diode during the low-side on-time. Insufficient capacitance causes high-side UVLO and partial turn-on.
This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet.
Drop-in alternatives for IRS2011STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRS2011STRPBF (same form factor and footprint) β differing in Package, Logic Input Compatibility, Configuration, Number of Outputs, Packaging.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS2011SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2302STRPBF
β Drop-Inβ In Stock
$0.54 / Unit
View Datasheet βIR25606STRPBF
β Drop-Inβ In Stock
$1.05 / Unit
View Datasheet βFAN7382MX
β Drop-Inπ Reference alternative (not in catalog)
IRS2011STRPBF Maximum Ratings & Electrical Characteristics
| Function | Half-Bridge Gate Driver |
| Configuration | High-Side and Low-Side, Independent Channels |
| Number of Outputs | 2 |
| Maximum Offset Voltage (High-Side) | 200 V |
| Output Current (Source / Sink) | 1 A typical / 1 A typical |
| Propagation Delay (ton/toff) | 60 ns typical |
| Delay Matching | 20 ns maximum |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL |
| Bootstrap Supply | Integrated bootstrap diode, floating channel |
| Supply Voltage (VCC) | 10 V to 20 V |
| Negative Transient Tolerance | Yes, dV/dt immune |
| Package | 8-SOIC (DSO-8) |
| Operating Temperature | -40 C to +125 C |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (PBF suffix) |
| Suitable Drivers | MOSFETs and IGBTs |
IRS2011STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side supply voltage (10 V to 20 V) |
| Pin 2 | HIN β Logic input for high-side output (CMOS/LSTTL, active-high) |
| Pin 3 | LIN β Logic input for low-side output (CMOS/LSTTL, active-high) |
| Pin 4 | GND β Ground reference for logic and low-side output |
| Pin 5 | LO β Low-side gate drive output |
| Pin 6 | VS β High-side floating supply return (switching node) |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | VB β High-side floating supply (bootstrap) |
Typical Applications
IRS2011STRPBF is suitable for 6 applications: Motor Drives and Variable Frequency Drives, Switch Mode Power Supply Half-Bridge Converters, Electronic Ballasts for HID and Fluorescent Lighting, Induction Heating Inverters, Solar Micro-Inverters and Power Optimisers, Class D Audio Amplifiers.
Motor Drives and Variable Frequency Drives
The IRS2011STRPBF fits three-phase motor drive and single-phase VFD applications because it integrates high- and low-side drive channels with independent CMOS inputs and 200 V bus tolerance. In a 230 V AC rectified bus (up to ~325 VDC peak after PFC), three IRS2011STRPBF devices drive six IGBTs of a three-phase inverter stage up to several horsepower. The 1 A source and sink current drives discrete IGBT modules with gate charges up to ~100 nC. Per the Infineon datasheet, the 60 ns propagation delay and 20 ns channel-to-channel matching minimise dead-time error, reducing torque ripple in field-oriented control. The built-in bootstrap diode eliminates an external component for the high-side supply, simplifying PCB layout.
Recommended
Switch Mode Power Supply Half-Bridge Converters
The IRS2011STRPBF is widely used in half-bridge and full-bridge SMPS topologies including telecom rectifiers, server PSUs, and industrial DC-DC converters. Its 200 V rating covers the 120/230 V AC-rectified bus directly (after PFC, the bus typically reaches 380-400 VDC, requiring 600 V drivers - for those designs use IRS2302STRPBF instead). In sub-200 V bus applications such as 100 V telecom buses, the IRS2011STRPBF provides 1 A peak drive for primary-side switches. The 3.3 V-compatible logic inputs connect directly to digital controllers without level shifters, reducing BOM cost and PCB area.
Recommended
Electronic Ballasts for HID and Fluorescent Lighting
Electronic ballasts for high-intensity discharge lamps and fluorescent tubes use half-bridge resonant inverters operating at 30-100 kHz. The IRS2011STRPBF fits this role with its 200 V rating suited to rectified 120/230 V mains, 1 A drive for IGBT switches handling lamp inrush currents, and dV/dt immunity for noisy resonant tank transients. The integrated bootstrap diode simplifies the high-side drive supply for the upper switch referenced to the lamp-side switching node. Per the Infineon datasheet, the 20 ns channel-to-channel matching keeps the dead-time balanced, protecting against cross-conduction that would damage the IGBTs.
Recommended
Induction Heating Inverters
Induction heating cooktops and industrial heating inverters use resonant half-bridge or full-bridge topologies switching at 20-100 kHz with high dV/dt transitions on the switching node. The IRS2011STRPBF's dV/dt immunity and negative transient voltage tolerance per the Infineon datasheet protect the high-side channel from ringing caused by stray inductance during IGBT turn-off. The 1 A drive current supports IGBTs up to ~40 A continuous for domestic induction cooktops. The compact 8-SOIC package enables high-power-density PCB designs where thermal management is handled by copper pour rather than external heatsinks.
Recommended
Solar Micro-Inverters and Power Optimisers
Solar micro-inverters and module-level power optimisers require compact, high-efficiency half-bridge drivers for sub-200 V DC bus designs from single PV panels (typically 30-50 V open circuit) or small string arrays. The IRS2011STRPBF's 1 A drive and integrated bootstrap diode make it well suited for high-frequency (50-200 kHz) LLC and phase-shifted full-bridge converters in this voltage range. The 3.3 V logic compatibility enables direct connection to microcontrollers and digital signal controllers used in MPPT algorithms. Per Verified Web Data, the part is RoHS compliant (PBF suffix) meeting solar industry environmental requirements.
Recommended
Class D Audio Amplifiers
Class D audio amplifiers use complementary half-bridge output stages switching at 200 kHz to 1 MHz to achieve high efficiency. The IRS2011STRPBF is suitable for sub-200 V bus Class D amplifiers in automotive and home audio. Its 1 A source/sink current drives MOSFETs with gate charges up to 100 nC for amplifier outputs up to a few hundred watts. The 60 ns propagation delay and 20 ns matching per the Infineon datasheet minimise dead-time distortion, which directly affects total harmonic distortion in audio output. The integrated bootstrap supply simplifies the high-side drive for the upper MOSFET referenced to the switching audio output node.
Recommended
Recommended Products Summary
Engineering reference data for IRS2011STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2011SPBF | IRS2302STRPBF | IR25606STRPBF | FAN7382MX |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | 8-SOIC (DSO-8) | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOP - same |
| Maximum Offset Voltage | 200 V | 200 V | 600 V | 600 V | 600 V |
| Output Current (Source/Sink) | 1 A / 1 A typical | 1 A / 1 A | 290 mA / 600 mA | 200 mA / 350 mA | 650 mA / 650 mA |
| Logic Compatibility | 3.3 V CMOS / LSTTL | 3.3 V CMOS / LSTTL | 3.3 V CMOS / LSTTL | CMOS | CMOS |
| Supply Voltage | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- 1 A source/sink drive current - highest in SO-8 200 V class (vs FAN7382MX)
- Lower propagation delay for higher-frequency designs (vs FAN7382MX)
- Same-package upgrade path to 600 V bus designs (vs IRS2302STRPBF)
Design Notes
Bootstrap capacitor sizing is critical for IRS2011STRPBF operation. The bootstrap capacitor (Cbs) connected between VB and VS must supply the high-side quiescent current plus gate charge for the entire high-side on-time, then recharge through the internal bootstrap diode during the low-side on-time. A common starting point is Cbs = 10 * Qg where Qg is the MOSFET/IGBT total gate charge. For a 50 nC gate charge MOSFET at 50 kHz switching, Cbs of at least 0.47 uF is recommended; 1 uF X7R ceramic provides margin. Insufficient capacitance causes high-side UVLO and partial turn-on.
Place the VCC bypass capacitor (typically 0.1 uF ceramic in parallel with 10 uF electrolytic) within 5 mm of the VCC pin. Keep the high-side gate drive loop (HO, VS, and the upper MOSFET gate-source) area as small as possible to minimise parasitic inductance that causes gate ringing. Use a ground plane on the bottom layer directly under the driver and power switch returns. Avoid running low-level logic signals (HIN, LIN) parallel to the switching node (HS/VS) to prevent capacitive coupling that could falsely trigger the high-side channel.
At switching frequencies above 100 kHz with high gate charge loads, gate driver power dissipation becomes significant. Estimated: Pdriver = VCC * Qg * fsw. For VCC=15V, Qg=50 nC, fsw=200 kHz, Pdriver is approximately 0.15 W per channel. The 8-SOIC package has theta_JA around 150 C/W on a standard JEDEC 4-layer board. At 0.3 W total dissipation, junction temperature rises about 45 C above ambient, which is acceptable up to ~85 C ambient. Above 100 kHz with high Qg loads, consider copper pour under the exposed lead frame to reduce thermal resistance.
Do not operate the IRS2011STRPBF above 200 V offset - for higher buses up to 600 V, use IRS2302STRPBF or IR25606STRPBF instead. Do not exceed 20 V on VCC; above 20 V the internal bootstrap Zener clamps and may overheat. The IRS2011STRPBF is a non-inverting driver - both HIN and LIN are active-high; for inverting logic, swap HIN/LIN connection or use the IRS2011S variant with different logic polarity. Always add a reverse-bias Schottky diode across the gate-source of the driven MOSFET to prevent parasitic turn-on from Miller coupling.
Compliance Information
PBF suffix indicates lead-free and RoHS compliant per industry convention. Not AEC-Q100 qualified - not recommended for automotive safety-critical applications. Halogen-free status not stated in verified data; marked unknown.
