ISC008N06LM6ATMA1 vs ISC037N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC008N06LM6ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC008N06LM6ATMA1
ISC008N06LM6ATMA1 - 60V OptiMOS 6 N-Channel MOSFET | Infineon
ISC008N06LM6ATMA1 β ActiveInfineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC008N06LM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $3.62 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 | β |
| Polarity / Channel Type | N-Channel Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta | 44 A | β |
| Pulsed Drain Current (ID, pulse) at Tc | 378 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 221 W | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | β |
| Gate Threshold Voltage (VGS(th)) | Logic Level (1.0 V to 2.4 V typical) | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | -55C to +175C (junction) |
| Package Type | PG-TDSON-8 (Surface Mount) | β |
| Mounting Style | Surface Mount, Tape & Reel | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free Status | RoHS Compliant, Lead-Free | β |
| Halogen-Free | Yes | β |
| Technology | β | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | β | 120 V |
| Continuous Drain Current (Id) at Ta=25C | β | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | β | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | β | 3.7 mOhm |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 214 W |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg total] |
| Package | β | PG-TDSON-8 FL (SuperSO8) |
| Mounting Type | β | Surface Mount |
| RoHS Status | β | Compliant |
| Avalanche Energy Rated | β | Yes (single-pulse) |