ISC008N06LM6ATMA1 - 60V OptiMOS 6 N-Channel MOSFET | Infineon
MPN: ISC008N06LM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.96 | $960.00 |
| 3,000 | $0.82 | $2,460.00 |
ISC008N06LM6ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source terminals. OptiMOS 6 represents Infineon's 6th-generation trench MOSFET platform, which sits within the broader discrete semiconductor taxonomy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. N-channel enhancement-mode MOSFETs are the workhorses of switched-mode power conversion because their low on-resistance and fast switching enable high-efficiency buck, boost, and half-bridge topologies.
The ISC008N06LM6 family delivers greater than 37% lower RDS(on) and approximately 25% higher figure of merit compared to the prior OptiMOS 5 generation. Maximum power dissipation is 3 W at the standard PCB footprint (Ta) and 221 W with case-controlled cooling (Tc). The device is rated for operation from -55 C to +175 C junction temperature and is fully RoHS compliant with lead-free (Pb-free) terminal plating suitable for reflow soldering up to 260 C peak temperature.
Architecturally, the ISC008N06LM6 uses Infineon's advanced shielded-gate trench technology, which reduces both conduction losses (lower RDS(on)) and switching losses (lower Qg, Qgd) versus planar MOSFETs. The PG-TDSON-8 package with exposed drain pad provides an ultra-low thermal resistance path to PCB copper, enabling the 378 A pulsed current rating. Logic-level VGS(th) makes this part directly compatible with 3.3 V and 5 V microcontroller GPIO drives, eliminating the need for gate-driver bootstrap circuits in low-power applications.
Typical applications include OR-ing FETs in redundant power systems, hot-swap controllers in server backplanes, motor drive H-bridges for 12 V brushless DC fans and pumps, battery protection circuits in 12-48 V e-mobility packs, synchronous rectification in telecom DC-DC converters, and USB Power Delivery (PD) source sinks where high peak currents must be switched safely.
When designing with this MOSFET, ensure the gate-drive voltage exceeds the maximum VGS(th) rating under all temperature conditions and that the PCB layout keeps the source inductance below 5 nH to limit voltage overshoot during turn-off. Use Kelvin-source connection where available on the package for the cleanest switching performance.
This page synthesizes distributor pricing, same-family alternatives from Infineon's OptiMOS 6 portfolio, and practical design notes not consolidated in the manufacturer datasheet itself.
Drop-in alternatives for ISC008N06LM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC008N06LM6ATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Product Family, Technology, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC011N04NM7VATMA1
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View Datasheet →ISC015N06NM5ATMA1
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View Datasheet →ISC028N03LF2SATMA1
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View Datasheet →ISC037N12NM6ATMA1
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View Datasheet →ISC151N08NM6ATMA1
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View Datasheet →ISC008N06LM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 |
| Polarity / Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 44 A |
| Pulsed Drain Current (ID, pulse) at Tc | 378 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 221 W |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | Logic Level (1.0 V to 2.4 V typical) |
| Operating Temperature Range | -55 C to +175 C (Tj) |
| Package Type | PG-TDSON-8 (Surface Mount) |
| Mounting Style | Surface Mount, Tape & Reel |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free Status | RoHS Compliant, Lead-Free |
| Halogen-Free | Yes |
ISC008N06LM6ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (signal source pin) |
| Pin 2 | Source — Source connection (signal source pin) |
| Pin 3 | Source — Source connection (signal source pin) |
| Pin 4 | Gate — Gate drive input (logic-level VGS) |
| Pin 5 | Drain — Drain connection (top-side) |
| Pin 6 | Drain — Drain connection (top-side) |
| Pin 7 | Drain — Drain connection (top-side) |
| Pin 8 | Source — Source connection (signal source pin) |
| Pin EP | Drain (Exposed Pad) — Drain connection (bottom exposed pad for thermal and electrical connection) |
Safe Operating Area - ISC008N06LM6 (estimated envelope from datasheet limits)
Typical Applications
ISC008N06LM6ATMA1 is suitable for 7 applications: Server OR-ing and Redundant Power Supply, Battery Protection and Disconnect Switch, Brushless DC Motor Drive (H-Bridge), Synchronous Rectification in DC-DC Converters, USB Power Delivery (PD) Source Sink, Hot-Swap Controller Output Switch, Automotive 12 V Load Switching (Non-Safety).
Server OR-ing and Redundant Power Supply
The ISC008N06LM6ATMA1's 60 V VDS rating, 44 A continuous drain current, and sub-milliohm RDS(on) make it an excellent OR-ing FET for -48 V telecom and 12 V server redundant power architectures. When two power supplies are paralleled for redundancy, the MOSFET sits in series with each output and prevents backfeeding from one supply into another. The logic-level VGS(th) of 1.0 to 2.4 V enables direct gate drive from a hot-swap controller IC such as the LTC4215 or TPS2590 without a dedicated gate-driver stage. Compared to a Schottky diode, the MOSFET reduces forward drop from ~0.5 V to <10 mV, eliminating up to 20 W of dissipation per OR-ing leg at 40 A. The PG-TDSON-8 package with exposed drain pad achieves thermal resistance around 1 C/W on a 1 oz copper PCB, keeping Tj rise manageable even at sustained 30 A loads.
Recommended
Battery Protection and Disconnect Switch
For 12 V to 48 V battery packs in e-mobility, power tools, and UPS systems, the ISC008N06LM6ATMA1 serves as the primary low-side disconnect switch between the battery stack and the load. The 60 V VDS comfortably exceeds 48 V nominal battery voltage plus transient spikes during load-dump events, while the 378 A pulsed rating handles motor inrush currents. The PG-TDSON-8 footprint supports high-density pack designs where board space is at a premium. Designers should add a TVS such as SMAJ33A across drain-source to clamp inductive transients, and use a dedicated gate-driver like the TLD1211SJFUMA1 to achieve fast turn-off (under 1 microsecond) for short-circuit protection. The part's logic-level threshold simplifies interface to the battery management MCU running at 3.3 V.
Recommended
Brushless DC Motor Drive (H-Bridge)
In 12 V to 24 V brushless DC motor drive H-bridges, two ISC008N06LM6ATMA1 MOSFETs form each half-bridge leg for a total of six switches in three-phase configurations. The 60 V VDS provides ample margin over 24 V bus rails plus back-EMF transients, while the 44 A continuous rating handles motor currents up to 30 A continuous with 100% duty cycle. Logic-level VGS(th) allows direct PWM drive from 3.3 V MCUs like the PIC32MK series without bootstrap gate drivers in lower-voltage (<15 V) systems. The low Qg and Qgd of the OptiMOS 6 die reduce switching losses at 25 kHz PWM frequencies, improving overall drive efficiency by 2-3% versus older planar MOSFETs. The PG-TDSON-8 package's exposed drain pad simplifies PCB layout with all sources on the top side for high-side drive.
Recommended
Synchronous Rectification in DC-DC Converters
The ISC008N06LM6ATMA1 serves as the low-side synchronous rectifier FET in 12 V to 48 V buck and buck-boost converters, replacing Schottky diodes to gain 3-5% efficiency at high load currents. Its sub-milliohm RDS(on) at 10 V VGS minimizes conduction loss in the low-side loop, while the low Qrr (reverse recovery charge) reduces switching losses that dominate at 300-500 kHz switching frequencies. Designers should pair it with a dedicated high-side MOSFET such as the IPB60R280P7ATMA1 (600 V for PFC) or another 60 V N-channel for buck topologies, driven by a half-bridge controller like the 2EDL8034G4CXTMA1 or IRS2304SPBF. The PG-TDSON-8 package's source-down exposed pad enables direct cooling to the bottom copper layer.
Recommended
USB Power Delivery (PD) Source Sink
In USB PD 3.1 source and sink applications operating at 20 V / 28 V / 36 V / 48 V fixed PDOs, the ISC008N06LM6ATMA1 acts as the VBUS protection switch on the source side and the input protection FET on the sink side. Its 60 V VDS comfortably covers the highest 48 V EPR PDO plus transient over-voltages during cable hot-plug events, while the 44 A continuous current supports 240 W EPR (48 V at 5 A) power delivery. The logic-level VGS(th) simplifies interface to the PD controller IC, and the PG-TDSON-8 package fits within the tight footprint constraints of Type-C connector PCBs. Add an Rdson-based current-sense resistor or Rds(on) sensing via the PD controller for OCP compliance per USB PD 3.1 specification.
Recommended
Hot-Swap Controller Output Switch
In -48 V telecom and 24 V industrial distributed power systems, the ISC008N06LM6ATMA1 sits at the output of the hot-swap controller to provide inrush current limiting and circuit-breaker protection. The 60 V VDS rating exceeds -48 V plus 20% tolerance, while the 44 A continuous rating covers most 1U blade-server and PoE++ applications. The low RDS(on) of the OptiMOS 6 die reduces steady-state voltage drop to under 30 mV at 30 A, minimizing power loss and improving overall system efficiency. Designers should configure the gate rise time via an external RC network to limit inrush dV/dt, and use the hot-swap controller's current-sense amplifier output to drive the MOSFET gate for closed-loop current limiting during board insertion.
Recommended
Automotive 12 V Load Switching (Non-Safety)
While the standard ISC008N06LM6ATMA1 is industrial-grade (not AEC-Q101), it is commonly used in non-safety automotive subsystems such as infotainment power rails, interior lighting, USB charging ports, and seat-control modules operating from 12 V battery. The 60 V VDS easily handles 12 V load-dump transients up to 35 V, and the 44 A rating supports high-current actuators like seat-adjustment motors. For safety-critical systems such as airbag or ABS, designers should select an AEC-Q101-qualified part such as the IAUC prefix series. The PG-TDSON-8 package meets automotive vibration and temperature cycling requirements when properly soldered to a 1 oz or heavier copper PCB pad.
Recommended
Recommended Products Summary
Engineering reference data for ISC008N06LM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC011N04NM7VATMA1 | ISC015N06NM5ATMA1 | ISC028N03LF2SATMA1 | ISC037N12NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 | PG-TDSON-8 (same) | PG-TDSON-8 (same) | PG-TDSON-8 (same) | PG-TDSON-8 (same) | PG-TDSON-8 (same) |
| VDS max | 60 V | 40 V | 60 V | 30 V | 120 V | 80 V |
| Technology Generation | OptiMOS 6 | OptiMOS 7 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 6 |
| VGS(th) Class | Logic Level | Logic Level | Logic Level | Logic Level | Logic Level | Logic Level |
| RoHS / Lead-Free | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- OptiMOS 6 die with lowest FOM in 60 V class (vs ISC015N06NM5ATMA1)
- Higher voltage headroom for 48 V bus applications (vs ISC011N04NM7VATMA1)
- Logic-level VGS(th) eliminates gate-driver requirement (vs Standard-level (non-logic) 60 V MOSFETs)
Design Notes
Estimated: at 25 C ambient and continuous 30 A drain current with VIN=24 V, VOUT=12 V (synchronous rectifier duty), conduction loss is roughly I^2 * RDS(on) = 30^2 * 0.001 = 0.9 W. With PG-TDSON-8 thermal resistance around 50 C/W to ambient, Tj rise is ~45 C, leaving ~125 C margin to the 175 C max junction. For continuous operation above 25 A, add at least 1 square inch of 2 oz copper drain pad and consider a small top-side heat spreader. The exposed drain pad MUST be soldered to the PCB thermal land for the rated 221 W Tc dissipation.
Keep the gate-drive loop area (gate pin -> gate resistor -> source return) below 0.5 cm^2 to minimize parasitic inductance and ringing. Place the gate resistor (typically 10-33 ohm) within 5 mm of the gate pin. For hard-switched half-bridge layouts, use a Kelvin-source connection where the source-sense pin ties directly to the gate-driver return, bypassing the main source inductance. Place input decoupling within 10 mm of the drain pads for high-current applications.
Do not exceed VGS = +/-20 V - static discharge can permanently damage the thin gate oxide. Use a gate-source resistor (10 kohm) to keep the gate below VGS(th) during power-up when the gate driver is in high-impedance. For paralleling multiple ISC008N06LM6 devices, add individual gate-source resistors (10-100 ohm) to suppress parasitic oscillation between the paralleled dies. The exposed drain pad carries the main thermal and electrical load - insufficient solder joint area is the most common cause of field failures.
The PG-TDSON-8 land pattern recommended by Infineon uses 1.0 mm x 0.8 mm pads for the source and drain pins with a 4.0 mm x 4.0 mm thermal pad for the exposed drain. Use NSMD (Non-Solder Mask Defined) pads on the source/drain for better solder joint reliability. Apply 1.5 oz or 2 oz copper on the top layer under the thermal pad to achieve the rated thermal performance. Avoid placing via-in-pad on the thermal pad unless filled and plated - voids can cause thermal hot spots.
Compliance Information
RoHS compliant per Infineon product page. Industrial-grade (not AEC-Q101 qualified) - for automotive safety-critical applications select IAUC prefix series. MSL-1 moisture sensitivity per JEDEC J-STD-020.
