ISC080N10NM6ATMA1 vs IAUCN04S6N009TATMA1 Comparison
Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and IAUCN04S6N009TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveInfineon
IAUCN04S6N009TATMA1
IAUCN04S6N009TATMA1 - 40V 0.9mΞ© OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 β ActiveSpecification Comparison
| Parameter | ISC080N10NM6ATMA1 | IAUCN04S6N009TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $1.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 6 100V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 100 V | β |
| Continuous Drain Current (ID) at Ta | 13 A | β |
| Continuous Drain Current (ID) at Tc | 75 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 Β΅A | β |
| Package | PG-TDSON-8 FL (TDSON EP) | PG-LHDSO-10-2 (SSO10T) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max, per datasheet) | β |
| MSL Level | 1 (per JEDEC J-STD-020, per datasheet) | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | β |
| Part Family | β | OptiMOS 6 40 V |
| Part Number | β | IAUCN04S6N009T |
| Ordering Code (MPN) | β | IAUCN04S6N009TATMA1 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, at Tj) | β | 330 A |
| Power Dissipation (PD, at Tc) | β | 178 W |
| On-Resistance RDS(on) max | β | 0.9 mΞ© |
| Technology | β | OptiMOS 6 trench MOSFET |
| Automotive Qualification | β | AEC-Q101 |
| Lead-Free / RoHS | β | Yes / Compliant |
| Gate Threshold VGS(th) typ | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: total gate charge] |