2EDN8533RXTMA1 - Dual 5A Low-Side Gate Driver IC | Infineon
MPN: 2EDN8533RXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.13 | $1.13 |
| 10 | $1.05 | $10.50 |
| 100 | $0.95 | $95.00 |
| 500 | $0.85 | $425.00 |
| 1,000 | $0.78 | $780.00 |
2EDN8533RXTMA1 Overview
A low-side gate driver IC is an integrated circuit that sits between a low-voltage logic-level control signal (typically 3.3 V PWM from a microcontroller or PWM controller) and the gate of a power switching transistor (MOSFET, IGBT, or GaN HEMT). Its role is to translate the weak control signal into a strong, high-peak-current drive that can rapidly charge and discharge the transistor's gate capacitance, minimising switching losses and dead-time. In the broader power-management hierarchy, a gate driver sits between a PWM controller IC (e.g., a buck or LLC controller) and the power stage, and is itself a category of power MOSFET driver under PMIC functions.
Key features of the 2EDN8533RXTMA1 include 5 A peak source/sink output current per channel, low output resistance for fast switching edges, excellent timing accuracy with tightly matched propagation delays between channels, and TTL-compatible inputs that can withstand absolute maximum voltages from -12 V to +22 V. The device operates over a wide VCC range and includes under-voltage lockout (UVLO) protection on the supply rail to prevent the driven transistor from operating in its linear region during low-VCC conditions, which would otherwise cause dangerous shoot-through or excessive dissipation.
The 2EDN8533RXTMA1 uses a matched-die dual-channel architecture in a small 8-pin PG-TSSOP package with an exposed pad that provides both a low-impedance ground return and a thermal path for sustained switching current. Each channel can drive MOSFETs in several-hundred-kHz to low-MHz switching applications, making the IC suitable for high-density DC-DC converters and synchronous rectification stages. The wide input-voltage tolerance simplifies interface to 3.3 V or 5 V logic without external level shifters or protection Zener diodes.
Typical applications include DC-DC buck and boost converter power stages, synchronous rectifier drivers, half-bridge and full-bridge driver stages when paired with a high-side bootstrap driver, motor drive low-side gate stages, Class-D audio amplifier output stages, and telecom/server point-of-load converters. The PG-TSSOP-8 footprint keeps the driver close to the power transistors, minimising parasitic loop inductance that would otherwise slow switching edges and cause ringing or voltage overshoot.
When designing with the 2EDN8533RXTMA1, place input and bypass capacitors as close to VCC and GND pins as possible and connect the exposed pad to a solid ground plane to minimise parasitic inductance. The wide input tolerance allows direct connection to 3.3 V or 5 V logic, but designers should still respect absolute maximum ratings. For half-bridge work, the device is typically paired with a high-side bootstrap driver such as Infineon's 2ED2106S06J or the IR2110 family to complete a complete bridge drive solution.
This page synthesises distributor pricing, drop-in alternative listings, and practical PCB layout notes that go beyond the manufacturer datasheet - giving a working engineer one consolidated source for sourcing, second-source qualification, and design-in guidance.
Drop-in alternatives for 2EDN8533RXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDN8533RXTMA1 (same form factor and footprint) — differing in Package, Number of Outputs, Driver Configuration, Driver Type, Number of Channels.
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View Datasheet →2EDN8533RXTMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Dual-channel low-side gate driver IC |
| Driver Configuration | Low-side, dual independent channels |
| Peak Source/Sink Current | 5 A per channel |
| Number of Channels | 2 |
| Input Compatibility | LV-TTL |
| Input Voltage Tolerance (absolute max) | -12 V to +22 V |
| Output Resistance | Low (per datasheet; see SG figure) |
| Propagation Delay | Matched between channels (excellent timing accuracy) |
| Under-Voltage Lockout (UVLO) | Yes (VCC UVLO) |
| Package | PG-TSSOP-8 (exposed pad) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (per Infineon product page) |
2EDN8533RXTMA1 Pin Configuration
| Pin 1 | IN1 — Logic input for channel 1 (LV-TTL compatible) |
| Pin 2 | IN2 — Logic input for channel 2 (LV-TTL compatible) |
| Pin 3 | GND — Ground reference |
| Pin 4 | VCC — Supply voltage for driver output stages |
| Pin 5 | OUT2 — Gate drive output for channel 2 |
| Pin 6 | OUT1 — Gate drive output for channel 1 |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin EP | Exposed Pad — Thermal pad - must be soldered to PCB ground plane for thermal dissipation and low-impedance ground return |
Typical Applications
2EDN8533RXTMA1 is suitable for 6 applications: DC-DC Synchronous Buck Converter Power Stage, Half-Bridge Motor Drive Stage, Class-D Audio Amplifier Output Stage, Telecom Server Point-of-Load Converter, Solar Microinverter Power Stage, Industrial SMPS Primary-Side Drive.
DC-DC Synchronous Buck Converter Power Stage
The 2EDN8533RXTMA1 is well suited as the low-side synchronous rectifier driver in point-of-load DC-DC buck converters. Its 5 A peak source/sink current handles MOSFETs up to several hundred watts, the dual channels independently drive the sync-FET and a small auxiliary FET, and the tight propagation-delay matching minimises dead-time, maximising efficiency. The PG-TSSOP-8 exposed pad keeps the driver physically close to the power FETs, minimising gate-loop inductance that would otherwise slow switching edges.
Recommended
Half-Bridge Motor Drive Stage
In low-voltage brushless DC (BLDC) motor drives, the 2EDN8533RXTMA1 drives both low-side FETs of a three-phase inverter while a high-side bootstrap driver handles the high-side FETs. The two channels provide independently controlled timing for two of the three phases in some topologies, or drive a half-bridge leg. The wide -12 V to +22 V input tolerance directly accepts 3.3 V or 5 V MCU PWM outputs without level shifters. The exposed thermal pad sustains continuous switching current at typical 20-100 kHz PWM frequencies.
Recommended
Class-D Audio Amplifier Output Stage
The 2EDN8533RXTMA1 drives the output MOSFETs in half-bridge Class-D audio amplifier topologies where total harmonic distortion depends critically on switching-edge symmetry between the two output legs. Its matched propagation delay between the two channels ensures that the high-side and low-side FETs have identical dead-time, minimising crossover distortion that would otherwise degrade audio quality. The 5 A peak drive strength supports output stages from 50 W to several hundred watts per channel in home theatre and professional audio.
Recommended
Telecom Server Point-of-Load Converter
The 2EDN8533RXTMA1 is widely used in 48 V to point-of-load buck converters that step down to 1 V or 0.8 V core voltages for server CPUs, GPUs, and ASICs in datacenter equipment. Its small PG-TSSOP-8 footprint allows dense layout next to the power stage, and its 5 A drive strength supports high-current FETs needed for 30 A to 100 A rails. The two channels can drive both the control FET and sync FET in a single-driver-per-phase configuration, reducing component count and PCB area.
Recommended
Solar Microinverter Power Stage
The 2EDN8533RXTMA1 drives low-side IGBTs or MOSFETs in photovoltaic microinverters that convert single-panel DC outputs to AC grid power. The two channels can drive both the low-side switch of a full-bridge leg and an auxiliary synchronous rectification FET. The exposed thermal pad handles continuous switching duty in outdoor enclosures. The wide input voltage tolerance provides robust interface to gate-driver optocouplers used for high-voltage isolation between the microcontroller and the power stage.
Recommended
Industrial SMPS Primary-Side Drive
The 2EDN8533RXTMA1 functions as the primary-side low-side driver in industrial switched-mode power supplies (SMPS) such as those in PLCs, factory automation controllers, and welding equipment. The dual channels can drive a primary-side half-bridge leg or two independent low-side MOSFETs in a two-switch forward converter. Its 5 A peak current supports MOSFETs at switching frequencies of 100-500 kHz, and the exposed pad provides the thermal margin for continuous industrial operation at elevated ambient temperatures.
Recommended
Recommended Products Summary
Engineering reference data for 2EDN8533RXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDN7434RXTMA1 | 1EDN7136UXTSA1 | 2EDL8034G4CXTMA1 | 2EDL5023U2DXTMA1 | 2EDL6014ACG2DXTMA1 | 2EP130RXTMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSSOP-8 | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same |
| Number of Channels | 2 | 2 | 1 | 2 | 2 | 2 | 2 |
| Driver Configuration | Low-side | Low-side | Low-side | Low-side | Low-side | Low-side | Low-side |
| Input Compatibility | LV-TTL | LV-TTL | LV-TTL | LV-TTL | LV-TTL | LV-TTL | LV-TTL |
| UVLO Protection | Yes (VCC) | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Wide input voltage tolerance eliminates external protection components (vs TI UCC27524)
- Tightly matched propagation delay between channels (vs Discrete dual-driver using two single-channel ICs)
- Dual 5 A drive in single PG-TSSOP-8 package (vs TI UCC27517 (single-channel, 5-pin SOT-23))
Design Notes
Place the VCC bypass capacitor (1 uF ceramic minimum) within 3 mm of the VCC pin and use a low-impedance ground return via the exposed pad. The exposed pad (EP) MUST be soldered to a PCB ground copper pour of at least 25 mm^2 for proper thermal dissipation. Minimize the gate-drive loop by placing the 2EDN8533RXTMA1 within 5-10 mm of the driven MOSFET's gate pin.
Do not exceed the absolute maximum input voltage of -12 V (reverse) or +22 V (forward) on IN1/IN2 pins. Even brief transients beyond these limits will damage the device. The VCC supply should be decoupled with both a 1 uF bulk ceramic and a 100 nF high-frequency ceramic in parallel. The PG-TSSOP-8 exposed pad must not be left floating - it serves both as thermal path and primary ground reference.
For half-bridge applications, pair the 2EDN8533RXTMA1 with a high-side bootstrap driver (e.g., Infineon 2ED2106S06J). The low-side channels drive the low-side FETs; the bootstrap driver handles high-side FETs. The wide input tolerance (-12 V to +22 V) eliminates the need for external Zener clamps or level shifters on the input pins, simplifying the BOM. Always check VCC UVLO thresholds against your supply ramp profile to avoid turn-on at low VCC where Rds(on) is high.
Estimated: at 5 A peak drive into a MOSFET with Qg = 50 nC at 500 kHz switching, the average gate-drive power dissipation is P = Qg * Vdrive * fsw = 50e-9 * 10 V * 500e3 = 0.25 W per channel (1 W total for both channels). The PG-TSSOP-8 with adequate ground-copper thermal pad achieves approximately theta_JA around 50-60 C/W, giving a junction temperature rise of 25-30 C above ambient at this dissipation level. Forced airflow is not typically required at this power level.
Compliance Information
RoHS and lead-free compliance per Infineon product page. Halogen-free status not explicitly stated in provided data. For automotive AEC-Q100 qualified variants, consult Infineon's EiceDRIVER 1ED family.
