FDD8896-F085 - 30V 94A N-Channel PowerTrench MOSFET | onsemi
MPN: FDD8896-F085 β End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.82 | $0.82 |
| 10 | $0.74 | $7.40 |
| 100 | $0.61 | $61.00 |
| 500 | $0.48 | $240.00 |
| 1,000 | $0.39 | $390.00 |
| 3,000 | $0.32 | $960.00 |
FDD8896-F085 Overview
What is a PowerTrench MOSFET? A PowerTrench MOSFET is an N-channel power MOSFET built on a proprietary trench-gate process that creates a vertical channel under each cell, dramatically lowering on-state resistance per unit silicon area versus older planar DMOS structures. It belongs to the broader MOSFET hierarchy (MOSFET -> power MOSFET -> discrete semiconductor), and in modern SMPS topologies it acts as the synchronous-rectifier or main switch on the low-voltage side. The combination of low Rds(on), low Qg, and high current density makes it ideal for compact point-of-load and POL regulators.
Key features of the FDD8896-F085 include 30 V Vdss, 5.7 mOhm Rds(on) at Vgs = 10 V, 94 A continuous drain current at 25 C case temperature, 80 W maximum power dissipation at Tc = 25 C, and an avalanche-rated body diode. The device is also characterized for low gate charge and fast switching, which enables high-frequency operation and reduced driver losses. It is qualified to AEC-Q101 for automotive reliability, and is available in a Halogen-free, lead-free DPAK surface-mount package.
Typical applications include synchronous rectification in DC/DC converters, low-side switching in buck regulators, motor control and battery protection, hot-swap and OR-ing switches, and primary-side switching in isolated POL modules. The 30 V drain-source rating gives comfortable headroom for 12 V bus rails and 19 V adapter-fed systems, while the 5.7 mOhm on-resistance keeps conduction loss low at high currents.
When designing with this part, calculate conduction loss as P = I_d^2 x Rds(on) and ensure that the resulting junction temperature stays below 150 C under worst-case ambient and cooling conditions. A small gate-drive resistor (typically 4.7 to 10 ohm) is recommended to control ringing and limit dV/dt-induced turn-on. For thermal reliability, mount the DPAK tab onto at least 1 sq inch of copper.
This page synthesizes distributor pricing, AEC-Q101 automotive qualification details, drop-in TO-252 alternatives, and practical PCB-layout guidance that is not consolidated in the manufacturer datasheet alone. Engineers searching for a 30 V synchronous-rectifier MOSFET in DPAK will find the parametrics, cross-reference list, and SOA guidance needed for design-in and second-source decisions.
Drop-in alternatives for FDD8896-F085 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with FDD8896-F085 (same form factor and footprint) β differing in Manufacturer, Package, Pin Count, Technology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
NTMFS5C430NL
β Drop-Inπ Reference alternative (not in catalog)
NVMFS5C430NL
β Drop-Inπ Reference alternative (not in catalog)
FDD8896
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βFDU8896
β Drop-Inπ Reference alternative (not in catalog)
IRFR3711ZTRPBF
β Drop-Inπ Reference alternative (not in catalog)
AON7403
β Drop-Inπ Reference alternative (not in catalog)
FDD8896-F085 Maximum Ratings & Electrical Characteristics
| Manufacturer | onsemi (Fairchild Semiconductor) |
| FET Type | N-Channel MOSFET |
| Technology | PowerTrench (Trench-Gate) |
| Drain-Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (Id) at Tc=25C | 94 A |
| Continuous Drain Current (Id) at Ta=25C | 17 A |
| Rds(on) Max at Vgs=10V | 5.7 mOhm |
| Maximum Power Dissipation (Pd) at Tc=25C | 80 W |
| Gate-Source Voltage (Vgs) Max | 20 V |
| Gate Threshold Voltage (Vgs(th)) Typ | 2.0 V |
| Operating Temperature Range | -55C to +150C (Tj) |
| Package | TO-252 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) |
| Automotive Qualification | AEC-Q101 |
| RoHS / Halogen-Free Status | Compliant / Halogen-Free |
| Lead-Free | Yes |
| MSL Level | 1 |
FDD8896-F085 Pin Configuration
| Pin 1 | Gate β MOSFET gate drive input |
| Pin 2 | Source β MOSFET source connection (internally tied to pin 3 and tab) |
| Pin 3 | Source β MOSFET source connection (internally tied to pin 2 and tab) |
| Pin TAB | Drain (Tab) β MOSFET drain connection through metal tab; thermal pad for heatsinking |
Safe Operating Area - FDD8896-F085
Typical Applications
FDD8896-F085 is suitable for 6 applications: Synchronous Rectifier in DC/DC Converters, Automotive 12V Load Switch and Battery Protection, Motor Drive and H-Bridge Switching, Hot-Swap and OR-ing Switch, Point-of-Load (POL) Regulator Primary Switch, Solar Charge Controller and Renewable Power Switching.
Synchronous Rectifier in DC/DC Converters
The FDD8896-F085 is purpose-built by onsemi as the low-side synchronous rectifier in 12 V-input buck converters. Its 5.7 mOhm Rds(on) at Vgs=10 V and 30 V Vdss rating cover 12 V rails with ample margin for ringing, while the 94 A continuous rating handles >1000 W converter stages. Low gate charge and fast switching enable 300 kHz to 1 MHz operation, shrinking magnetics. Versus a Schottky rectifier the FDD8896 cuts rectification loss by 60-80 percent, improving overall efficiency by 2-4 percent in heavy load.
Recommended
Automotive 12V Load Switch and Battery Protection
AEC-Q101 qualification makes the FDD8896-F085 a strong fit for 12 V automotive load switches and reverse-battery protection FETs. Its 30 V Vdss tolerates load-dump transients up to 35 V clamped, while 5.7 mOhm Rds(on) keeps voltage drop below 50 mV at 10 A, preserving headroom for downstream ECUs. The DPAK package survives under-hood thermal stress, and the 94 A rating supports engine-starter interconnects and high-current body modules without paralleling devices.
Recommended
Motor Drive and H-Bridge Switching
For brushed-DC motor drive and H-bridge low-side positions, the FDD8896-F085 delivers 94 A pulsed current at 25 C case to drive windshield-wiper motors, seat adjusters, and cooling fans. Its low Rds(on) keeps I^2R heating modest, while 80 W power dissipation handles start-up surges up to 300 A for tens of milliseconds. The -55 C to +150 C Tj range survives under-hood cold-cranking (-40 C) and high-ambient thermal stress without derating outside the SOA envelope.
Recommended
Hot-Swap and OR-ing Switch
In redundant 12 V or 24 V power systems, the FDD8896-F085 serves as the OR-ing FET or hot-swap element. Its avalanche-rated body diode absorbs transient back-feed when parallel supplies parallel, while the 5.7 mOhm on-resistance limits steady-state loss to less than 0.5 W at 5 A. The 30 V Vdss handles brief 24 V bus transients during load dump, and the DPAK footprint allows direct PCB swap with Infineon and Vishay second sources.
Recommended
Point-of-Load (POL) Regulator Primary Switch
For 19 V adapter-fed POL modules stepping down to 5 V, 3.3 V, and 1.0 V core rails, the FDD8896-F085 functions as the main primary-side MOSFET. Its 30 V Vdss supports 19 V nominal plus 10 percent tolerance and ringing margin, and the 5.7 mOhm Rds(on) at Vgs=10 V minimizes conduction loss in continuous conduction mode. The device's fast switching edges enable 500 kHz operation, shrinking output filter inductors below 10 mm^2 in laptop and SSD applications.
Recommended
Solar Charge Controller and Renewable Power Switching
In low-voltage solar charge controllers and battery management systems, the FDD8896-F085 acts as the low-side disconnect FET or PWM switching element. Its 30 V Vdss handles up to 24 V panel open-circuit voltages with derating margin, and the 5.7 mOhm on-resistance keeps conduction loss under 1 W at 10 A continuous charge current. The AEC-Q101 qualification extends reliability to off-grid solar installations in harsh environments with wide temperature swings.
Recommended
Recommended Products Summary
Engineering reference data for FDD8896-F085 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | NTMFS5C430NL | NVMFS5C430NL | FDD8896 | FDU8896 | IRFR3711ZTRPBF | AON7403 |
|---|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | onsemi | Infineon | Alpha & Omega Semiconductor |
| Package | TO-252 (DPAK) | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-251 (IPAK) - equivalent through-hole | TO-252 (DPAK) - same | TO-252 (DPAK) - same |
| Drain-Source Voltage (Vdss) | 30 V | 40 V | 40 V | 30 V | 30 V | 20 V | 30 V |
| Continuous Drain Current (Id) at Tc=25C | 94 A | 200 A | 200 A | 94 A | 94 A | 93 A | 50 A |
| Rds(on) Max at Vgs=10V | 5.7 mOhm | 2.6 mOhm | 2.6 mOhm | 5.7 mOhm | 5.7 mOhm | 5.7 mOhm | 5.5 mOhm |
| Maximum Power Dissipation (Pd) | 80 W | 200 W | 200 W | 80 W | 80 W | 79 W | 50 W |
| Automotive Qualification (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Not qualified | Yes |
| Lifecycle Status | Obsolete | Active | Active | Obsolete | Obsolete | Active | Active |
| Technology | PowerTrench (Trench-Gate) | Trench-Gate | Trench-Gate | PowerTrench | PowerTrench | HEXFET (Trench) | AlphaMOS (Trench) |
Key Differentiators
- Pin-compatible higher-voltage upgrade path (vs NTMFS5C430NL)
- AEC-Q101 automotive qualification (vs IRFR3711ZTRPBF)
- Lower on-resistance than older-generation planar parts (vs AON7403)
Design Notes
Estimated: at Id = 50 A continuous and Rds(on) = 5.7 mOhm, conduction loss is P = I^2 x R = 50^2 x 0.0057 = 14.25 W. With the DPAK thermal resistance of approximately 1.5 C/W junction-to-case on 1 sq inch of FR4 copper, junction-to-ambient theta_JA is around 50 C/W, yielding a Tj rise of 14.25 x 50 = 712 C above ambient, which exceeds the 150 C Tj(max) limit. Derate to 25 A continuous or add a forced-air heatsink or 4+ square inches of copper pour.
Mount the DPAK tab onto at least 1 square inch (645 mm^2) of copper pour on the top layer to achieve the rated 80 W power dissipation. Use thermal vias (8-12 vias of 0.3 mm drill) connecting the tab pad to inner copper planes to spread heat. Keep gate and source traces short and wide (>= 0.5 mm) to minimize gate-loop inductance and prevent dv/dt-induced turn-on.
Do not exceed 20 V on the gate (Vgs max); use a 12 V gate-drive Zener clamp and 4.7 to 10 ohm gate resistor to control ringing. In synchronous-rectifier position, add 100 ns of dead-time to prevent shoot-through. The avalanche-rated body diode handles 30 V transients, but sustained operation above 30 V Vdss will destroy the device - place a TVS clamp on the drain for inductive loads.
Compliance Information
AEC-Q101 (not Q100) automotive qualification per onsemi datasheet. Halogen-free and lead-free per onsemi product page. RoHS and REACH compliance confirmed by onsemi material declaration.
