Infineon

FF800R12KF4 - 1200V 800A Dual IGBT Module | Infineon

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1200 V Vdss 800 A Id High-power IGBT module, isolated baseplate Package
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Price updated: 2026-08-29
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Drop-in alternatives for FF800R12KF4 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

FF800R12KF6C_B2

βœ… Drop-In
πŸ“¦ High-power IGBT module
newer KF6C generation, same 1200V 800A dual configuration

πŸ“‹ Reference alternative (not in catalog)

FF800R16KF6-B2

βœ… Drop-In
πŸ“¦ High-power IGBT module
1600V class vs 1200V, same 800A dual configuration

πŸ“‹ Reference alternative (not in catalog)

FF800R16KF6

βœ… Drop-In
πŸ“¦ High-power IGBT module
1600V class variant of the 800A dual family

πŸ“‹ Reference alternative (not in catalog)

FF800R17KE3

βœ… Drop-In
πŸ“¦ High-power IGBT module
1700V class (E3 generation) vs 1200V, 800A

πŸ“‹ Reference alternative (not in catalog)

FF1400R17T2P8

⚑ Same Package
Infineon
πŸ“¦ High-power IGBT module
Half-Bridge Β· 1700 V Β· 1400 A Β· 2800 A Β· TRENCHSTOP IGBT8 / Emitter Controlled 8 (EC8) diode Β· AG-XHP2K17 (XHP 2) Β· 175 C Β· NTC thermistor

βœ“ In Stock

$870 / Unit

View Datasheet β†’

FF800R12KF4 Maximum Ratings & Electrical Characteristics

Collector-Emitter Voltage (VCES) 1200 V
Continuous Collector Current (IC) 800 A
Configuration Dual switch (half-bridge) with built-in diodes
Maximum Power Dissipation 5000 W
Maximum Junction Temperature 150 C
Technology Trench-gate IGBT
Diode Type Fast-recovery anti-parallel freewheeling diodes
Mounting Type Chassis mount (non surface-mount), terminals upper position
Package High-power IGBT module, isolated baseplate
Parallel Operation Supported
Gate Drive Voltage +15 V / -15 V recommended

FF800R12KF4 high-power igbt module, isolated baseplate Pin Configuration Guide

Complete pinout information for FF800R12KF4 (high-power igbt module, isolated baseplate package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.

high-power igbt module, isolated baseplate package pinout diagram for FF800R12KF4

No detailed pinout data available for FF800R12KF4.

Refer to the datasheet for full pin configuration.

Safe Operating Area

DC Continuous Operation

Typical Applications

FF800R12KF4 is suitable for 6 applications: Industrial Motor Drives, Wind Turbine Converters, UPS Systems, Welding Equipment, Traction and High-Power Inverters, Solar Central Inverters.

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Industrial Motor Drives

The FF800R12KF4's 1200V/800A half-bridge configuration is a direct fit for high-power industrial variable frequency drives. The integrated fast-recovery freewheeling diodes handle inductive motor current during PWM switching, while trench-gate technology lowers VCE(sat) to reduce conduction losses in continuous-duty operation. Placed in the inverter stage between the DC bus and motor phases, the module's low-inductance package limits turn-off voltage overshoot on long bus bars, and its isolated baseplate simplifies mounting to forced-air heatsinks in drive cabinets.

⚑

Wind Turbine Converters

In wind turbine grid-side and machine-side converters, the FF800R12KF4 provides rugged 1200V switching with 800A capability for megawatt-class power stages. Its 5000W dissipation rating and low thermal resistance support the high cyclic loads typical of renewable energy conversion, while parallel-capable design allows scalable converter architectures. The module's robust isolated construction withstands the harsh vibration and temperature environments of nacelle installations; thermal cycling capability and a 150C junction limit are key reliability considerations for 20-year turbine lifetimes.

πŸ–₯️

UPS Systems

Large three-phase uninterruptible power supplies use the FF800R12KF4 in both the rectifier/PFC front end and the inverter output stage. The 1200V rating covers 400V-class DC bus systems with margin, and the dual-switch package halves component count per phase leg. Low switching losses from trench-gate IGBTs improve overall UPS efficiency, directly reducing operating energy costs in datacenter applications. The built-in anti-parallel diodes manage reactive load currents during battery-to-mains transfers, and the chassis-mount isolated baseplate eases integration into standard UPS power shelves.

πŸ”§

Welding Equipment

Heavy-duty industrial welding power sources benefit from the FF800R12KF4's 800A current handling and fast-recovery diodes in high-frequency inverter topologies. Welding loads impose extreme repetitive current pulses; the module's 5000W power dissipation rating and high thermal cycling robustness address this duty. Trench-gate technology provides low saturation voltage to limit heat in high-duty-cycle welding arcs, and the low-inductance package reduces switching spikes that could degrade arc stability. Snubber design and gate-drive layout are critical to control di/dt in these applications.

πŸš—

Traction and High-Power Inverters

Rail traction auxiliaries and high-power industrial inverters exploit the FF800R12KF4's ability to operate with adequate thermal margin in DC-link architectures around 600-800V. The dual half-bridge arrangement directly implements one inverter phase leg, and the module supports paralleling for higher output current. Its isolated baseplate with standardized mounting suits the vibration-prone traction environment. Designers should derate for junction temperature below 150C and verify SOA with actual DC-link voltage, gate resistance, and coolant conditions using the datasheet characteristic curves.

πŸ’‘

Solar Central Inverters

Utility-scale solar central inverters operating from 800V-class strings and DC buses use FF800R12KF4-class modules in the inverter bridge. The 1200V VCES rating provides headroom over 800V bus transients, and low conduction losses maximize weighted efficiency (CEC/EMI targets) across varying irradiance levels. Fast-recovery diodes handle reactive grid current, and parallel-module scalability supports 500kW-to-multi-MW blocks. Thermal design with liquid cooling plates and regular monitoring of Tj via on-state VCE sensing are recommended for long service life.

What are the key specifications of the FF800R12KF4 IGBT module?
The FF800R12KF4 is a 1200V, 800A dual-switch (half-bridge) IGBT module with built-in freewheeling diodes, rated for 5000W maximum power dissipation and 150C maximum junction temperature. According to the Infineon datasheet, it uses trench-gate IGBT technology in an isolated-baseplate chassis-mount package for industrial power conversion.
What is the price of FF800R12KF4?
Exact unit pricing for the FF800R12KF4 varies by distributor and quantity. As of 2026-08-29, Octopart lists pricing comparisons from 4 distributors and Wolfchip reported stock of 13,215 pieces updated December 2025. Request a quote from Mouser, DigiKey, or XAIPART for current quantity-based pricing.
Where to buy FF800R12KF4 online?
The FF800R12KF4 can be purchased from Mouser, DigiKey, Octopart-listed distributors (4 distributors compare pricing), and secondary distributors such as Win Source, Wolfchip, Veswin, and IC-Components. Mouser and DigiKey both list the part as the authorized primary channel; RFQ-based distributors support volume orders.
What is the difference between FF800R12KF4 and FF800R17KE3?
The main difference is voltage class: the FF800R12KF4 is rated 1200V VCES, while the FF800R17KE3 is rated 1700V with the same 800A current class. Both are Infineon dual IGBT modules for half-bridge use. Choose the 17KE3 for DC bus voltages above roughly 800V; choose the 12KF4 for standard 690V-class drives.
Is FF800R12KF4 the same as FF800R12KF6C_B2?
No, they are related but not identical. Both are Infineon 1200V 800A dual IGBT modules, but the FF800R12KF6C_B2 belongs to the newer KF6C generation with updated chip technology. Verify terminal geometry and electrical characteristics against both datasheets before substituting in an existing design.
What is the best drop-in replacement for FF800R12KF4?
The closest same-brand replacements are FF800R12KF6C_B2, FF800R16KF6-B2, and FF800R16KF6 from Infineon, which share the same module family and 800A-class dual configuration. Because high-power module footprints and terminal positions vary between generations, always confirm mechanical outline and terminal drawing compatibility before ordering.
Hey Google, what can replace FF800R12KF4?
For 1200V 800A dual IGBT modules, Infineon family members FF800R12KF6C_B2, FF800R16KF6-B2, and FF800R16KF6 are the nearest alternatives; for higher-voltage buses, FF800R17KE3 (1700V) applies. Cross-brand equivalents require verification of package outline, terminal position, and gate resistor values - no verified cross-brand drop-in was confirmed in current distributor data.
Where to download the FF800R12KF4 datasheet PDF?
The official FF800R12KF4 datasheet PDF (4 pages) is available via Infineon through Mouser at the Infineon-FF800R12KF4-DataSheet link, and mirrored on Alldatasheet under eupec GmbH (Infineon's power module brand), AiPCBA, and Digchip. Always prefer the manufacturer-hosted version for the latest revision.
What gate voltage does the FF800R12KF4 require?
The FF800R12KF4 requires approximately +15V gate-emitter voltage for full enhancement and -15V (negative bias) for reliable turn-off in half-bridge operation. Negative gate bias prevents parasitic turn-on from Miller current during high dv/dt switching. Consult the Infineon datasheet for exact VGES maximum ratings and gate-charge figures.
What applications is FF800R12KF4 suitable for?
The FF800R12KF4 is designed for industrial motor drives, wind turbine converters, UPS systems, and welding equipment. Its 1200V/800A rating and half-bridge configuration suit high-power DC-AC inverters where low conduction and switching losses are required for system efficiency.
When should I choose FF800R12KF4 over FF800R16KF6-B2?
Choose the FF800R12KF4 when your design targets the proven 1200V KF4 generation and existing qualification covers it; choose the FF800R16KF6-B2 when you need the newer 1600V-class chip technology with updated performance for DC bus voltages between 800V and 1000V. Both are 800A-class dual modules - compare VCE(sat) and switching energy curves for your operating point.
How much heatsinking does FF800R12KF4 need?
Heatsinking depends on dissipated power: at high load the module dissipates up to 5000W, so a liquid-cooled or large forced-air heatsink is typically required. Determine junction temperature from the datasheet thermal resistance values (RthJC and RthCH) and your coolant/air thermal resistance; keep Tj below 150C with margin for lifetime reliability.
Is FF800R12KF4 still in production and in stock?
Yes, the FF800R12KF4 is listed as an active product by Mouser and DigiKey. Wolfchip reported 13,215 pieces in stock updated December 2025, and Octopart compares offers from 4 distributors as of 2026-08-29, indicating healthy availability through authorized and independent channels.
Is FF800R12KF4 RoHS compliant?
RoHS compliance for the FF800R12KF4 is not confirmed in the retrieved data; mark as unknown until verified against the Infineon product page. High-power modules often carry specific exemptions for solder and lead-containing die attach - check the Infineon certificate of compliance for the current status.

Engineering reference data for FF800R12KF4 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the FF800R12KF4 when you need a proven 1200V/800A half-bridge module for industrial motor drives, wind converters, UPS, or welding systems operating from 690V-class AC or DC buses up to roughly 800V. Choose FF800R12KF6C_B2 if you are starting a new design and want the newer KF6C chip generation with reduced losses, accepting re-qualification effort. Choose FF800R16KF6-B2 or FF800R16KF6 when DC bus voltages approach or exceed 1000V, and FF800R17KE3 for 1700V-class requirements. All listed alternatives are Infineon 800A dual modules in the same product family, but terminal positions and outlines vary between generations - always verify mechanical drawings and thermal data against your heatsink and busbar design before committing to a cross-generation substitution.

Comparison with Alternatives

Parameter This Product FF800R12KF6C_B2 FF800R16KF6-B2 FF800R17KE3
Package High-power IGBT module, isolated baseplate Same module family - verify outline Same module family - verify outline Same module family - verify outline
Brand Infineon Infineon Infineon Infineon
VCES 1200 V 1200 V 1600 V 1700 V
Continuous Collector Current 800 A 800 A 800 A 800 A
Configuration Dual switch (half-bridge) with diodes Dual switch with diodes Dual switch with diodes Dual switch with diodes
Chip Generation KF4 trench-gate KF6C (newer) KF6 E3
Max Power Dissipation 5000 W [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Lifecycle Status Active [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • 1200V class for standard 690V drive buses (vs FF800R17KE3)
  • 5000W power dissipation rating (vs FF800R16KF6-B2)
  • Parallel-operation capability (vs FF800R12KF6C_B2)

Design Notes

The FF800R12KF4 can dissipate up to 5000W at full rating. Calculate junction temperature as Tj = Tamb + Ptotal * (RthJC + RthCH + Rth heatsink-to-ambient) using datasheet thermal values. For continuous high-load duty (motor drives, wind converters), liquid cooling or large forced-air heatsinks are typically mandatory. Keep Tj well below the 150C maximum - every 10C reduction roughly doubles module lifetime per standard power-module wear-out models.

Drive the gate with +15V for turn-on and -15V negative bias for turn-off. Negative bias is essential in half-bridge operation to prevent Miller-induced parasitic turn-on during high dv/dt switching of the complementary device. Size the gate resistor to balance switching loss against EMI and di/dt limits, and route gate traces with low inductance, twisted with the emitter Kelvin return where the package provides auxiliary emitter terminals.

Do not exceed the 1200V VCES rating: DC-link overshoot during short-circuit turn-off can exceed bus voltage substantially. Include DC-link snubbers or minimize bus inductance with laminated busbar design, and verify turn-off overvoltage at maximum load current. Also confirm mechanical compatibility (terminal position is upper, chassis mount, not surface mount) before substituting other 800A-class modules - outlines differ across generations.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

Compliance status not present in retrieved data; verify against Infineon product page and certificate of compliance.

Data verified on: 2026-08-29 β€” data verified and curated by XAIPART's component engineering team

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