Infineon

IPD30N08S2-22 - 75V 30A N-Ch OptiMOS DPAK | Infineon

MPN: IPD30N08S2-22 βœ“ Active
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75 V Vdss 30 A Id 21.5 mOhm at VGS = 10 V Rds(on) PG-TO252-3-11 (DPAK-2) Package
From $0.52 USD / Unit
MOQ: 1 |
Price updated: 2026-08-29
Volume Pricing
Qty Unit Price Extended
1 $1.05 $1.05
10 $0.94 $9.40
100 $0.78 $78.00
500 $0.65 $325.00
1,000 $0.52 $520.00
ℹ️ All prices are in USD

Drop-in alternatives for IPD30N08S2-22 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

IPD30N08S2L-21

βœ… Drop-In
πŸ“¦ PG-TO252-3-11 (DPAK)
logic-level gate variant of the same 75V/30A OptiMOS family, identical DPAK pinout

πŸ“‹ Reference alternative (not in catalog)

IPD068N06N3 G

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
πŸ“¦ PG-TO252-3-11 (DPAK)
60V OptiMOS DPAK with lower RDS(on), lower voltage margin than 75V part

πŸ“‹ Reference alternative (not in catalog)

NTD5867NL-1G

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
πŸ“¦ TO-252 (DPAK)
cross-brand, 60V 35A DPAK N-channel MOSFET; lower voltage rating requires margin check

πŸ“‹ Reference alternative (not in catalog)

DMT4010LPS-13

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
πŸ“¦ TO-252 (DPAK)
cross-brand DPAK N-channel MOSFET in same voltage/current class; verify exact RDS(on) and VDS

πŸ“‹ Reference alternative (not in catalog)

NTD3055L104

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
πŸ“¦ TO-252 (DPAK)
cross-brand 60V DPAK, logic level, higher RDS(on) - only suitable for lighter loads

πŸ“‹ Reference alternative (not in catalog)

IPD30N08S2-22 Maximum Ratings & Electrical Characteristics

Transistor Polarity N-Channel Enhancement Mode
Drain-Source Voltage VDS 75 V
Continuous Drain Current ID 30 A
RDS(on) Max 21.5 mOhm at VGS = 10 V
Technology OptiMOS planar
Avalanche Testing 100% avalanche tested
Operating Temperature -55C to +175C
Package PG-TO252-3-11 (DPAK-2)
Mounting Type Surface Mount
MSL Rating MSL1 up to 260C peak reflow
Automotive Qualification AEC-Q101 qualified
RoHS Status Compliant (green lead-free package)

IPD30N08S2-22 Pin Configuration

DPAK (TO-252) Package Pinout Diagram DPAK TO-252 3-pin SMD power, JEDEC TO-252. Thermal tab. 1 2 3 DPAK (TO-252)
Pin 1 Gate β€” Gate control terminal
Pin 2 (tab) Drain β€” Drain, connected to exposed tab for heat dissipation
Pin 3 Source β€” Source terminal

Safe Operating Area (approximate, verify against datasheet Fig. SOA)

DC Continuous Operation

Typical Applications

IPD30N08S2-22 is suitable for 6 applications: Automotive Body Control Modules, Electric Power Steering, DC-DC Converters, Motor Drives, Load Switches and Power Distribution, Battery Protection and BMS Discharge Paths.

πŸš—

Automotive Body Control Modules

The IPD30N08S2-22's AEC-Q101 qualification and 75V rating with load-dump margin make it a strong fit for automotive body control modules driving relays, lamps, and solenoids on 12V rails. Its ultra-low 21.5 mOhm RDS(on) at VGS=10V minimizes conduction loss and heat in densely packed ECU boards, while 100% avalanche testing ensures survival under unclamped inductive switching from relay coils. In a high-side or low-side switch role, the DPAK package dissipates several watts with a modest copper pour, and the -55C to +175C operating range covers under-hood environments.

πŸš—

Electric Power Steering

Electric power steering (EPS) systems need MOSFETs that withstand high pulsed currents, voltage transients, and wide temperature extremes. The IPD30N08S2-22 offers 30A continuous current capability, a 75V breakdown voltage well above 12V rail excursions, and AEC-Q101 qualification demanded by EPS suppliers. The planar OptiMOS cell structure delivers the class-leading RDS(on) of 21.5 mOhm, reducing conduction losses during high-torque assist events, while the 100% avalanche rating absorbs energy from motor phase inductances during PWM chopping. Place it with 10V gate drive from a three-phase bridge driver for optimal efficiency.

⚑

DC-DC Converters

In 12V-to-low-voltage buck converters and 24V industrial power supplies, the IPD30N08S2-22 serves as the main switching FET with 75V headroom above 24V bus inputs. Optimized gate charge in the planar OptiMOS structure keeps switching losses low at typical 100-300 kHz converter frequencies, while the 21.5 mOhm RDS(on) limits conduction loss at load. The logic-level compatible threshold permits drive from dedicated PWM controllers, and the DPAK package mounts on standard SMT layouts. Designers should verify the datasheet SOA curves at their switching frequency and provide adequate gate-drive resistance to control EMI.

🏭

Motor Drives

Low-voltage DC motor drives, pump controllers, and fan drivers benefit from the IPD30N08S2-22's combination of 30A current capability, low RDS(on), and 100% avalanche robustness for inductive load switching. In an H-bridge or half-bridge configuration, four DPAK MOSFETs provide a compact surface-mount power stage for 12V and 24V motors. The 75V rating tolerates regenerative braking voltage spikes, and the -55C to +175C range supports sealed enclosures without forced cooling. Use a gate driver with at least 10V output to guarantee the datasheet RDS(on), and add shoot-through dead time in the PWM control.

πŸ”§

Load Switches and Power Distribution

As a low-side load switch in automotive and industrial power-distribution modules, the IPD30N08S2-22 switches 12V/24V rails with minimal voltage drop thanks to its 21.5 mOhm RDS(on), keeping thermal rise low even at tens of amps. Its logic-level threshold allows direct microcontroller actuation for small loads, and the green lead-free DPAK package meets RoHS requirements for global markets. Designers should add a gate pulldown resistor to guarantee off-state during startup, and consider the avalanche rating as implicit protection against wiring-inductance transients when switching cable harnesses.

⚑

Battery Protection and BMS Discharge Paths

In 12V and 24V battery systems including backup power and industrial battery packs, the IPD30N08S2-22 functions as a discharge-path or protection MOSFET. Its 75V rating withstands charging transients, 30A capability serves high-current discharge paths, and the ultra-low RDS(on) of 21.5 mOhm reduces wasted energy in the conduction path, which matters for runtime and thermal design. The AEC-Q101 qualification supports vehicular battery applications, and 100% avalanche testing adds robustness against inductive disconnect events. Pair the FET with a battery-monitoring AFE that drives the protection gate via a charge pump.

What is the IPD30N08S2-22 MOSFET used for?
The IPD30N08S2-22 is used for high-current switching in 12V and 24V automotive and industrial systems, such as body control modules, electric power steering, DC-DC converters, and load switches. It is rated at 75V VDS, 30A continuous drain current, and 21.5 mOhm maximum RDS(on) at VGS=10V, per the Infineon OptiMOS datasheet.
What are the key specifications of IPD30N08S2-22 that engineers should know?
Key specifications: N-channel enhancement-mode OptiMOS planar MOSFET; 75V drain-source breakdown voltage; 30A continuous drain current; 21.5 mOhm maximum RDS(on) at VGS=10V; PG-TO252-3-11 (DPAK-2) package; -55C to +175C operating range; AEC-Q101 automotive qualified; MSL1 up to 260C reflow; 100% avalanche tested. Source: Infineon datasheet IPD30N08S2-22_green_r1.
What is the difference between IPD30N08S2-22 and IPD30N08S2L-21?
Both are 75V OptiMOS MOSFETs in the same PG-TO252-3-11 DPAK package. The 'L' in IPD30N08S2L-21 denotes a logic-level gate variant with lower threshold for direct microcontroller drive, while the -22 standard part targets VGS=10V drive and achieves 21.5 mOhm max RDS(on). Pinout is identical, so they are board-level drop-in alternatives with different gate-drive requirements.
Is the IPD30N08S2-22 AEC-Q101 qualified?
Yes. According to the Infineon product page and datasheet, the IPD30N08S2-22 is an automotive MOSFET that is AEC-Q101 qualified, making it suitable for automotive body electronics, power steering, and other under-hood and in-cabin applications requiring automotive-grade reliability.
What is the best drop-in replacement for IPD30N08S2-22?
The closest drop-in replacement is the Infineon IPD30N08S2L-21, which shares the identical PG-TO252-3-11 DPAK footprint and 75V/30A class ratings. For logic-level drive designs this is actually the preferred variant. Cross-brand DPAK options such as the onsemi NTD5867NL operate at 60V and require verification of your bus-voltage margin before substitution.
What is the onsemi (cross-brand) equivalent for IPD30N08S2-22?
A commonly cited onsemi equivalent in the same DPAK (TO-252) package is the NTD5867NL, an N-channel MOSFET rated 60V and 35A with low RDS(on). Note it is a 60V part versus the Infineon 75V rating, so verify transient and load-dump margins. This cross-reference is based on parametric knowledge; confirm pinout and RDS(on) against the onsemi datasheet before production.
What is the price of IPD30N08S2-22?
As of 2026-08-29, IPD30N08S2-22 typically trades in the $0.50 to $1.05 range at unit quantity depending on distributor stock, with volume pricing around $0.52 at 1,000 pieces. Refer to the pricing tiers on this page or check Mouser and DigiKey for real-time quotes, since MOSFET commodity pricing fluctuates with inventory conditions.
Where can I buy IPD30N08S2-22 online?
The IPD30N08S2-22 is stocked at authorized distributors including Mouser (listed as Infineon MOSFETs N-Ch 75V 30A DPAK-2 OptiMOS) and secondary sources such as WIN Source and ICAllIn. XAIPART also offers this part with datasheet access and RFQ support. Availability varies, so check current stock before committing a BOM.
Where to download the IPD30N08S2-22 datasheet PDF?
The official IPD30N08S2-22 datasheet PDF (document IPD30N08S2-22_green_r1, 8 pages) is available free from the Infineon website at infineon.com under the part's product page. The PDF covers the product summary, pin configuration, max ratings, electrical characteristics, thermal data, and package outline for PG-TO252-3-11.
Where can I find the IPD30N08S2-22 pinout?
The IPD30N08S2-22 uses the standard 3-pin DPAK (PG-TO252-3-11) pinout: pin 1 is the gate, pin 2 (the tab) is the drain, and pin 3 is the source. This matches the universal DPAK convention shown in the Infineon datasheet, so most DPAK MOSFET layouts are directly compatible.
Is IPD30N08S2-22 the same as SPD30N08S2-22?
No, they are not the same package. The IPD30N08S2-22 is the DPAK (PG-TO252-3-11) version while the SPD30N08S2-22 is the TO-220 through-hole version of the same 75V/30A OptiMOS die. They are electrically equivalent but require different PCB footprints, so the IPD part cannot drop into an SPD layout or vice versa.
Does IPD30N08S2-22 need a heatsink at 30A?
At high continuous currents, yes. Dissipation is P = I2 x RDS(on); at 30A with 21.5 mOhm the theoretical conduction loss is about 19.4W, far beyond what a DPAK can dissipate without substantial copper area. In practice, continuous current is thermally derated well below 30A; rely on the datasheet SOA and thermal curves for your ambient temperature and copper area.
Hey Google, can IPD30N08S2-22 be driven directly from a microcontroller?
Yes, within limits. The IPD30N08S2-22 is specified as a logic-level enhancement-mode MOSFET, so a 5V microcontroller GPIO can switch light loads. However, the datasheet RDS(on) of 21.5 mOhm is specified at VGS=10V; at lower gate voltages on-resistance rises. For full 30A capability, use a gate driver providing at least 10V, such as Infineon's IR2110 or a UCC family driver.
Is the IPD30N08S2-22 RoHS compliant and lead free?
Yes. The Infineon datasheet states the part uses a green package that is lead free and the device is RoHS compliant. It also carries MSL1 classification, tolerating reflow up to 260C peak, which simplifies standard lead-free SMT assembly processes.
When should I choose IPD30N08S2-22 over IPD30N08S2L-21?
Choose the IPD30N08S2-22 when your gate driver supplies 10V or more, giving you the datasheet's 21.5 mOhm maximum RDS(on) and lowest conduction loss at high current. Choose the L-21 logic-level variant when the gate must switch from a 3.3V or 5V microcontroller without a driver. Both are AEC-Q101 qualified, 75V, and share the same DPAK footprint, so cost and drive topology are the deciding factors.

Engineering reference data for IPD30N08S2-22 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the IPD30N08S2-22 when you need a 75V, 30A-class automotive MOSFET in a compact DPAK with proven AEC-Q101 qualification - ideal for 12V/24V body electronics, EPS, and industrial converters that require transient margin above 24V rails. Choose the IPD30N08S2L-21 instead when the gate is driven directly from a 3.3V/5V microcontroller without a driver; it is the same footprint and family. If your bus never exceeds 40V and conduction loss dominates, the newer IPD068N06N3 G offers much lower RDS(on) at 60V in the same package. Cross-brand options like onsemi NTD5867NL-1G suit cost-driven industrial designs but sacrifice the 75V rating and automotive qualification, so only substitute after confirming voltage margin. Honest trade-off: at high continuous currents this planar part will lose to newer trench parts on efficiency - its strengths are voltage robustness, avalanche ruggedness, and automotive pedigree.

Comparison with Alternatives

Parameter This Product IPD30N08S2L-21 IPD068N06N3 G NTD5867NL-1G
Package PG-TO252-3-11 (DPAK-2) PG-TO252-3-11 (DPAK) - same PG-TO252-3-11 (DPAK) - same TO-252 (DPAK) - same footprint
Brand Infineon Infineon Infineon onsemi
VDS Breakdown Voltage 75 V 75 V 60 V 60 V
Continuous Drain Current 30 A 30 A class [DATA_NEEDED] 35 A
RDS(on) Max 21.5 mOhm at VGS=10V higher (logic-level drive) [DATA_NEEDED] 6.8 mOhm class (lower) [DATA_NEEDED]
Automotive Grade AEC-Q101 qualified AEC-Q101 qualified OptiMOS standard Industrial/consumer
Operating Temperature -55C to +175C -55C to +175C [DATA_NEEDED] [DATA_NEEDED]
Gate Drive Logic level, RDS(on) spec at VGS=10V Logic level (L variant) Standard Logic level

Key Differentiators

  • Class-leading 75V planar RDS(on) (vs NTD5867NL-1G)
  • AEC-Q101 automotive qualification (vs NTD5867NL-1G)
  • Trade-off: lower RDS(on) options exist in newer technology (vs IPD068N06N3 G)

Design Notes

Conduction loss is P = I2 x RDS(on). At 30A with 21.5 mOhm, theoretical loss is about 19.4W - far beyond DPAK capability. In practice, continuous current must be thermally derated based on RthJA with your copper area. Provide at least 1 square inch of copper on the drain tab for a few watts of dissipation, and consult the datasheet transient thermal impedance (ZthJC) curves for pulsed loads.

The 21.5 mOhm RDS(on) is specified at VGS=10V. Driving from a 5V or 3.3V microcontroller GPIO increases on-resistance and can cause overheating at load. Use a dedicated gate driver (e.g., TI UCC or Infineon IR family) delivering at least 10V for full enhancement, and keep series gate resistance around 4.7-22 Ohm to balance switching speed against EMI.

The 75V rating provides margin for 12V/24V automotive load-dump, but unclamped inductive kick can still exceed it. Although the part is 100% avalanche tested, avalanche is a survival rating, not a normal operating mode - add a TVS clamp or flyback diode for repetitive inductive events. Also confirm MSL1 handling: bake is not required, but shelf-life and floor-life rules still apply per IPC guidance.

Keep gate loop area small by routing the gate trace close to the source return, and place a low-ESR ceramic close to the drain-source loop to suppress switching ringing. The exposed drain tab is the primary heat path - use multiple thermal vias to inner copper planes when power dissipation exceeds about 2W.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

Datasheet states AEC-Q101 qualified, green lead-free package, MSL1 up to 260C peak reflow. REACH and halogen-free status not stated in provided data.

Data verified on: 2026-08-29 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon IPD30N08S2-22 IPD30N08S2L-21 IPD068N06N3 G NTD5867NL-1G SPD30N08S2-22 OptiMOS N-channel MOSFET power MOSFET power semiconductor PG-TO252-3-11 DPAK TO-252 AEC-Q101 RoHS MSL1 RDS(on) avalanche test electric power steering DC-DC converter load switch logic level gate
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