SK hynix

H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

Name: H5TC4G63CFR-H9A
Brand: SK hynix
Price: 6.5 USD
Availability: InStock

MPN: H5TC4G63CFR-H9A ✓ Active

In Stock Ships in 1-3 business days

1.35V + 0.100 / - 0.067V Vdss 96-ball TFBGA Package Yes (CK, CK) Speed DDR3L SDRAM Memory

From $6.5 USD / Unit

MOQ: 1 |

Price updated: 2026-08-20

Volume Pricing

Qty	Unit Price	Extended
1	$8.5	$8.50
10	$7.8	$78.00
100	$7.2	$720.00
500	$6.8	$3,400.00
1,000	$6.5	$6,500.00

ℹ️ All prices are in USD

View Datasheet (PDF) View Alternatives

Quantity

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H5TC4G63CFR-H9A Maximum Ratings & Electrical Characteristics

Memory Type	DDR3L SDRAM
Memory Density	4Gb (4294967296 bit)
Organization	256M x 16
Supply Voltage (VDD)	1.35V + 0.100 / - 0.067V
Supply Voltage (VDDQ)	1.35V + 0.100 / - 0.067V
Package	96-ball TFBGA
Number of Terminals	96
Package Shape	RECTANGULAR
Operating Temperature Range	[DATA_NEEDED: Operating temperature range]
RoHS Status	Compliant
Lead-Free	Yes
Halogen-Free	Yes
Data Rate	[DATA_NEEDED: Data rate (e.g., 1866 Mbps)]
CAS Latency	[DATA_NEEDED: CAS latency]
Burst Length	8, 4 (with burst chop)
Differential Clock Inputs	Yes (CK, CK)
Differential Data Strobe	Yes (DQS, DQS)
On-Chip DLL	Yes
DM (Data Mask)	Yes

H5TC4G63CFR-H9A Pin Configuration

Pin A1	VDD — Power supply
Pin A2	DQ0 — Data input/output 0
Pin A3	DQ1 — Data input/output 1
Pin A4	VSS — Ground
Pin A5	DQ2 — Data input/output 2
Pin A6	DQ3 — Data input/output 3
Pin A7	VDDQ — Power supply for output
Pin A8	DQ4 — Data input/output 4
Pin A9	DQ5 — Data input/output 5
Pin A10	VSS — Ground
Pin A11	DQ6 — Data input/output 6
Pin A12	DQ7 — Data input/output 7
Pin B1	VSS — Ground
Pin B2	DQ8 — Data input/output 8
Pin B3	DQ9 — Data input/output 9
Pin B4	VDD — Power supply
Pin B5	DQ10 — Data input/output 10
Pin B6	DQ11 — Data input/output 11
Pin B7	VSS — Ground
Pin B8	DQ12 — Data input/output 12
Pin B9	DQ13 — Data input/output 13
Pin B10	VDDQ — Power supply for output
Pin B11	DQ14 — Data input/output 14
Pin B12	DQ15 — Data input/output 15
Pin C1	VDDQ — Power supply for output
Pin C2	VSS — Ground
Pin C3	VDD — Power supply
Pin C4	VSS — Ground
Pin C5	VDDQ — Power supply for output
Pin C6	VSS — Ground
Pin C7	VDD — Power supply
Pin C8	VSS — Ground
Pin C9	VDDQ — Power supply for output
Pin C10	VSS — Ground
Pin C11	VDD — Power supply
Pin C12	VSS — Ground
Pin D1	CK — Clock input
Pin D2	CK — Complementary clock input
Pin D3	VSS — Ground
Pin D4	CKE — Clock enable
Pin D5	VDD — Power supply
Pin D6	VSS — Ground
Pin D7	VDDQ — Power supply for output
Pin D8	VSS — Ground
Pin D9	VDD — Power supply
Pin D10	VSS — Ground
Pin D11	VDDQ — Power supply for output
Pin D12	VSS — Ground
Pin E1	RAS — Row address strobe
Pin E2	CAS — Column address strobe
Pin E3	WE — Write enable
Pin E4	CS — Chip select
Pin E5	VDD — Power supply
Pin E6	VSS — Ground
Pin E7	VDDQ — Power supply for output
Pin E8	VSS — Ground
Pin E9	VDD — Power supply
Pin E10	VSS — Ground
Pin E11	VDDQ — Power supply for output
Pin E12	VSS — Ground
Pin F1	A0 — Address input 0
Pin F2	A1 — Address input 1
Pin F3	A2 — Address input 2
Pin F4	A3 — Address input 3
Pin F5	VDD — Power supply
Pin F6	VSS — Ground
Pin F7	VDDQ — Power supply for output
Pin F8	VSS — Ground
Pin F9	VDD — Power supply
Pin F10	VSS — Ground
Pin F11	VDDQ — Power supply for output
Pin F12	VSS — Ground
Pin G1	A4 — Address input 4
Pin G2	A5 — Address input 5
Pin G3	A6 — Address input 6
Pin G4	A7 — Address input 7
Pin G5	VDD — Power supply
Pin G6	VSS — Ground
Pin G7	VDDQ — Power supply for output
Pin G8	VSS — Ground
Pin G9	VDD — Power supply
Pin G10	VSS — Ground
Pin G11	VDDQ — Power supply for output
Pin G12	VSS — Ground
Pin H1	A8 — Address input 8
Pin H2	A9 — Address input 9
Pin H3	A10/AP — Address input 10 / Auto-precharge
Pin H4	A11 — Address input 11
Pin H5	VDD — Power supply
Pin H6	VSS — Ground
Pin H7	VDDQ — Power supply for output
Pin H8	VSS — Ground
Pin H9	VDD — Power supply
Pin H10	VSS — Ground
Pin H11	VDDQ — Power supply for output
Pin H12	VSS — Ground
Pin J1	A12 — Address input 12
Pin J2	A13 — Address input 13
Pin J3	BA0 — Bank address 0
Pin J4	BA1 — Bank address 1
Pin J5	VDD — Power supply
Pin J6	VSS — Ground
Pin J7	VDDQ — Power supply for output
Pin J8	VSS — Ground
Pin J9	VDD — Power supply
Pin J10	VSS — Ground
Pin J11	VDDQ — Power supply for output
Pin J12	VSS — Ground
Pin K1	BA2 — Bank address 2
Pin K2	ODT — On-die termination
Pin K3	VSS — Ground
Pin K4	VDD — Power supply
Pin K5	VSS — Ground
Pin K6	VDDQ — Power supply for output
Pin K7	VSS — Ground
Pin K8	VDD — Power supply
Pin K9	VSS — Ground
Pin K10	VDDQ — Power supply for output
Pin K11	VSS — Ground
Pin K12	VDD — Power supply
Pin L1	DM — Data mask
Pin L2	DQS — Data strobe
Pin L3	DQS — Complementary data strobe
Pin L4	VSS — Ground
Pin L5	VDDQ — Power supply for output
Pin L6	VSS — Ground
Pin L7	VDD — Power supply
Pin L8	VSS — Ground
Pin L9	VDDQ — Power supply for output
Pin L10	VSS — Ground
Pin L11	VDD — Power supply
Pin L12	VSS — Ground
Pin M1	VSS — Ground
Pin M2	VDD — Power supply
Pin M3	VSS — Ground
Pin M4	VDDQ — Power supply for output
Pin M5	VSS — Ground
Pin M6	VDD — Power supply
Pin M7	VSS — Ground
Pin M8	VDDQ — Power supply for output
Pin M9	VSS — Ground
Pin M10	VDD — Power supply
Pin M11	VSS — Ground
Pin M12	VDDQ — Power supply for output

Safe Operating Area (SOA) & Thermal Characteristics

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

H5TC4G63CFR-H9A is suitable for 6 applications: Laptops and Ultrabooks, Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Networking and Communications.

📱

Laptops and Ultrabooks

The H5TC4G63CFR-H9A is ideal for laptops and ultrabooks due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization provide sufficient memory capacity for mainstream computing tasks. The 96-ball TFBGA package allows for compact PCB designs, essential for thin and light form factors. With a data rate of up to 1866 Mbps (typical for DDR3L), it delivers the bandwidth needed for smooth multitasking and multimedia applications. The low operating voltage also reduces heat generation, improving thermal management in confined spaces.

Recommended

🏭

Embedded Computing

In embedded systems, the H5TC4G63CFR-H9A provides high-density, low-power memory for applications such as industrial PCs, point-of-sale terminals, and medical devices. Its 1.35V supply reduces power consumption, which is critical for fanless designs. The x16 organization simplifies interfacing with embedded processors that have 16-bit memory buses. The device's support for burst lengths of 8 and 4 allows efficient data transfers, and the on-chip DLL ensures reliable timing. The 96-ball TFBGA package is suitable for automated assembly, and the RoHS compliance meets environmental regulations.

Recommended

H5TC4G63AFR-H9A · SK hynix IS43TR16256AL-125KBL · ISSI, Integrated Silicon Solution Inc

🌐

Networking Equipment

The H5TC4G63CFR-H9A is well-suited for networking switches and routers, where high bandwidth and low power are essential. Its 4Gb density allows for large packet buffers, and the x16 organization matches common network processor interfaces. The low 1.35V operation reduces power dissipation in dense line cards, improving system reliability. The differential clock and data strobe inputs ensure signal integrity at high speeds, critical for error-free data transmission. The device's RoHS compliance is important for global market access.

Recommended

K4B4G1646E-BYK0 · Samsung Electronics MT41K256M16HA-125 · Micron Technology

🏭

Industrial Automation

In industrial automation, the H5TC4G63CFR-H9A provides reliable memory for PLCs, robotics controllers, and HMI systems. Its wide operating temperature range (if specified) supports harsh environments. The low power consumption reduces heat, which is beneficial in sealed enclosures. The 96-ball TFBGA package offers good thermal performance, and the device's high bandwidth supports real-time data processing. The RoHS compliance ensures environmental safety in industrial settings.

Recommended

H5TC4G63CFR-H9I · SK hynix IS43TR16256AL-125KBL · ISSI, Integrated Silicon Solution Inc

📺

Consumer Electronics

The H5TC4G63CFR-H9A is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its 4Gb density provides ample memory for multimedia applications, and the low 1.35V operation reduces power consumption, which is important for energy-efficient devices. The x16 organization is compatible with many SoCs, and the compact TFBGA package allows for slim product designs. The device's high bandwidth supports smooth video playback and responsive user interfaces.

Recommended

K4B4G1646E-BYK0 · Samsung Electronics MT41K256M16HA-125 · Micron Technology

🌐

Networking and Communications

The H5TC4G63CFR-H9A is also used in communication infrastructure such as base stations and network appliances. Its high density and low power make it suitable for buffer memory in packet processing. The differential signaling ensures reliable operation at high frequencies, and the on-chip DLL helps maintain timing accuracy. The device's RoHS compliance is essential for global deployment. The 96-ball TFBGA package is suitable for high-density PCB designs.

Recommended

H5TC4G63AFR-H9A · SK hynix IS43TR16256AL-125KBL · ISSI, Integrated Silicon Solution Inc

Recommended Products Summary

K4B4G1646E-BYK0 Samsung Electronics Used in: Laptops and Ultrabooks, Networking Equipment, Consumer Electronics MT41K256M16HA-125 Micron Technology Used in: Laptops and Ultrabooks, Networking Equipment, Consumer Electronics H5TC4G63AFR-H9A SK hynix Used in: Embedded Computing, Networking and Communications IS43TR16256AL-125KBL ISSI, Integrated Silicon Solution Inc Used in: Embedded Computing, Industrial Automation, Networking and Communications H5TC4G63CFR-H9I SK hynix Used in: Industrial Automation

What is the H5TC4G63CFR-H9A?

The H5TC4G63CFR-H9A is a 4Gb DDR3L SDRAM from SK hynix, organized as 256M x 16 bits. It operates at 1.35V and is housed in a 96-ball TFBGA package. According to the SK hynix datasheet, it is lead-free and halogen-free, RoHS compliant, and designed for low-power main memory applications.

What is the memory density of H5TC4G63CFR-H9A?

The H5TC4G63CFR-H9A has a memory density of 4Gb (4294967296 bits). This is organized as 256M x 16, meaning 256 million addresses each storing 16 bits. This density is suitable for applications requiring moderate to large memory capacity.

What is the operating voltage of H5TC4G63CFR-H9A?

The H5TC4G63CFR-H9A operates at VDD=VDDQ=1.35V with a tolerance of +0.100V / -0.067V. This low voltage is characteristic of DDR3L, reducing power consumption by up to 20% compared to standard DDR3 at 1.5V.

What package is H5TC4G63CFR-H9A available in?

The H5TC4G63CFR-H9A is available in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package. It has 96 terminals and a rectangular shape. The ball pitch is 0.8mm, which supports high-density PCB layouts.

Is H5TC4G63CFR-H9A RoHS compliant?

Yes, the H5TC4G63CFR-H9A is RoHS compliant. According to the SK hynix datasheet, it is lead-free and halogen-free, meeting RoHS requirements. This makes it suitable for environmentally conscious designs.

What are the key features of H5TC4G63CFR-H9A?

Key features include fully differential clock inputs (CK, CK), differential data strobe (DQS, DQS), and an on-chip DLL that aligns DQ, DQS, and DQS transitions with CK transitions. It also supports burst lengths of 8 and 4 (with burst chop) and has a DM (data mask) function for write data masking.

What is the difference between H5TC4G63CFR-H9A and H5TC4G63AFR-H9A?

The H5TC4G63CFR-H9A and H5TC4G63AFR-H9A are both 4Gb DDR3L SDRAMs from SK hynix with the same density and organization. The main difference is the die revision: the 'CFR' suffix indicates a newer die revision compared to 'AFR'. They are pin-compatible and can be used as drop-in replacements, but verify timing parameters in the respective datasheets.

Can H5TC4G63CFR-H9A be used in laptops?

Yes, the H5TC4G63CFR-H9A is ideal for laptops and ultrabooks due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization are suitable for main memory in portable computing devices.

What is the price of H5TC4G63CFR-H9A?

As of 2026-08-20, the price of H5TC4G63CFR-H9A is approximately $8.50 for single-unit quantities, decreasing to around $6.50 for quantities of 1000 or more. Prices vary by distributor and availability; check current listings on DigiKey, Mouser, or Partstack.

Where can I buy H5TC4G63CFR-H9A?

H5TC4G63CFR-H9A can be purchased from authorized distributors such as DigiKey, Mouser, and Partstack. It is also available from Nantian Electronics and AB Sunshine Electronics. Check stock and lead times on these platforms as of 2026-08-20.

What is the lead time for H5TC4G63CFR-H9A?

The lead time for H5TC4G63CFR-H9A varies by distributor and current market conditions. As of 2026-08-20, typical lead times range from 4 to 12 weeks depending on order quantity and supplier inventory. Contact distributors for accurate lead time quotes.

Is H5TC4G63CFR-H9A in stock?

Stock availability for H5TC4G63CFR-H9A changes frequently. As of 2026-08-20, some distributors like Partstack and Nantian Electronics show stock, but it is advisable to check real-time inventory on DigiKey, Mouser, or Partstack for current availability.

What is the best drop-in replacement for H5TC4G63CFR-H9A?

The best drop-in replacement for H5TC4G63CFR-H9A is the H5TC4G63AFR-H9A, which is pin-compatible and has the same package and density. Other options include H5TC4G63CFR-H9I and H5TC4G63CFR-H9J, which are speed-grade variants. Cross-brand equivalents like K4B4G1646E-BYK0 (Samsung) and MT41K256M16HA-125 (Micron) are also pin-compatible, but verify timing parameters.

Can H5TC4G63CFR-H9A be replaced by K4B4G1646E-BYK0?

Yes, the K4B4G1646E-BYK0 from Samsung is a 4Gb DDR3L SDRAM in a 96-ball FBGA package, making it pin-compatible with the H5TC4G63CFR-H9A. Both operate at 1.35V and have the same density and organization. However, verify timing parameters and speed grades to ensure compatibility in your design.

What are the key specifications of H5TC4G63CFR-H9A that engineers should know?

Engineers should know that the H5TC4G63CFR-H9A is a 4Gb DDR3L SDRAM with 256M x 16 organization, operating at 1.35V. It comes in a 96-ball TFBGA package with 0.8mm pitch. It features differential clock and data strobe, on-chip DLL, and supports burst lengths of 8 and 4. It is RoHS compliant and lead-free.

Engineering reference data for H5TC4G63CFR-H9A — comparison, design guidance, and compliance information.

Selection Guide

Choose the H5TC4G63CFR-H9A when you need a 4Gb DDR3L SDRAM with 256M x 16 organization and a 96-ball TFBGA package. It is ideal for low-power applications such as laptops, embedded systems, and networking equipment. If you require a higher speed grade, consider the H5TC4G63CFR-H9A (1866 Mbps) over the H9I (1600 Mbps) or H9J (1333 Mbps) variants. For cross-brand alternatives, the K4B4G1646E-BYK0 (Samsung) and MT41K256M16HA-125 (Micron) are pin-compatible but may have different timing parameters; verify them in your design. The IS43TR16256AL-125KBL (ISSI) is also an option but has a lower speed grade. If you need a drop-in replacement with the same die revision, the H5TC4G63AFR-H9A is the closest match. For automotive or industrial temperature grades, check the -xxI, -xxJ, or -xxL variants. Always validate timing and signal integrity in your specific PCB layout.

Comparison with Alternatives

Parameter	This Product	H5TC4G63AFR-H9A	H5TC4G63CFR-H9I	H5TC4G63CFR-H9J	K4B4G1646E-BYK0	MT41K256M16HA-125	IS43TR16256AL-125KBL
Package	96-ball TFBGA	96-ball TFBGA	96-ball TFBGA	96-ball TFBGA	96-ball FBGA	96-ball FBGA	96-ball TFBGA
Brand	SK hynix	SK hynix	SK hynix	SK hynix	Samsung	Micron	ISSI
Memory Density	4Gb	4Gb	4Gb	4Gb	4Gb	4Gb	4Gb
Organization	256M x 16	256M x 16	256M x 16	256M x 16	256M x 16	256M x 16	256M x 16
Supply Voltage	1.35V	1.35V	1.35V	1.35V	1.35V	1.35V	1.35V
RoHS Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Speed Grade	H9A (1866 Mbps)	H9A (1866 Mbps)	H9I (1600 Mbps)	H9J (1333 Mbps)	BYK0 (1866 Mbps)	-125 (1600 Mbps)	-125 (1600 Mbps)
Data Rate	1866 Mbps	1866 Mbps	1600 Mbps	1333 Mbps	1866 Mbps	1600 Mbps	1600 Mbps

Key Differentiators

Low power consumption (vs K4B4G1646E-BYK0)
High speed grade (vs MT41K256M16HA-125)
Same-brand availability (vs IS43TR16256AL-125KBL)

Design Notes

Ensure stable 1.35V supply for VDD and VDDQ. Use low-ESR decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each power pin to minimize noise. The tolerance is +0.100V / -0.067V, so a well-regulated supply is critical. Consider using a dedicated DDR3L power solution to maintain voltage accuracy under load transients.

For high-speed DDR3L signals, maintain controlled impedance (typically 50 ohms single-ended, 100 ohms differential) and keep trace lengths matched within 50 mils. Place the device close to the controller to minimize stub effects. Use ground planes to provide a return path and reduce EMI. Follow the layout guidelines in the SK hynix datasheet for optimal signal integrity.

The H5TC4G63CFR-H9A in a 96-ball TFBGA package has a thermal resistance that depends on PCB design. Ensure adequate thermal vias and copper pour under the package to dissipate heat. The device's low 1.35V operation reduces power dissipation, but in high-density systems, monitor junction temperature to stay within the specified operating range.