IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon
MPN: IAUT165N08S5N029ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.75 | $37.50 |
| 100 | $3.05 | $305.00 |
| 500 | $2.65 | $1,325.00 |
| 1,000 | $2.3 | $2,300.00 |
IAUT165N08S5N029ATMA2 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to efficiently route or block current in power-conversion circuits. Power MOSFETs sit within the broader hierarchy of discrete semiconductors, below IGBTs and thyristors, and are the workhorse of low-to-medium-voltage (< 250 V) switching applications. N-channel enhancement-mode MOSFETs like the IAUT165N08S5N029 are particularly common in high-current, low-side or high-side (with charge pump) switching positions because their lower R<sub>DS(on)</sub> per unit silicon area makes them more efficient than equivalent P-channel parts.
Key features of the IAUT165N08S5N029ATMA2 include a maximum pulsed drain current of 660 A, an avalanche energy rating of 225 mJ, and an operating junction temperature up to 175 °C. The combination of 2.9 mΩ R<sub>DS(on)</sub> and 80 V drain-source breakdown voltage places this part squarely in the 48 V automotive / mild-hybrid, battery-isolation, and high-current synchronous-rectification sweet spot. OptiMOS™ 5 trench technology minimises gate charge (Q<sub>G</sub>) and output capacitance (C<sub>oss</sub>) for fast switching and reduced driver losses.
Typical applications include 48 V eMobility power stages, high-current DC-DC converters, battery management systems (BMS) protection, motor drives for electric power steering (EPS) and water/oil pumps, and OR-ing / hot-swap controllers. Its low R<sub>DS(on)</sub> also makes it suitable for high-current synchronous rectification in telecom and server point-of-load converters. Design-in must respect the HSOF exposed-pad thermal path; without sufficient PCB copper, the 167 W Tc rating cannot be realised at realistic ambient temperatures.
Drop-in alternatives for IAUT165N08S5N029ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUT165N08S5N029ATMA2 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Transistor Type, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
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✅ Drop-In📋 Reference alternative (not in catalog)
SiR680DP
✅ Drop-In📋 Reference alternative (not in catalog)
IAUT165N08S5N029ATMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IAUT165N08S5N029ATMA2 |
| Product Family | OptiMOS™ 5 |
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 165 A |
| Pulsed Drain Current (I<sub>DM</sub>) | 660 A |
| On-Resistance (R<sub>DS(on)</sub>) | 2.9 mΩ (typical) |
| Power Dissipation (P<sub>D</sub>, Tc) | 167 W |
| Avalanche Energy (E<sub>AS</sub>) | 225 mJ |
| Operating Temperature Range | -55 °C to +175 °C (T<sub>j</sub>) |
| Package / Case | PG-HSOF-8-1 (8+Tab, Surface Mount) |
| Mounting Type | Surface Mount |
| MSL Rating | MSL1 (up to 260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 Qualified |
| RoHS Compliance | Green Product (RoHS compliant) |
| Avalanche Tested | 100% Avalanche Tested |
IAUT165N08S5N029ATMA2 Pin Configuration
| Pin 1 | Gate — Gate drive input (0-10 V drive recommended) |
| Pin 2 | Source — Source connection (low-side return path) |
| Pin 3 | Source — Source connection (low-side return path) |
| Pin 4 | Source — Source connection (low-side return path) |
| Pin 5 | Drain — Drain connection (also bonded to exposed tab) |
| Pin 6 | Drain — Drain connection (also bonded to exposed tab) |
| Pin 7 | Drain — Drain connection (also bonded to exposed tab) |
| Pin 8 | Drain — Drain connection (also bonded to exposed tab) |
| Pin Tab | Drain (Exposed Pad) — Drain tab for thermal dissipation and electrical connection |
Safe Operating Area - IAUT165N08S5N029ATMA2
Typical Applications
IAUT165N08S5N029ATMA2 is suitable for 6 applications: 48 V Mild-Hybrid eMobility Power Stages, Battery Management System (BMS) Protection, High-Current Synchronous Rectification, Electric Power Steering (EPS) Motor Drive, Hot-Swap / OR-ing Controllers, Industrial Brushless DC (BLDC) Motor Drives.
48 V Mild-Hybrid eMobility Power Stages
The IAUT165N08S5N029ATMA2's 80 V V<sub>DS</sub> rating provides generous transient headroom above the 48 V nominal bus, while its 2.9 mΩ typical R<sub>DS(on)</sub> and 165 A continuous drain current suit the high-current half-bridge and full-bridge stages found in 48 V mild-hybrid belt-driven starter generators (BSG) and integrated starter generators (ISG). At 165 A continuous, conduction loss is roughly 84 W per device, which the PG-HSOF-8-1 package can dissipate given adequate PCB copper. The AEC-Q101 qualification allows direct deployment in safety-relevant automotive power paths. Compared with a 100 V part, the 80 V rating delivers lower R<sub>DS(on)</sub> for the same die area, improving converter efficiency by 1–2 percentage points. Use a gate driver with 10 V drive and place the gate resistor close to the device to control switching losses.
Recommended
Battery Management System (BMS) Protection
In 12 V, 24 V and 48 V battery-pack protection circuits, the IAUT165N08S5N029ATMA2 serves as a low-side disconnect switch that isolates the pack on fault events. Its 660 A pulsed drain current rating handles inrush transients during capacitor charging, while the 225 mJ avalanche rating (E<sub>AS</sub>) ensures survival if the load is disconnected while current is flowing. The 2.9 mΩ on-resistance minimises steady-state voltage drop and self-heating when carrying continuous 100–150 A battery currents. The Green-Product RoHS compliance and MSL1 rating simplify automotive qualification paperwork. Place the device with the drain tab on a 2 oz copper pour of at least 200 mm² to keep junction temperature rise below 50 °C at full load.
Recommended
High-Current Synchronous Rectification
When used as the synchronous-rectifier switch in a 48 V buck or boost converter, the IAUT165N08S5N029ATMA2's low 2.9 mΩ R<sub>DS(on)</sub> replaces Schottky diodes and reduces rectifier conduction loss by 50–70%. At 100 A output current, the MOSFET dissipates around 29 W versus ~80 W for an equivalent Schottky, easing thermal design significantly. The OptiMOS™ 5 process delivers low Q<sub>G</sub> and C<sub>oss</sub>, enabling switching frequencies of 100–250 kHz without driver-induced losses becoming dominant. The PG-HSOF-8-1 package's exposed tab provides a low-thermal-impedance path to the PCB copper, critical for sustained high-current operation. This makes the part particularly attractive for 48 V point-of-load converters in mild-hybrid and telecom applications.
Recommended
Electric Power Steering (EPS) Motor Drive
Electric power steering racks draw up to 80–120 A peak from a 12 V or 48 V bus during parking manoeuvres. The IAUT165N08S5N029ATMA2, with its 80 V V<sub>DS</sub> rating, AEC-Q101 qualification, and 165 A continuous current, fits comfortably in the three-phase inverter for the EPS motor. At 80 A RMS, conduction loss in each FET is roughly 19 W, well within the 167 W package rating when the PCB copper area is sized to 100 °C/W or better. The 100 % avalanche-tested rating is an additional safety margin for the regenerative-braking phase of the steering motor. The -55 °C to +175 °C operating temperature range covers under-the-hood ambient conditions.
Recommended
Hot-Swap / OR-ing Controllers
In server and telecom -48 V OR-ing and hot-swap applications, the IAUT165N08S5N029ATMA2 serves as the high-current switch that connects a redundant supply to the bus. The 80 V V<sub>DS</sub> rating safely holds off the -48 V rail with margin for transients. The 2.9 mΩ R<sub>DS(on)</sub> keeps steady-state dissipation low at full load; at 60 A forward current the part dissipates ~10 W, manageable with modest copper area. The 660 A pulsed drain current capability allows hot-swap controllers to detect and limit inrush without nuisance tripping. The AEC-Q101 rating provides additional reliability margin compared with industrial-only OR-ing FETs.
Recommended
Industrial Brushless DC (BLDC) Motor Drives
Industrial BLDC motor drives in the 24 V to 48 V class, such as conveyor systems, AGVs, and robotic actuators, use three-phase inverters built from low-R<sub>DS(on)</sub> N-channel MOSFETs. The IAUT165N08S5N029ATMA2's 165 A continuous current and 2.9 mΩ R<sub>DS(on)</sub> deliver enough headroom for 30–50 A RMS industrial motor current. Its PG-HSOF-8-1 package simplifies the inverter PCB by combining high current handling with surface-mount assembly, eliminating the through-hole heatsink mounting typical of TO-220 designs. The 175 °C maximum junction temperature allows the inverter to operate in enclosed industrial cabinets with limited airflow. Use a bootstrap-capable gate driver such as the IRS2304SPBF family for the high-side positions.
Recommended
Recommended Products Summary
Engineering reference data for IAUT165N08S5N029ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN08S7L033ATMA1 | ISC151N08NM6ATMA1 | IPB100N04S4H2ATMA1 | NVMFS5C460NL | SiR680DP |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-HSOF-8-1 | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | SO-8FL (pin-compatible footprint) | PowerPAK SO-8 (pin-compatible footprint) |
| V<sub>DS</sub> (max) | 80 V | 80 V | 80 V | 40 V | 80 V | 80 V |
| R<sub>DS(on)</sub> (typ) | 2.9 mΩ | 3.3 mΩ (+13.8%) | 3.0 mΩ (+3.4%) | 1.0 mΩ (-65%) | 4.6 mΩ (+58.6%) | 3.5 mΩ (+20.7%) |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
| Technology Generation | OptiMOS 5 | OptiMOS 7 (newer) | OptiMOS 5 (same) | OptiMOS 5 | onsemi Shielded-Gate | Vishay TrenchFET Gen V |
| Approx. Unit Price (qty 1) | USD 4.20 | USD 4.50 (est., newer gen) | USD 4.10 (est.) | USD 3.80 (est.) | USD 1.20 (lower-grade, broader supply) | USD 1.80 |
Key Differentiators
- Lowest R<sub>DS(on)</sub> in the OptiMOS 5 HSOF-8 family (vs IAUCN08S7L033ATMA1)
- Pin-compatible cross-brand alternative available (vs NVMFS5C460NL (onsemi))
- Automotive-grade OptiMOS 5 reliability (vs SiR680DP (Vishay))
Design Notes
Estimated: at 165 A continuous drain current and 2.9 mΩ R<sub>DS(on)</sub>, conduction loss is approximately P = I² × R = 165² × 0.0029 = 78.9 W. With a 50 °C/W thermal resistance (achievable with 4 oz copper and 200 mm² drain-tab copper area), the junction temperature rise above ambient is around 50 K. Without sufficient PCB copper the part will thermally limit well below its 165 A rating. Always consult the datasheet SOA curves for your specific pulse profile.
The PG-HSOF-8-1 package's exposed tab is the primary drain connection and the primary thermal path. Stitch the source pins (2-4) and drain pins (5-8) with multiple vias to inner copper planes. Place the gate driver within 5 mm of the gate pin and use a 4.7-22 Ω gate resistor to control the 660 A pulsed current rise time. Avoid running the gate trace near the drain tab to minimise C<sub>gd</sub>-induced Miller coupling.
Do not assume the 80 V V<sub>DS</sub> rating is continuous in switching applications; inductive load switching transients can exceed this, so an RC snubber or TVS clamp is recommended for high-dV/dt nodes. The device is fully avalanche-rated at 225 mJ E<sub>AS</sub>, but repetitive avalanche events degrade the part. For high-current motor-drive applications, always confirm bidirectional TVS protection across the drain-source path.
Compliance Information
Infineon designates the part as a Green Product (RoHS compliant) with MSL1 rating up to 260°C peak reflow. AEC-Q101 automotive qualified (note: AEC-Q101 for discrete semiconductors, not AEC-Q100 which is for ICs).
