IPP60R099C7 - 600V 99mOhm 22A CoolMOS C7 MOSFET | Infineon
MPN: IPP60R099C7 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.88 | $28.80 |
| 100 | $2.45 | $245.00 |
| 500 | $2.1 | $1,050.00 |
| 1,000 | $1.85 | $1,850.00 |
Drop-in alternatives for IPP60R099C7 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPP60R099C6
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IPP60R125C7
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IPP60R190C7
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
STW20NM60ND
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IPP60R099C7 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID @ 25C) | 22 A |
| On-State Resistance (RDS(on) max @ VGS=10V) | 99 mOhm |
| Technology | CoolMOS C7 superjunction |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V |
| Maximum Gate-Source Voltage | +/-20 V |
| Avalanche Energy (EAS) | 97 mJ |
| Input Capacitance (Ciss) | 1.819 nF |
| Operating Junction Temperature | -55C to +150C |
| Package | TO-220 (PG-TO220-3) |
| Mounting Type | Through Hole |
| Configuration | Single MOSFET |
| Turn-off Losses | ~50% lower than CoolMOS CP series (Eoss) |
| RoHS Status | Compliant |
| Typical Applications | PFC, LLC, SMPS |
IPP60R099C7 Pin Configuration
| Pin 1 | Gate β Gate control terminal; drive via 5-10 Ohm resistor |
| Pin 2 | Drain β Drain terminal, electrically connected to mounting tab |
| Pin 3 | Source β Source terminal, kelvin reference for gate drive return |
Safe Operating Area
Typical Applications
IPP60R099C7 is suitable for 6 applications: PFC Stage in Server/Telecom Power Supplies, LLC Resonant Converter, Solar String Inverters, EV Charging Stations, Industrial SMPS / AC-DC Power Supplies, Motor Drives and Inverters.
PFC Stage in Server/Telecom Power Supplies
The IPP60R099C7 fits CCM boost PFC stages because its 99 mOhm RDS(on) minimizes conduction loss at sustained high inductor currents, while the C7 generation's ~50% lower Eoss versus CoolMOS CP cuts turn-off switching loss in hard-switched boost operation. Placed as the boost switch in a 400 V output PFC front end driven at 65-140 kHz, it improves overall power-supply efficiency by one to two percentage points. Pair with a low-side gate driver and 5-10 Ohm gate resistor.
Recommended
LLC Resonant Converter
In LLC half-bridge and full-bridge topologies for server and telecom power, the IPP60R099C7 provides low conduction loss at the primary side while its superjunction capacitance profile supports soft-switching (ZVS) at 100 kHz+ resonant frequencies. The fast body diode reduces reverse-recovery related stress during dead-time transitions. Its TO-220 package simplifies prototyping and heatsinking. Pair with an isolated half-bridge driver with adjustable dead-time to guarantee ZVS across load range.
Recommended
Solar String Inverters
Grid-tied solar inverters use 600 V superjunction MOSFETs in the DC-AC H-bridge and boost stages. The IPP60R099C7's low 99 mOhm RDS(on) reduces conduction losses during high-irradiance operation, and its 97 mJ avalanche rating adds robustness against voltage transients from the DC link and line side. Its 600 V rating suits 400 V-class DC bus architectures common in residential and commercial string inverters. Adequate heatsinking and gate damping resistors are essential to control ringing.
Recommended
EV Charging Stations
AC-DC rectifier and PFC front ends in EVSE and fast-charger power modules use 600 V superjunction MOSFETs at multi-kilowatt levels. The IPP60R099C7 handles 22 A continuous, and multiple devices can be paralleled thanks to the superjunction technology's stable RDS(on) versus temperature behavior. The ~50% Eoss reduction versus CoolMOS CP directly improves charging-module efficiency, reducing cooling requirements. Combine with a CCM PFC controller and robust isolated drivers.
Recommended
Industrial SMPS / AC-DC Power Supplies
General-purpose industrial switched-mode power supplies (flyback, forward, half-bridge) in the 300 W-3 kW range benefit from the IPP60R099C7's balance of 600 V blocking, 99 mOhm conduction, and low switching losses. The through-hole TO-220 package simplifies assembly and field service in industrial builds, and the -55C to +150C junction range supports harsh factory environments. Use a 5-10 Ohm gate resistor to tame superjunction switching ringing and prevent spurious turn-on.
Recommended
Motor Drives and Inverters
Small industrial motor drives and DC servo inverters use 600 V MOSFETs in three-phase bridge configurations. The IPP60R099C7's low RDS(on) lowers conduction heating at high torque/current, while the fast intrinsic body diode manages freewheeling currents between PWM commutations. Its avalanche robustness (97 mJ EAS) provides margin against inductive kick from motor windings and wiring. Isolated gate drivers with Miller clamp and desaturation protection are recommended for reliability.
Recommended
Recommended Products Summary
Engineering reference data for IPP60R099C7 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP60R099C6 | IPP60R125C7 | STW20NM60ND | STF25NM60ND |
|---|---|---|---|---|---|
| Package | TO-220 (PG-TO220-3) | TO-220 - same | TO-220 - same | TO-220 - same | TO-220FP (different mounting) |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | STMicroelectronics |
| Drain-Source Voltage | 600 V | 600 V | 600 V | 600 V | 600 V |
| RDS(on) max | 99 mOhm | 99 mOhm | 125 mOhm | [DATA_NEEDED] | [DATA_NEEDED] |
| Continuous Drain Current @ 25C | 22 A | [DATA_NEEDED] | [DATA_NEEDED] | 20 A | 25 A |
| Generation / Technology | CoolMOS C7 superjunction | CoolMOS C6 | CoolMOS C7 | MDmesh M2 | MDmesh M2 |
| Package Match | TO-220 through-hole | Pin-to-pin drop-in | Pin-to-pin drop-in | Pin-to-pin drop-in | TO-220FP - requires mounting review |
| Relative Turn-off Losses | Baseline (C7, ~50% lower than CP) | Higher (C6 generation) | Similar C7, smaller die | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Latest-generation switching losses (vs IPP60R099C6)
- Lower conduction loss than 125 mOhm variant (vs IPP60R125C7)
- Standard TO-220 footprint vs isolated TO-220FP (vs STF25NM60ND)
Design Notes
Gate drive layout: place the gate driver as close as possible to the gate pin and use a 5-10 Ohm series gate resistor (split into an external Rg plus a few Ohms internal dampening) to control superjunction switching ringing and prevent parasitic dv/dt turn-on. Keep the gate loop area minimal and route the source return separately from the power loop.
In a TO-220 without heatsink, free-air dissipation is limited to roughly 2-3 W. For PFC/LLC duty at 15 A+ or above 100 kHz, mount to a heatsink with thermal interface material; keep junction temperature below 150C with margin (target under 110C). Estimate losses as I_rms^2 x RDS(on) at operating temperature plus Eoss x fsw plus output-charge related loss.
Superjunction MOSFETs exhibit steep capacitance nonlinearity versus VDS; do not extrapolate Eoss/Qoss values from low-voltage measurements. Also, the low internal gate resistance means dv/dt immunity depends heavily on external gate impedance - avoid undersized gate pull-down during off-state. Confirm gate-charge and Eoss figures in the official Infineon datasheet rather than relying on family-level estimates.
Compliance Information
RoHS compliant per Infineon product page; industrial grade, not AEC-Q100 qualified. Automotive use requires express written approval per datasheet.
