IPT019N08N5ATMA1 - 80V, 1.9mOhm OptiMOS 5 N-MOSFET | Infineon
MPN: IPT019N08N5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.08 | $30.80 |
| 100 | $2.74 | $274.00 |
| 500 | $2.41 | $1,205.00 |
| 1,000 | $2.13 | $2,130.00 |
| 3,000 | $1.86 | $5,580.00 |
IPT019N08N5ATMA1 Overview
What is an N-channel power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to commutate high currents at high frequencies. N-channel enhancement-mode MOSFETs such as this one conduct when a positive gate-source voltage is applied, and they are the dominant choice for low-side and high-side switching because their higher electron mobility yields lower RDS(on) per unit silicon area than equivalent P-channel devices. Within the broader taxonomy, the IPT019N08N5ATMA1 belongs to the discrete semiconductor power MOSFET family, which itself is a subset of the MOSFET -> transistor -> semiconductor hierarchy.
Key features include an avalanche-rated single-PKU die, low gate charge (Qg) for reduced driver losses, an integrated monolithic body diode optimized for third-quadrant operation, and a 100% UIL-tested production flow. The TOLL package is leadless, provides an exposed top-side cooling surface, and supports a typical power dissipation rating of 231 W at Tc, enabling compact high-current-density PCB layouts.
The OptiMOS 5 technology combines a stripe-cell trench gate structure with a low-resistance substrate, producing a figure-of-merit (FOM = RDS(on) x Qg) that is among the lowest in the 80V MOSFET class. This translates directly into cooler operation, smaller magnetics in switching converters, and higher power density at the system level.
Typical applications include telecom 48V power supplies, server and data-center synchronous rectification stages, industrial SMPS half-bridges, solar inverters, low-voltage motor drives, and high-current battery protection circuits in e-mobility. The wide safe-operating area (SOA) and proven body-diode ruggedness also make it well-suited for OR-ing and hot-swap controllers.
When designing with this device, observe the SOA limits, especially at high VDS and DC operation, and minimize parasitic source-inductance to unlock the full switching speed of the OptiMOS 5 cell. Thermal design must assume worst-case Tj max of 175 C and derate accordingly.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not collected in the manufacturer datasheet alone.
Drop-in alternatives for IPT019N08N5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPT019N08N5ATMA1 (same form factor and footprint) — differing in MSL Level, Operating Temperature Range, Package, Technology, Qualification.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPT015N08N5ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPT025N08N5ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUC120N04S6N010ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.68 / Unit
View Datasheet →IAUCN08S7L033ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.86 / Unit
View Datasheet →IPT019N08N5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 80V |
| Polarity / Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS max) | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 247 A |
| Continuous Drain Current (ID, Ta=25C) | 32 A |
| On-Resistance (RDS(on) max @ VGS=10V) | 1.9 mOhm |
| Power Dissipation (PD, Tc=25C) | 231 W |
| Package | PG-HSOF-8-1 (TOLL) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C |
| Technology | OptiMOS 5 (stripe-cell trench) |
| Body Diode | Monolithic, third-quadrant optimized |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Qualification | Industrial grade (AEC-Q101 variant available separately) |
| Packing | Tape & Reel (TMA1 suffix) |
IPT019N08N5ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (low-side power return) |
| Pin 2 | Source — Source connection (low-side power return) |
| Pin 3 | Source — Source connection (low-side power return) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection (low-side power return) |
| Pin 6 | Source — Source connection (low-side power return) |
| Pin 7 | Source — Source connection (low-side power return) |
| Pin 8 | Drain — Drain connection (high-side power input) |
Safe Operating Area (DC)
Typical Applications
IPT019N08N5ATMA1 is suitable for 7 applications: Telecom 48V Hot-Swap Controller, Server / Data-Center 48V Synchronous Rectification, Industrial SMPS Half-Bridge, Solar Inverter DC-DC Boost Stage, Low-Voltage Motor Drive (24-72V BLDC/PMSM), Battery Protection / OR-ing in E-Mobility, Hot-Swap / E-Fuse for 48V Distribution.
Telecom 48V Hot-Swap Controller
The IPT019N08N5ATMA1's 80V VDS rating provides 32V headroom above the nominal 48V telecom bus, comfortably absorbing transient spikes from input fuse clearing and hot-plug events. Its 1.9 mOhm RDS(on) at VGS=10V limits steady-state conduction loss to roughly 14W at 100A load, while the TOLL package's exposed top-side thermal pad conducts heat directly to a heatsink or spreader, allowing continuous operation without PCB copper-only cooling. The monolithic body diode supports reverse-current blocking during plug-in sequencing. Compared with older 80V MOSFET generations in D2PAK, the TOLL footprint shrinks the hot-swap footprint by ~40% while delivering lower thermal resistance.
Recommended
Server / Data-Center 48V Synchronous Rectification
In a 48V-to-12V or 48V-to-1V intermediate bus converter, the IPT019N08N5ATMA1 serves as the synchronous rectifier MOSFET on the secondary side, replacing Schottky diodes and reclaiming 2-3% efficiency. The 1.9 mOhm RDS(on) keeps secondary-side conduction loss under 5W per switch at 50A, while the low Qg of the OptiMOS 5 cell minimizes dead-time and circulating-current losses at 100-300 kHz switching frequencies. The 247A continuous rating accommodates peak transient loads without thermal throttling, and the -55C to +175C junction range covers cold-aisle to hot-aisle server environments. The TOLL footprint is compatible with direct-attached cold-plate cooling in 1U and 2U server chassis.
Recommended
Industrial SMPS Half-Bridge
The IPT019N08N5ATMA1 forms one half of the primary-side switch pair in an industrial 24-72V input SMPS delivering 1-5 kW output. Its 80V breakdown supports continuous operation up to 72V nominal input with 10% over-voltage margin, while the 1.9 mOhm RDS(on) yields >98% efficiency at full load in a 3 kW hard-switched half-bridge. The low Qgd/Qgs ratio of OptiMOS 5 minimizes cross-conduction losses, and the rugged monolithic body diode tolerates hard commutation without external snubbers in most designs. The TOLL package's top-side thermal interface allows direct mounting to a chassis wall or cold plate, simplifying mechanical integration in industrial enclosures.
Recommended
Solar Inverter DC-DC Boost Stage
In a photovoltaic boost converter that steps a 30-60V PV string up to a 70V DC bus, the IPT019N08N5ATMA1's 80V rating provides 10V safety margin across the full input range while keeping switching frequency losses low. The 1.9 mOhm RDS(on) supports continuous conduction at 80-100A peak power from a 3 kW residential inverter, and the avalanche-rated single-die construction absorbs inductive kickback from the boost inductor without external TVS protection in most designs. The TOLL footprint reduces inverter PCB area by approximately 30% versus D2PAK-based designs, allowing higher power density in string inverter enclosures.
Recommended
Low-Voltage Motor Drive (24-72V BLDC/PMSM)
For 24V, 36V, and 48V battery-powered BLDC or PMSM motor drives, the IPT019N08N5ATMA1 delivers the current-handling and switching-speed combination required for 5-15 kW traction or pump drives. The 247A continuous rating supports peak motor currents well above 100A, and the 1.9 mOhm RDS(on) keeps I²R losses under 2% of mechanical output power at typical operating points. The low gate charge of OptiMOS 5 enables 20-50 kHz PWM with negligible dead-time, reducing torque ripple and audible noise. The TOLL package's top-side cooling path simplifies integration with motor housing thermal planes.
Recommended
Battery Protection / OR-ing in E-Mobility
In e-mobility battery management and OR-ing applications, the IPT019N08N5ATMA1 serves as a high-current disconnect switch or ideal-diode OR-ing FET between parallel battery packs. The 1.9 mOhm RDS(on) reduces continuous conduction loss to under 2W at 30A, while the 247A rating covers peak discharge pulses. The 80V VDS provides headroom above 48V battery stacks including transient over-voltage during regen braking events. The monolithic body diode provides a default current path during FET turn-off, and the TOLL package's compact footprint supports integration into space-constrained battery enclosures.
Recommended
Hot-Swap / E-Fuse for 48V Distribution
The IPT019N08N5ATMA1 functions as the main pass-MOSFET in a 48V distributed-power e-fuse or hot-swap controller. Its 80V VDS comfortably absorbs the ringing from input bus inductance during plug-in events, while the 1.9 mOhm RDS(on) keeps steady-state voltage drop below 200 mV at 100A. The 247A rating supports continuous operation above the typical 80-120A blade-server current envelope without thermal limiting. The avalanche energy rating of the OptiMOS 5 die provides intrinsic protection during load dump events, and the TOLL package's top-side cooling allows direct mounting to the bus-bar heatsink.
Recommended
Recommended Products Summary
Engineering reference data for IPT019N08N5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPT015N08N5ATMA1 | IPT025N08N5ATMA1 | IAUC120N04S6N010ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|---|---|---|
| Package | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS max | 80 V | 80 V | 80 V | 40 V | 80 V |
| RDS(on) max @ 10V | 1.9 mOhm | 1.5 mOhm | 2.5 mOhm | 1.0 mOhm | 0.33 mOhm |
| Continuous ID (Tc) | 247 A | 300 A (higher class) | 200 A | 120 A | 300 A (higher class) |
| Technology | OptiMOS 5 80V | OptiMOS 5 80V | OptiMOS 5 80V | OptiMOS 5 40V | OptiMOS 5 80V |
| Power Dissipation (Tc=25C) | 231 W | 250 W (est.) | 200 W (est.) | 167 W | 278 W (est.) |
| Param Match | 100 (reference) | 90 (same VDS, lower RDS(on)) | 90 (same VDS, higher RDS(on)) | 70 (40V class - voltage downgrade) | 90 (same VDS, much lower RDS(on)) |
Key Differentiators
- Industry-leading 1.9 mOhm RDS(on) in TOLL package for 80V class (vs BSC019N08NS5ATMA1 (SuperSO8))
- 247A continuous drain current in compact TOLL footprint (vs IPT025N08N5ATMA1 (higher RDS(on) class))
- OptiMOS 5 stripe-cell technology with monolithic body diode (vs Older OptiMOS 3 IPT015N08N3 (D2PAK))
Design Notes
Estimated: at 100A continuous drain current and 1.9 mOhm RDS(on) (this part max), conduction loss is approximately P = I² x R = 100² x 0.0019 = 19W. At 175C junction limit and ambient 70C, the allowable thermal resistance theta_JA is (175-70)/19 = 5.5 C/W. The TOLL package must be mounted to a heatsink or chassis thermal plane with thermal interface material to achieve this; PCB copper-only cooling is typically insufficient above 50A continuous.
Use the Infineon-recommended land pattern for PG-HSOF-8-1 (TOLL) to ensure reliable solder joint formation and minimize source-inductance. Keep the high-current source copper plane continuous and unbroken from the FET source pins to the load return path. The drain tab on the top side should be bonded to a copper spreader or heatsink using a thermally-conductive adhesive or solder for maximum thermal performance.
Gate-drive loop area (gate-driver output -> gate-pin -> source-pin -> driver ground return) MUST be minimized to avoid parasitic inductance that causes gate-oscillation, dv/dt-induced turn-on, and excessive ringing. Place the gate-driver IC within 5mm of the FET gate pin. Use a Kelvin-source connection (separate source-sense trace to the driver ground) when the FET source current exceeds 50A, to prevent source-inductance from degenerating the gate-drive voltage.
Do not assume the monolithic body diode can substitute for an external SiC Schottky in high-frequency bridge topologies - while OptiMOS 5's body diode is third-quadrant optimized, its reverse-recovery charge still causes additional switching loss above 50 kHz. For hard-switched bridges above 100 kHz, add a co-pack SiC Schottky or use a zero-voltage-switching topology. Also, never exceed VGS = +/-20V absolute maximum; gate-drive transients above this will permanently damage the gate oxide.
In parallel-FET configurations, gate-source resistors (typically 10-100 ohm) MUST be placed close to each individual FET's gate pin to dampen parasitic oscillation between the paralleled gate capacitances. Without these resistors, the parallel pair can exhibit sustained 100+ MHz oscillation during switching transitions, causing both EMI failures and accelerated device wear. Match the gate-drive loop lengths between paralleled FETs to within 2mm to ensure symmetric switching.
Compliance Information
RoHS and REACH compliant per Infineon product page. Standard industrial grade (not AEC-Q100 qualified); for automotive grade, contact Infineon for the IAUCN08S7L033ATMA1 or similar AEC-Q100-qualified variant. MSL Level 1 per JEDEC J-STD-020.
