IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon
MPN: IPZ40N04S53R1ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.93 | $93.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.66 | $660.00 |
| 3,000 | $0.55 | $1,650.00 |
IPZ40N04S53R1ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between drain and source. MOSFETs sit within the broader taxonomy of discrete semiconductors (transistor -> FET -> MOSFET -> power MOSFET -> OptiMOS family) and are the workhorse of modern DC-DC conversion, motor drive and hot-swap circuits because of their high switching speed, low conduction loss and easy gate drive.
The defining features of this part are its ultra-low 3.1 mOhm on-resistance at 10 V, AEC-Q101 automotive qualification with MSL1 robustness to 260 C peak reflow, 100 % avalanche-tested silicon, and the compact thermally-enhanced PG-TSDSON-8 (5x6 mm) package with exposed pad. Drive is specified at 7 V (max R_DS on) and 10 V (min R_DS on), with a maximum VGS of +/-20 V. These characteristics give engineers a high-current, low-loss switch that fits on small PCBs in space-constrained automotive environments.
The OptiMOS 5 cell platform reduces Figure of Merit (R_DS(on) x Qg) versus the prior OptiMOS 3 generation, enabling higher switching frequencies with smaller magnetics in buck or boost converters. The PG-TSDSON-8 exposed pad slashes thermal resistance, supporting the 71 W power budget at moderate copper pours and allowing 40 A operation in confined spaces.
Typical applications include 12 V and 24 V automotive ECUs, electric power steering, braking and chassis systems, brushed and brushless DC motor drivers, high-current synchronous rectification, battery management protection FETs, and USB-PD / e-fuse hot-swap front ends.
When designing with this part, keep the gate drive loop tight (low-inductance gate-source return) to avoid ringing at the 20 V VGS absolute maximum, and provide sufficient copper pour on the exposed pad to keep junction temperature below the 175 C limit during 100 % avalanche events.
This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives and practical layout guidance not collected in any single Infineon document.
Drop-in alternatives for IPZ40N04S53R1ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPZ40N04S53R1ATMA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Drain-Source Voltage (VDS), Technology, Qualification.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPZ40N04S5L-3R1
✅ Drop-In📋 Reference alternative (not in catalog)
IPZ40N04S5-3R1
✅ Drop-In📋 Reference alternative (not in catalog)
ISC0805NLSATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →BSC034N06NSATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →BSC0902NSATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →ISC011N06LM5ATMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →IPZ40N04S53R1ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (V_DSS) | 40 V |
| Continuous Drain Current (I_D) at Tc=25 C | 40 A |
| Power Dissipation (P_D) at Tc=25 C | 71 W |
| R_DS(on) max at V_GS=10 V, I_D=20 A | 3.1 mOhm |
| Drive Voltage (Max R_DS on, Min R_DS on) | 7 V, 10 V |
| Maximum V_GS | +/-20 V |
| Operating Temperature Range | -55 C to +175 C |
| Package | PG-TSDSON-8 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (260 C peak reflow) |
| Qualification | AEC-Q101 automotive |
| Avalanche Tested | 100 % |
| RoHS Compliance | Compliant (Green Product) |
| Series | OptiMOS 5 (IPZ family) |
IPZ40N04S53R1ATMA1 Pin Configuration
| Pin 1 | S (Source) — Source connection, internally connected to pins 2, 3, 5, 6, 7 and the exposed pad |
| Pin 2 | S (Source) — Source connection |
| Pin 3 | S (Source) — Source connection |
| Pin 4 | G (Gate) — Gate drive input - drive between 7 V (max R_DS on) and 10 V (min R_DS on) |
| Pin 5 | S (Source) — Source connection |
| Pin 6 | S (Source) — Source connection |
| Pin 7 | S (Source) — Source connection |
| Pin 8 | D (Drain) / EP — Drain connection on top, exposed thermal pad on bottom for heat dissipation |
Safe Operating Area - IPZ40N04S53R1ATMA1
Typical Applications
IPZ40N04S53R1ATMA1 is suitable for 6 applications: 12 V Automotive ECU Load Switch, Electric Power Steering Motor Drive, Brushed DC Motor Driver (H-Bridge), Synchronous Rectifier in 12 V Buck Converter, Battery Management Protection FET, USB-PD / High-Current Hot-Swap Front End.
12 V Automotive ECU Load Switch
The IPZ40N04S53R1ATMA1 is well-suited to 12 V automotive ECU load switching thanks to its 40 V V_DSS rating that survives 24 V jump-start and ISO 7637-2 load-dump transients with comfortable margin, and its 40 A continuous drain current handles high-current ECU rails with low 3.1 mOhm conduction loss. Placed between the battery feed and the ECU power input with a 10 V gate drive, it dissipates only 1.2 W at 20 A load (vs 8 W for a 20 mOhm part) - reducing junction temperature rise and improving fuel-economy-sensitive standby current. AEC-Q101 qualification removes the need for additional automotive stress testing.
Recommended
Electric Power Steering Motor Drive
The IPZ40N04S53R1ATMA1 serves as the high-side/low-side switch in electric power steering half-bridges where its 40 V V_DSS and 71 W power dissipation support PWM currents up to 40 A at Tc=25 C, and its 3.1 mOhm R_DS(on) keeps I^2R losses below 5 W per FET at full load. The 175 C junction rating tolerates the harsh under-hood thermal environment, while AEC-Q101 qualification satisfies OEM reliability requirements. Gate drive from a TLE9180 BLDC gate IC at 10 V ensures the part operates in its lowest R_DS(on) region throughout the steering assist duty cycle.
Recommended
Brushed DC Motor Driver (H-Bridge)
In a brushed DC motor H-bridge, the IPZ40N04S53R1ATMA1 provides four identical low-side switches whose 40 A rating exceeds typical 12 V window-lift or seat-adjust motor peaks, and whose 3.1 mOhm R_DS(on) keeps voltage drop across the bridge below 0.15 V at 50 A peak. The PG-TSDSON-8 exposed pad enables direct PCB heatsinking, while the +/-20 V V_GS rating tolerates the regenerative braking spikes that flow back through the body diode during PWM commutation. AEC-Q101 screening matches automotive door-module and seat-controller qualification profiles.
Recommended
Synchronous Rectifier in 12 V Buck Converter
The IPZ40N04S53R1ATMA1 works as the synchronous low-side FET in a 12 V-to-3.3 V/5 V buck converter where its 3.1 mOhm R_DS(on) yields >96 % efficiency at 20 A load, and its low Qg enables switching frequencies up to 500 kHz without excessive gate-drive loss. The 40 V V_DSS gives headroom for ringing above the 12 V rail during switching transients. The PG-TSDSON-8 footprint is shared by other OptiMOS 5 parts, enabling easy scalability to higher-current rails by paralleling multiple devices on the same PCB layout.
Recommended
Battery Management Protection FET
As a battery-pack protection FET in a 12 V Li-ion or LiFePO4 pack, the IPZ40N04S53R1ATMA1 provides 40 A continuous discharge rating with 3.1 mOhm on-resistance - keeping conduction loss below 1.3 W at 20 A. Its 100 % avalanche-tested silicon withstands the inductive kickback when the protection circuit interrupts a short-circuit, and AEC-Q101 compliance matches automotive 12 V battery systems used in mild-hybrid vehicles. The exposed pad of the PG-TSDSON-8 package conducts heat directly into the battery-management PCB ground plane.
Recommended
USB-PD / High-Current Hot-Swap Front End
The IPZ40N04S53R1ATMA1 functions as a hot-swap FET on a 12 V-to-20 V USB-Power-Delivery input rail where its 3.1 mOhm R_DS(on) and 40 A rating support 100 W (20 V/5 A) loads with minimal voltage drop, and its 40 V V_DSS comfortably exceeds the USB-PD extended 20 V range plus transient ringing. The exposed thermal pad of the PG-TSDSON-8 package dissipates the 7 W inrush losses during connector mating, while AEC-Q101 screening supports both automotive and industrial USB-PD applications. Gate drive from a hot-swap controller like the LTC4232 provides inrush current limiting.
Recommended
Recommended Products Summary
Engineering reference data for IPZ40N04S53R1ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPZ40N04S5L-3R1 | IPZ40N04S5-3R1 | ISC0805NLSATMA1 | BSC034N06NSATMA1 | BSC0902NSATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8 | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DSS (V) | 40 | 40 | 40 | 80 | 60 | 30 | 60 |
| R_DS(on) max (mOhm) at 10 V V_GS | 3.1 | 3.1 | 3.1 | 5.0 | 3.4 | 9.0 | 1.1 |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Max Operating Temperature (C) | 175 | 175 | 175 | 175 | 175 | 175 | 175 |
Key Differentiators
- Tightest R_DS(on) binning with 100 % avalanche screening (vs IPZ40N04S5L-3R1)
- Higher V_DSS margin in same footprint for 24 V systems (vs BSC0902NSATMA1)
- Lower conduction loss at 10 V V_GS than 60 V V_DSS alternatives (vs BSC034N06NSATMA1)
- Pin-for-pin compatibility with the IPZ40N04S5 family for design scalability (vs ISC0805NLSATMA1)
Design Notes
At 20 A continuous drain current with 3.1 mOhm R_DS(on) and 100 % duty cycle, the IPZ40N04S53R1ATMA1 dissipates approximately 1.24 W of conduction loss. Estimated: P_D = I^2 * R_DS(on) = 20^2 * 0.0031 = 1.24 W. With the PG-TSDSON-8 package theta_JA of approximately 50 C/W on a 1 oz 4-layer PCB with the exposed pad soldered to a 1 square inch copper pour, junction temperature rise above ambient is roughly 62 C. For 30 A or higher continuous loads, increase copper area or use forced-air cooling to keep Tj below the 175 C maximum rating.
Layout the PCB so the gate-drive loop (gate-driver output -> gate pin -> source pins -> gate-driver ground return) is minimized to <10 mm total loop length. Place the gate resistor and optional gate-source TVS clamp within 5 mm of pin 4. The exposed pad must be soldered to a continuous copper pour on the top and inner layers with at least 8 thermal vias (0.3 mm drill, 0.6 mm pad) to the inner ground plane to achieve the 50 C/W theta_JA quoted in the Infineon layout guidelines.
Do not drive the gate above +/-20 V V_GS - this absolute maximum rating can puncture the thin gate oxide. Always include a gate-source resistor (typically 10 kOhm) to hold the FET in a defined state during controller startup, and a gate-source TVS (e.g. 18 V SMAJ package) to absorb ringing from drain-to-gate Miller capacitance coupling during fast switching transitions. Avoid operating continuously in the linear region (V_DS > 2 V) at high current - this is outside the safe operating area and can lead to thermal runaway.
Source pins 1-3 and 5-7 are internally connected to the exposed pad. Star-ground the gate-driver return to the source pad (not to a remote system ground) to avoid source-inductance-induced gate-voltage spikes that can exceed V_GS(max). For high-frequency switching above 100 kHz, add a 1 nF ceramic bypass capacitor directly between gate and source pins to suppress RF oscillations.
Compliance Information
AEC-Q101 qualified per Infineon datasheet; RoHS compliant Green Product; MSL1 to 260 C peak reflow; 100 % avalanche tested. Note: AEC-Q101 (automotive discrete) is referenced here, while the schema field uses the generic aec_q100 key.
