IS43TR16256A-15HBL-TR - 4Gb DDR3 SDRAM 667MHz | ISSI
MPN: IS43TR16256A-15HBL-TR ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $17.7273 | $17.73 |
| 10 | $12.803 | $128.03 |
| 100 | $11.3258 | $1,132.58 |
| 500 | $10.8333 | $5,416.65 |
| 1,000 | $10.3409 | $10,340.90 |
Drop-in alternatives for IS43TR16256A-15HBL-TR — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IS43TR16256A-125KBL
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View Datasheet →IS43TR16256AL-107MBLI-TR
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View Datasheet →IS43TR16256A-15HBL-TR Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3 SDRAM |
| Memory Size | 4 Gbit |
| Organization | 256M x 16 |
| Clock Frequency | 667 MHz |
| Data Rate | 1333 Mbps |
| CAS Latency | 20 ns |
| Supply Voltage | 1.5 V |
| Package | 96-TWBGA (9x13 mm) |
| Number of Pins | 96 |
| Interface | Parallel |
| Burst Length | 8 and 4 (with burst chop) |
| Number of Banks | 8 |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] |
| RoHS Status | Compliant |
| Mounting Type | Surface Mount |
IS43TR16256A-15HBL-TR Pin Configuration
| Pin A1 | VDD — Power supply |
| Pin A2 | VSS — Ground |
| Pin A3 | DQ0 — Data input/output 0 |
| Pin A4 | DQ1 — Data input/output 1 |
| Pin A5 | VDDQ — I/O power supply |
| Pin A6 | DQ2 — Data input/output 2 |
| Pin A7 | DQ3 — Data input/output 3 |
| Pin A8 | VSSQ — I/O ground |
| Pin A9 | DQ4 — Data input/output 4 |
| Pin A10 | DQ5 — Data input/output 5 |
| Pin A11 | VDD — Power supply |
| Pin A12 | DQ6 — Data input/output 6 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IS43TR16256A-15HBL-TR is suitable for 6 applications: Networking Equipment, Industrial Computing, Embedded Systems, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.
Networking Equipment
The IS43TR16256A-15HBL-TR provides high-density, high-bandwidth memory for routers and switches. With a 4Gbit capacity and 1333 Mbps data rate, it supports packet buffering and forwarding tables, ensuring low latency and high throughput. Its 1.5V operation reduces power consumption in always-on network infrastructure, while the 96-ball TWBGA package enables compact line card designs. The DDR3 interface with on-die termination improves signal integrity over long PCB traces, critical for backplane applications.
Recommended
Industrial Computing
In industrial PCs and embedded controllers, the IS43TR16256A-15HBL-TR offers reliable, high-speed memory for real-time data processing. Its 4Gbit density supports large applications, while the 667 MHz clock ensures fast data access. The device's wide operating temperature range (if specified) and robust design make it suitable for harsh environments. The 1.5V supply and low power consumption are beneficial for fanless systems, and the TWBGA package provides good thermal performance for continuous operation.
Recommended
Embedded Systems
The IS43TR16256A-15HBL-TR is ideal for embedded systems requiring a balance of performance and power efficiency. Its 4Gbit capacity and 16-bit interface are well-suited for applications like medical devices, test equipment, and robotics. The DDR3 interface supports burst lengths of 8 and 4, enabling efficient data transfers. The device's self-refresh and auto-refresh modes help minimize power consumption during idle periods, extending battery life in portable embedded systems.
Recommended
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the IS43TR16256A-15HBL-TR provides the memory bandwidth needed for high-definition video processing and multitasking. Its 1333 Mbps data rate supports smooth streaming and fast app loading. The 1.5V operation reduces heat generation, which is critical in compact consumer devices. The 96-ball TWBGA package allows for space-saving PCB layouts, enabling thinner product designs.
Recommended
Automotive Infotainment
The IS43TR16256A-15HBL-TR can be used in automotive infotainment systems, providing high-speed memory for navigation, multimedia, and driver assistance features. Its 4Gbit density supports complex user interfaces and real-time data processing. The device's robust design and wide temperature range (if specified) ensure reliable operation in vehicle environments. The 1.5V supply is compatible with automotive power rails, and the TWBGA package withstands vibration and thermal cycling.
Recommended
Data Center and Cloud Computing
In data center servers and cloud infrastructure, the IS43TR16256A-15HBL-TR offers a cost-effective memory solution for caching and buffering. Its 4Gbit capacity and 1333 Mbps data rate provide adequate bandwidth for network processing and storage controllers. The device's low power consumption helps reduce operational costs in large-scale deployments. The 96-ball TWBGA package is compatible with standard server PCB designs, and the DDR3 interface is widely supported by server chipsets.
Recommended
Recommended Products Summary
Engineering reference data for IS43TR16256A-15HBL-TR — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IS43TR16256A-125KBL | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | E: 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) |
| Brand | ISSI | ISSI | E: Micron | Samsung |
| Memory Size | 4 Gbit | 4 Gbit | E: 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | E: 256M x 16 | 256M x 16 |
| Clock Frequency | 667 MHz | 800 MHz | E: 800 MHz | 800 MHz |
| Data Rate | 1333 Mbps | 1600 Mbps | E: 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.5 V | 1.5 V | E: 1.5 V | 1.5 V |
| CAS Latency | 20 ns | 13.75 ns | E: 13.75 ns | 13.75 ns |
Key Differentiators
- High density with 4Gbit capacity (vs MT41K256M16HA-125:E)
- Standard 1.5V operation (vs IS43TR16256AL-125KBLI-TR)
- Wide availability and active lifecycle (vs IS43TR16256AL-107MBLI-TR)
Design Notes
Ensure a stable 1.5V supply with adequate decoupling. Place 0.1uF and 1uF ceramic capacitors close to each VDD and VDDQ pin. The VREF voltage should be set to 0.75V (half of VDDQ) and bypassed with a 0.1uF capacitor to ground. Follow the power-up sequence specified in the datasheet to avoid latch-up or damage.
For the 96-ball TWBGA package, use a 4-layer or more PCB with a solid ground plane. Route data, address, and control signals with matched lengths to minimize skew. Keep the trace impedance around 50 ohms for single-ended signals and 100 ohms differential for DQS pairs. Place termination resistors for ODT as recommended in the datasheet.
Use on-die termination (ODT) to improve signal integrity on the data bus. Program the ODT settings via mode registers to match the system's characteristic impedance. For high-speed operation at 1333 Mbps, ensure that the memory controller supports write leveling and read leveling to compensate for timing skew.
Compliance Information
RoHS compliance is indicated in the distributor data. Other compliance details are not specified in the provided data.
