K3KL3L30DM-BGCU - LPDDR5X 64Gb 8533Mbps DRAM | Samsung
MPN: K3KL3L30DM-BGCU ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K3KL3L30DM-BGCU — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →K3KL3L30DM-BGCU Maximum Ratings & Electrical Characteristics
| Memory Type | LPDDR5X DRAM |
| Density | 64 Gb |
| Organization | x64 |
| Data Rate | 8533 Mbps |
| Supply Voltage (VDD1) | 1.8 V |
| Supply Voltage (VDD2) | 1.05 V |
| Supply Voltage (VDDQ) | 0.5 V |
| Core Voltage Rail | 0.9 V |
| Operating Temperature | -25 C to +85 C |
| Package | 496-ball FBGA |
| Mounting Type | Surface Mount |
| Interface | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | EOL |
| Brand | Samsung Semiconductor |
| Application Segment | Mobile, consumer electronics, embedded systems |
K3KL3L30DM-BGCU 496-ball fbga Pin Configuration Guide
Complete pinout information for K3KL3L30DM-BGCU (496-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K3KL3L30DM-BGCU.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K3KL3L30DM-BGCU is suitable for 6 applications: Flagship Smartphone Main Memory, Automotive Infotainment and Cockpit Computing, AI Edge Accelerator Memory, Premium Tablets and Laptops, 5G Infrastructure and Networking Equipment, High-Resolution Camera and Imaging Systems.
Flagship Smartphone Main Memory
The K3KL3L30DM-BGCU is designed as main system memory for flagship smartphones, where its 8533 Mbps pin speed matches the LPDDR5X memory controllers of Qualcomm Snapdragon and MediaTek Dimensity application processors. A single 64 Gb (8 GB) IC allows an 8 GB or 16 GB system configuration with only one or two devices, saving board area on densely packed mobile PCBs. Its x64 organization maximizes bus width per package, and LPDDR5X power management (deep sleep modes, per-bank refresh) preserves battery life during standby. Because 0.5 V VDDQ signaling dominates power integrity at 8.5 Gbps, designers must follow the application processor vendor's fly-by routing and ODT tuning guidelines. Samsung states the LPDDR5X family delivers about 20% better power efficiency than LPDDR5, directly extending screen-on time in AI-heavy workloads.
Recommended
Automotive Infotainment and Cockpit Computing
Samsung promotes its LPDDR5X family for IT and automotive devices, and cockpit domain controllers increasingly demand LPDDR5X bandwidth for multi-display clusters, 3D navigation and in-cabin AI. The K3KL3L30DM-BGCU's 8533 Mbps rate supplies the memory bandwidth needed by high-resolution GPU rendering pipelines, while its -25 C to +85 C operating range covers passenger-compartment electronics. Designers should note that this range does not meet AEC-Q100 Grade 1, so the part suits infotainment rather than powertrain or zone-controller roles. In these systems the DRAM typically pairs with automotive SoCs supporting LPDDR5X, with the PMIC providing the four-rail 1.8 V / 1.05 V / 0.9 V / 0.5 V sequencing. EOL status means automotive programs should secure last-time-buy quantities or qualify an active family variant early in the program.
Recommended
AI Edge Accelerator Memory
Edge AI inference - from large-language-model assistants on-device to real-time video analytics - is memory-bandwidth bound, making LPDDR5X an attractive main memory choice. The K3KL3L30DM-BGCU provides 64 Gb per device at 8533 Mbps; four devices on a x64-serialized bus deliver 32 GB of capacity with multi-hundred-GB/s aggregate bandwidth for model weight streaming. Samsung's 20% power-efficiency gain over LPDDR5 translates into lower SoC thermal budgets in fanless edge boxes. The four-rail supply (1.8 V, 1.05 V, 0.9 V, 0.5 V) typically comes from a dedicated PMIC with dynamic voltage-frequency scaling tied to the AI workload. Designers must budget for high simultaneous-switching noise on VDDQ at 8.5 Gbps and follow the controller vendor's equalization training procedures during bring-up.
Recommended
Premium Tablets and Laptops
Premium tablets and thin-and-light laptops use LPDDR5X as soldered-down main memory to save board space, reduce height and cut power versus DDR5 SODIMM designs. The K3KL3L30DM-BGCU's 64 Gb density allows 8 GB or 16 GB configurations with minimal package count, and its 8533 Mbps rate supports the memory bandwidth demanded by high-refresh displays and content-creation workloads. Samsung highlights LPDDR5X capacity up to 64 GB per system-level configuration for IT devices, which this IC family enables. Thermal design is simpler than discrete-memory PCs because the FBGA dissipates heat into the board, but PCB stack-up must control impedance for the 0.5 V VDDQ signaling. EOL status makes this part relevant mainly for service inventory and repair of existing designs.
Recommended
5G Infrastructure and Networking Equipment
5G baseband units, small-cell routers and network appliances benefit from LPDDR5X bandwidth for packet processing, and Samsung's LPDDR5X platform targets high-throughput communication systems alongside mobile. The K3KL3L30DM-BGCU's 8533 Mbps rate feeds line-card CPUs and network processors handling multi-gigabit streams, while the 64 Gb density supports large buffer and table memory footprints. At -25 C to +85 C, the part suits outdoor-enclosure telecom equipment, though designers should derate for sustained ambient loads. Power architecture in these systems typically pairs the DRAM with a dedicated PMIC supporting LPDDR5X DVFS rails. As the part is EOL, networking OEMs should treat it as a maintenance-stock item and qualify active Samsung LPDDR5X alternatives for new platform builds.
Recommended
High-Resolution Camera and Imaging Systems
Computational photography and industrial machine-vision systems generate burst data volumes that stress memory bandwidth: an 8K image pipeline at high frame rates requires hundreds of GB/s of sustained DRAM throughput. The K3KL3L30DM-BGCU, with 8533 Mbps pin speed and 64 Gb capacity, provides the frame-buffer headroom such pipelines need when paired with image signal processors supporting LPDDR5X. Samsung's stated 20% power-efficiency improvement over LPDDR5 helps battery-powered camera platforms extend recording time. The four-rail supply must be sequenced per the ISP vendor's power-up table, and VDDQ decoupling must handle burst write currents during high-frame-rate capture. Given EOL status, camera OEMs should hold last-time-buy stock for service or migrate to an active family variant with identical ball map.
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Recommended Products Summary
Engineering reference data for K3KL3L30DM-BGCU — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K3KL3L30CM-BGCU | K3KLALA0DM-JGCT | K3KL8L80DM-MGCU |
|---|---|---|---|---|
| Package | 496-ball FBGA | 496-ball FBGA (CM variant) - same family | 496-ball FBGA (DM family) | 496-ball FBGA (DM family) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 64 Gb | 64 Gb | [DATA_NEEDED] | [DATA_NEEDED] |
| Data Rate | 8533 Mbps | 8533 Mbps | [DATA_NEEDED] | [DATA_NEEDED] |
| Organization | x64 | x64 | x64 (LPDDR5X family) | x64 (LPDDR5X family) |
| Supply Rails | 1.8 / 1.05 / 0.9 / 0.5 V | [DATA_NEEDED] | LPDDR5X rail set (per family datasheet) | LPDDR5X rail set (per family datasheet) |
| Operating Temperature | -25 C to +85 C | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | EOL | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Flagship 8533 Mbps speed bin (vs K3KL2L20DM-JGCT)
- 64 Gb single-package density (vs K3KL2L20DM-JGCT)
- Same family package reuse (vs K3KL8L80DM-MGCU)
Design Notes
The K3KL3L30DM-BGCU requires four supply rails: 1.8 V (VDD1), 1.05 V (VDD2), 0.9 V (core) and 0.5 V (VDDQ). At 8533 Mbps the VDDQ rail sees the largest di/dt transients; use a PMIC with LPDDR5X-specific rails and DVFS support, and verify rail sequencing against the host application processor power-up table before first power-on. Estimated: transient current on VDDQ scales with the number of simultaneously switching DQ pins, so budget decoupling per the controller vendor's reference design rather than per-device rules of thumb.
LPDDR5X at 8.5 Gbps demands tight length matching on address/command fly-by routing and per-byte DQ/DQS length control within the tolerance defined by the memory controller layout guide. Keep the DRAM within the controller's specified trace-length budget, maintain single-ended impedance targets for the 0.5 V VDDQ domain, and place the 496-ball FBGA so that VDDQ ball-field decoupling vias reach the power plane directly. Follow Samsung's package land-pattern outline exactly for the DM package code.
Because the K3KL3L30DM-BGCU is EOL, second-source brokers are the main supply path - insist on date-code and packaging evidence, and screen for remarked parts, which are a known counterfeit risk in EOL mobile DRAM. Also, the package suffix matters: DM and CM codes denote different Samsung FBGA variants, and GM/JGCT/MGCU suffixes carry additional grade differences. Never treat a family member as drop-in without confirming the ball map and density tables in firmware.
Compliance Information
Compliance data not present in provided web data. Operating range -25 C to +85 C indicates consumer/IT grade; no AEC-Q100 qualification documented for this MPN.