K4A4G165WD-BCPB - 4Gb DDR4 SDRAM 256Mx16 | Samsung
MPN: K4A4G165WD-BCPB ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.1 | $41.00 |
| 100 | $3.7 | $370.00 |
| 500 | $3.4 | $1,700.00 |
| 1,000 | $3.1 | $3,100.00 |
Drop-in alternatives for K4A4G165WD-BCPB — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A4G165WF-BCWE
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$10.65 / Unit
View Datasheet →K4A4G165WF-BCRC
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$17.08 / Unit
View Datasheet →K4A4G165WF-BCTD
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$2.69 / Unit
View Datasheet →K4A4G165WE-BCTD
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$11.38 / Unit
View Datasheet →MT40A256M16GE-075E:B
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$3.95 / Unit
View Datasheet →K4A4G165WD-BCPB Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 4 Gbit |
| Organization | 256M x 16 |
| Data Rate | 2133 MT/s |
| Core Voltage | 1.2 V |
| Package | FBGA-96 |
| Mounting Type | Surface Mount |
| Die Generation | D-die |
| Bank Architecture | 4 bank groups x 4 banks |
| Burst Length | 8 (BL8, fixed/chop) |
| Interface | DDR4 (synchronous, source-synchronous strobe) |
| Pb-Free | Yes (per Samsung part-numbering suffix) |
| RoHS Status | Compliant (lead-free suffix) |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) |
K4A4G165WD-BCPB fbga-96 Pin Configuration Guide
Complete pinout information for K4A4G165WD-BCPB (fbga-96 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A4G165WD-BCPB.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A4G165WD-BCPB is suitable for 6 applications: Industrial Control Main Memory, Networking Equipment Line Cards, Embedded Computing Modules (SOM/COM), Test and Measurement Instrumentation, Automotive-Adjacent Infotainment and Gateway (non-Qualified), Battery-Powered and Portable Data Loggers.
Industrial Control Main Memory
The K4A4G165WD-BCPB serves as main system memory in industrial controllers, PLCs, and HMIs that run Linux-class SoCs with DDR4 interfaces. Its 1.2V rail cuts memory subsystem power versus DDR3 solutions, important in fanless enclosures where every watt affects thermal design. The 256M x16 organization lets a designer build a 32-bit bus with just two devices, reducing BOM count and routing complexity on dense control boards. In use, two chips attach to a single DDR4 controller channel at up to 2133 MT/s with on-die termination handling bus stubs; the performance consideration is that DDR4 write leveling and read training must complete reliably over the industrial temperature range, so controller training margins should be validated at both temperature extremes during system qualification.
Recommended
Networking Equipment Line Cards
In switches, routers, and network appliances, the K4A4G165WD-BCPB buffers packet data between the network processor and uplink interfaces. The 4Gb density per device suits route-table and queue-buffer workloads, and the 2133 MT/s rate with burst length 8 delivers the sequential bandwidth that packet buffering demands. The FBGA-96 package's small footprint supports the high component density typical of line-card layouts. Designers typically place four or eight x16 devices on a 64-bit or 128-bit DDR4 channel; the key performance trade-off is that many-drop loads at 2133 MT/s require careful fly-by routing and per-device ODT tuning to keep eye diagrams open, making signal-integrity simulation mandatory before fabrication.
Recommended
Embedded Computing Modules (SOM/COM)
System-on-module vendors use the K4A4G165WD-BCPB for soldered-down DRAM on compute modules, where the 96-ball FBGA survives reflow and the x16 organization achieves 2 GB with four devices. The 1.2V operation aligns with the low-voltage power trees of ARM SoCs, and D-die silicon offers mature supply with a qualified F-die successor (K4A4G165WF family) for long-life programs. On the module, DRAM sits within short trace lengths of the processor, allowing 2133 MT/s operation with standard 2D training. The performance consideration is thermal: stacked modules limit airflow, so module designers derate DRAM refresh rate (2x or 4x auto-refresh) at high case temperatures per DDR4 temperature-compensated refresh behavior.
Recommended
Test and Measurement Instrumentation
Oscilloscope, logic analyzer, and signal generator platforms use the K4A4G165WD-BCPB to buffer waveform memory behind high-speed acquisition ASICs or FPGAs. The x16 organization provides wide 32/64-bit buses that maximize burst throughput for streaming capture, while 4 Gb per device allows multi-gigabyte record lengths with a modest chip count. The DLL and ODT features maintain timing integrity at 2133 MT/s across the instrument's internal bus topology. In practice, designers buffer acquisition data through DDR4 with round-robin banking to sustain continuous write bandwidth; the consideration is that refresh cycles consume bus time, so bandwidth budgeting must include the roughly few-percent refresh overhead of the DDR4 refresh scheme.
Recommended
Automotive-Adjacent Infotainment and Gateway (non-Qualified)
For automotive infotainment and gateway prototyping that does not require AEC-Q100-qualified DRAM, the K4A4G165WD-BCPB offers a 1.2V, 4Gb x16 main-memory building block on development platforms before a switch to automotive-grade memory for production. The compact FBGA-96 package fits under-display and tight-module layouts typical of cockpit electronics. Designers benefit from the same controller training flow used in industrial designs, shortening bring-up. The important caveat: this commercial-grade part must not ship in production safety-relevant vehicles; use it for emulation and software bring-up only, then qualify the automotive temperature-grade variant of the same DDR4 footprint for production builds to satisfy OEM quality flows.
Recommended
Battery-Powered and Portable Data Loggers
Data loggers and portable instruments value the K4A4G165WD-BCPB's 1.2V operation and DDR4 self-refresh with temperature-compensated self-refresh, which minimizes standby drain between acquisition events. The x16, 4Gb device stores large ring buffers in low chip count, and 1.2V rails are directly available from modern PMICs without extra conversion stages. During active logging, burst length 8 transfers fill the buffer efficiently; between sessions the controller can enter self-refresh, cutting power to milliwatt levels. The design consideration is retention time versus refresh power: at elevated temperatures the refresh rate doubles, so logger firmware should throttle to self-refresh entry only within the temperature window where TCSR keeps power minimal.
Recommended
Recommended Products Summary
Engineering reference data for K4A4G165WD-BCPB — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A4G165WF-BCWE | K4A4G165WF-BCRC | K4A4G165WF-BCTD | K4A4G165WE-BCTD | MT40A256M16GE-075E:B |
|---|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 2133 MT/s | 2666 MT/s class | 2666 MT/s class | 2400 MT/s class | 2400 MT/s class | 2133 MT/s class (-075) |
| Core Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Generation | D-die | F-die | F-die | F-die | E-die | Micron E-die class |
| Lifecycle Position | Mature generation (D-die) | Current generation (F-die) - preferred for new builds | Current generation (F-die) | Current generation (F-die) | Prior generation (E-die) | Active - second source option |
Key Differentiators
- Mature D-die silicon with proven field history (vs K4A4G165WF-BCWE)
- Exact speed-bin match from Micron (vs MT40A256M16GE-075E:B)
- x16 organization minimizes chip count (vs All alternatives)
Design Notes
At 2133 MT/s, DDR4 fly-by routing with per-device on-die termination (ODT) is mandatory. Keep trace-length mismatch within the window your memory controller specifies (typically tens of mils for address/command, matched length per byte lane for DQ/DQS). Route DQ/DQS as tightly coupled pairs over a continuous reference plane; avoid crossing plane splits. Run IBIS or S-parameter-based SI simulation before fabrication - DDR4 eye masks at 2133 leave limited margin, especially with two devices per channel in x16 configuration.
The K4A4G165WD-BCPB operates from a 1.2V VDD/VDDQ domain. Estimated: four devices bursting at 2133 MT/s draw several amps of transient current, so place bulk capacitance plus a local buck converter (e.g., a TPS54218-class point-of-load part) near the memory bank and check PMIC transient response against worst-case BL8 write bursts. Generate VREFDQ/VREFCA per your SoC's reference scheme and decouple each ball group with high-frequency ceramics.
Do not substitute speed-bin suffixes blindly: BCPB (2133-class) parts run at more conservative latency settings than F-die BCRC/BCWE parts. After any die or vendor change (D-die to F-die, Samsung to Micron), rerun full DDR4 training - write leveling, read gate/deskew, and VREFDQ training - on first boot. Also verify refresh behavior at elevated temperature: DDR4 default refresh doubles above the standard temperature threshold, affecting bandwidth budgets.
Follow Samsung's reference layout for FBGA-96 DDR4: place the device within the controller's specified routing radius, use sequential or daisy-chain topology per channel, and provide solid return paths under all memory nets. Leave testpoints on CS/CKE/ODT control nets for bring-up debugging, and expose a SWD/JTAG or controller-level DDR training log to accelerate qualification on new boards.
Compliance Information
Pb-free per Samsung part-number suffix (P in BCPB denotes Pb-free assembly). REACH, halogen-free, and conflict-minerals status require the official Samsung material declaration sheet for this speed grade.
