K4A4G165WD-BCRC - 4Gb DDR4 SDRAM 2400MHz | Samsung
MPN: K4A4G165WD-BCRC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.48 | $6.48 |
| 10 | $6.1 | $61.00 |
| 100 | $5.75 | $575.00 |
| 500 | $5.4 | $2,700.00 |
| 1,000 | $5.1 | $5,100.00 |
Drop-in alternatives for K4A4G165WD-BCRC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A4G165WD-BCPB
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$3.1 / Unit
View Datasheet →K4A4G165WE-BCRC
✅ Drop-In📋 Reference alternative (not in catalog)
K4A4G165WF-BCRC
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$17.08 / Unit
View Datasheet →K4A4G165WE-BCTD
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$11.38 / Unit
View Datasheet →K4A4G165WF-BCTD
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$2.69 / Unit
View Datasheet →K4A4G165WF-BCWE
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$10.65 / Unit
View Datasheet →K4A4G165WD-BCRC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 4 Gbit |
| Organization | 256M x 16 |
| Speed Bin | DDR4-2400 (BCRC) |
| Supply Voltage | 1.2 V |
| Package | FBGA-96 |
| Mounting Type | Surface Mount |
| Process Generation | Samsung D-die |
| Interface Type | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | Yes |
| Data Mask Function | Yes |
| Auto Precharge | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| RoHS Status | Lead free / RoHS Compliant |
K4A4G165WD-BCRC [data_needed: package dimensions] Pin Configuration Guide
Complete pinout information for K4A4G165WD-BCRC ([data_needed: package dimensions] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: package dimensions] package pinout diagram for K4A4G165WD-BCRC](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K4A4G165WD-BCRC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A4G165WD-BCRC is suitable for 6 applications: Industrial PC Main Memory, FPGA Processing Platforms, Networking Equipment Line Cards, Desktop and IPC Memory Repair (Component Level), Embedded Vision and Edge AI Boards, Test and Measurement Instrumentation.
Industrial PC Main Memory
Industrial PCs and embedded x86 controllers rely on soldered-down DDR4 for vibration immunity and long product lifecycles. The K4A4G165WD-BCRC fits this role with 4Gb density, 256M x 16 organization, and 1.2V operation at the DDR4-2400 speed bin, giving roughly 19.2 GB/s peak bandwidth per 64-bit channel of four x16 parts. Because the FBGA-96 package is surface-mounted, it survives shock and thermal cycling better than DIMM sockets. Designers should match the controller's DDR4-2400 CL17 timing table and use fly-by address routing with proper ODT programming; unlike DIMMs, soldered DRAM requires the SPD values to be hardcoded in the BIOS or bootloader.
Recommended
FPGA Processing Platforms
FPGA boards for video processing, data acquisition, and machine vision frequently use x16 DDR4 components on 16-bit or 32-bit memory interfaces. The K4A4G165WD-BCRC's 2400 MT/s rate and bank-group architecture let a single 16-bit FPGA DDR4 controller reach about 4.8 GB/s per component. Its 1.2V rail matches the DDR4 PHY calibration assumptions in vendor memory-controller IP. When instantiating memory-controller IP such as Xilinx MIG, select equivalent generic DDR4-2400 x16 settings since Samsung models may not be preset; then validate with a full-controller traffic test. On-die termination and ZQ calibration simplify board-level termination design at this data rate.
Recommended
Networking Equipment Line Cards
Switch, router, and network-appliance line cards use DDR4 as packet-buffer and control-plane memory, where bandwidth and deterministic access matter. The K4A4G165WD-BCRC provides 4Gb per component, allowing 8 Gbit buffers from just two x16 devices on a 32-bit bus, at 1.2V power draw that is attractive in always-on networking hardware. The DDR4-2400 bin sustains the streaming read/write patterns typical of packet buffering, and CRC plus auto-precharge features reduce software overhead. Layout should follow fly-by clock/address topology with per-controller ODT tuning; signal integrity at 2400 MT/s demands controlled impedance and length matching on DQS/DQ pairs.
Recommended
Desktop and IPC Memory Repair (Component Level)
Component-level repair of desktop boards, graphics cards, and integrated-memory systems often requires replacing individual DDR4 BGA components. The K4A4G165WD-BCRC is a common original fitment in such systems, so matching D-die, 256M x 16 organization, and the DDR4-2400 BCRC bin preserves original timing tables and SPD programming. The FBGA-96 footprint allows reballing onto the same land pattern. Repair technicians should verify that the replacement's speed bin equals or exceeds the original and that BIOS-configured timings match; a slower-bin substitute may fail POST on platforms programmed for 2400 MT/s CL17 operation.
Recommended
Embedded Vision and Edge AI Boards
Embedded vision SoCs and edge-AI accelerators commonly expose a 16-bit or 32-bit DDR4 interface for frame buffers and neural-network weight storage. The K4A4G165WD-BCRC's 4Gb capacity holds multi-megapixel frame buffers with headroom, while its 2400 MT/s bandwidth minimizes display-tear and inference-latency bottlenecks on a 16-bit channel (about 4.8 GB/s). Its 1.2V supply suits thermally constrained fanless enclosures. Designers should budget refresh (tREFI) overhead and enable ODT values recommended by the SoC vendor; the CRC feature helps in systems where memory errors would corrupt video output or model execution.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators need deep acquisition memory with sustained streaming bandwidth. The K4A4G165WD-BCRC provides 4Gb per device at DDR4-2400, letting instruments implement multi-gigabyte capture buffers from a modest device count at 1.2V, reducing total board power versus older DDR3 designs. Bank-group interleaving supports the continuous write streams generated by high-sample-rate front ends. Instruments benefit from the part's CRC and ZQ calibration for long-term reliability under continuous duty. Firmware must implement controller calibration routines at every power-up, and thermal design should account for sustained write activity raising DRAM junction temperature.
Recommended
Recommended Products Summary
Engineering reference data for K4A4G165WD-BCRC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A4G165WD-BCPB | K4A4G165WE-BCRC | K4A4G165WF-BCRC | K4A4G165WE-BCTD |
|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed Bin | DDR4-2400 (BCRC) | DDR4-2133 | DDR4-2400 | DDR4-2400 | DDR4-2666 |
| Die Generation | D-die | D-die | E-die | F-die | E-die |
| Unit Price (1+) | $6.48 (as of 2026-09-04) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RoHS | Compliant / Lead free | Compliant / Lead free | Compliant / Lead free | Compliant / Lead free | Compliant / Lead free |
Key Differentiators
- Same-die speed-bin headroom (vs K4A4G165WD-BCPB)
- Newer-node availability in the same footprint (vs K4A4G165WE-BCRC)
- 16-bit organization simplifies narrow-bus embedded designs (vs K4A4G085WD-BCRC (x8))
Design Notes
At the DDR4-2400 data rate (1200 MHz clock), DQ/DQS and address/command routing demand controlled-impedance traces, length matching within the DDR4 standard skew budgets, and fly-by topology for clock/address/command with per-DIMM-style termination. Route DQ and DQS diff pairs over solid ground planes, avoid crossing plane splits, and follow the Samsung datasheet layout guidelines for the FBGA-96 ballout. On 16-bit designs, keep the DQS0/DQS1 byte-lane pairs matched intra-pair to under the spec skew; failures here typically appear as intermittent calibration errors at temperature extremes.
Provide a clean 1.2V rail (VDD) plus VDDQ and separate termination supply per the datasheet power balls, decoupled with bulk capacitance (tens of uF) at the VRM and high-frequency ceramics (0.1 uF, 0.01 uF) at DRAM power balls. DDR4 draw is bursty: a four-device 64-bit bus at 2400 MT/s can transient several amps during back-to-back writes. Estimated: a single 4Gb x16 device draws on the order of 300-600 mA average under active streaming (exact ICCA/ICC values in datasheet), so size the regulator for the sum plus margin and verify VDDQ droop during calibration with an oscilloscope.
Three frequent mistakes: (1) substituting a slower speed bin (e.g., BCPB DDR4-2133) where the controller is programmed for DDR4-2400 CL17 - the system will fail training; (2) hardcoding SPD/timings that match a different die generation when second-sourcing E-die or F-die parts - always re-run memory training and re-verify at temperature corners; (3) ignoring refresh overhead (tREFI/tRFC) in bandwidth budgets, which costs a few percent of theoretical throughput. Also confirm the exact die revision against Samsung datasheet revision history before production release.
Compliance Information
Distributor listing states Lead free / RoHS Compliant (ICComponents). REACH, halogen-free, and conflict-minerals declarations not included in provided data - request from Samsung or distributor.
