K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
MPN: K4A8G165WB-BCTD ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.42 | $7.42 |
| 10 | $6.95 | $69.50 |
| 100 | $6.45 | $645.00 |
| 500 | $5.95 | $2,975.00 |
| 1,000 | $5.5 | $5,500.00 |
Drop-in alternatives for K4A8G165WB-BCTD — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A8G165WB-BCRC
✅ Drop-In✓ In Stock
$12.57 / Unit
View Datasheet →K4A8G165WC-BCTD
✅ Drop-In✓ In Stock
$41.2 / Unit
View Datasheet →K4A8G165WB-BCWE
✅ Drop-In✓ In Stock
$6.55 / Unit
View Datasheet →MT40A512M16HA-075:E
✅ Drop-In📋 Reference alternative (not in catalog)
H5ANAG8MNJA-UHC
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G165WB-BCTD Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 512M x 16 |
| Data Rate | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V |
| Operating Temperature | 0C to +85C |
| Package | 96FBGA |
| Die Generation | B-die |
| Mounting Type | Surface Mount (BGA) |
| Interface | DDR4 (parallel, double data rate) |
| Data Mask | Supported (DM per x16 lane) |
| ZQ Calibration | Supported |
| Dynamic On-Die Termination | Supported |
| RoHS Status | Compliant (per JLCPCB listing: ROHS) |
K4A8G165WB-BCTD 96fbga Pin Configuration Guide
Complete pinout information for K4A8G165WB-BCTD (96fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A8G165WB-BCTD.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G165WB-BCTD is suitable for 6 applications: Embedded Computing Boards, Networking Switches and Routers, Industrial PCs and HMI Panels, Set-Top Boxes and Smart TV Platforms, Automotive Infotainment (non-safety), Test and Measurement Instruments.
Embedded Computing Boards
Embedded single-board computers and COMs use the K4A8G165WB-BCTD as main memory because its 8Gb density yields 1 GB per chip and its x16 organization matches the 16-bit or 32-bit DDR4 controllers common in ARM SoCs and FPGAs. Placed on a fly-by-routed 2666 Mbps bus with dynamic ODT enabled and ZQ calibration at boot, the device sustains full-bandwidth operation with four-layer stackups when length-matched within +/-25 mils on data lanes. Its commercial 0C to +85C range covers most industrial enclosure conditions, while the 1.2V rail keeps memory power under roughly 0.5 W per chip in typical read/write mixes.
Recommended
Networking Switches and Routers
Packet-buffer and control-plane memory in enterprise switches and routers benefits from the K4A8G165WB-BCTD's 2666 Mbps rate and per-lane data mask, which lets firmware perform partial writes into packet descriptors without read-modify-write cycles. Multiple x16 devices are ganged into 32-bit or 64-bit buses for 8-16 GB of buffer memory on the same 96FBGA footprint, and the CRC/CA parity capability improves command-bus integrity in electrically noisy backplane environments. Compared with GDDR or QDR alternatives, DDR4 x16 DRAM offers the best cost per gigabit for buffering at 10G-100G line rates.
Recommended
Industrial PCs and HMI Panels
Industrial PCs, machine-vision controllers, and HMI panels deploy the K4A8G165WB-BCTD for frame buffers and application memory. The B-die's stable 2666 Mbps operation at 1.2V gives headroom against supply sag on 24V-derived rails, and the +85C rating covers most fanless enclosures when PCB copper spreads junction heat. The 96FBGA ball array tolerates vibration better than TSOP DDR3 packages, and dynamic on-die termination reduces the number of external termination components, improving reliability in dusty, conductive-contaminant environments typical of factory floors.
Recommended
Set-Top Boxes and Smart TV Platforms
Consumer video platforms attach one or two K4A8G165WB-BCTD devices to the SoC's 16/32-bit DDR4 interface to reach 1-2 GB of memory for 4K video decoding at minimum BOM cost. The 2666 Mbps bin matches the bandwidth needed for HEVC multi-stream decode, and the x16 organization eliminates byte-enable complexity on cost-sensitive PCBs. Its 1.2V operation directly satisfies energy-star style standby targets, and the commodity 96FBGA footprint keeps board area small enough for stick-form set-top hardware.
Recommended
Automotive Infotainment (non-safety)
Infotainment and cluster SoCs with commercial-range x16 DDR4 controllers use the K4A8G165WB-BCTD in non-safety domains where the 0C to +85C window is acceptable (in-cabin temperature-managed zones). The 8Gb density supports map rendering and multi-display compositing at 2666 Mbps, and CRC on the command/address bus improves robustness against EMI from the vehicle's RF environment. For under-dash installations exceeding +85C, substitute the K4A8G165WC-BCTD with its +95C ceiling; for true AEC-Q100 requirements, select an automotive-qualified DDR4 instead.
Recommended
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators buffer acquisition data in deep DDR4 arrays; the K4A8G165WB-BCTD's x16 organization and 2666 Mbps rate allow dense, wide buses (64-bit x4 chips = 4 GB) with round-trip read streaming fast enough to sustain display refresh. The data mask function supports ring-buffer style partial writes, and ZQ-calibrated termination keeps eye diagrams open on long multi-drop instrument backplanes. Consistent JEDEC timing across the WB/WC family lets instrument vendors qualify one layout across speed grades.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G165WB-BCTD — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G165WB-BCRC | K4A8G165WC-BCTD | K4A8G165WB-BCWE | MT40A512M16HA-075:E | H5ANAG8MNJA-UHC |
|---|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA - same | 96FBGA - same | 96FBGA - same | 96FBGA (JEDEC standard ballout) | 96FBGA (JEDEC standard ballout) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 2666 Mbps | 2400 Mbps | 2666 Mbps | 2666 Mbps | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C | [DATA_NEEDED] | 0C to +95C | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Temperature Upgrade Path | Standard commercial | Standard commercial | +95C headroom | Standard commercial | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- 2666 Mbps speed bin in the B-die family (vs K4A8G165WB-BCRC)
- Cost-optimized commodity B-die generation (vs K4A8G165WC-BCTD)
- x16 organization simplifies low-cost buses (vs MT40A512M16HA-075:E)
Design Notes
Route the DDR4 address/command bus in fly-by topology with dynamic ODT enabled, and keep x16 data lanes (DQ0-15, DM0, DQS0P/N, DQS1P/N) length-matched within +/-25 mils intra-lane and skew-controlled across lanes. At 2666 Mbps, run IBIS-AMI simulation with Samsung's B-die model before tape-out; the 1.14-1.26V VDD window leaves little margin for excessive ISI, so target ODT settings per the controller calibration algorithm rather than fixed register values.
Supply 1.2V from a DDR4-rated point-of-load regulator (e.g., TPS54218-class) with 1% or better DC accuracy. Per-device average current at DDR4-2666 is on the order of hundreds of milliamps during active read/write (see the manufacturer datasheet IDD table for exact bin values), so decouple each ball pair with at least one 0.1uF ceramic within 2 mm plus bulk 22-47uF per device. VPP (if used in the design) must follow the datasheet rail - verify on the schematic, not assumed from DDR3 practice.
The 96FBGA ball pitch (~0.8-1.0 mm class) permits via-in-pad with filled microvias on 8-layer stackups; dedicate at least one full ground plane under the memory region for return current. Keep the ZQ ball's 240-ohm 1% resistor on a quiet, short trace with its own local ground via. Avoid routing DDR4 under switching-regulator inductors, and follow the controller vendor's layout checklist (e.g., Xilinx/Intel DDR4 PCB design guides) which align with Samsung's datasheet layout recommendations.
Do not mix speed bins (BCTD/BCRC/BCPB) on the same bus without derating to the slowest bin's timing table, and re-run memory-controller training firmware after any substitution - even same-die Samsung variants can shift training margins. Also avoid assuming x8 and x16 parts are interchangeable: MT40A1G8SA x8 or H5AN8G6 x8 parts do NOT fit the same x16 netlist despite the same footprint class.
Compliance Information
RoHS compliance indicated by ROHS designation in LCSC/JLCPCB listing (C2920126). REACH, halogen-free, and conflict-minerals status not found in provided data - request Samsung's official compliance package.
