Samsung Electronics

K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung

MPN: K4A8G165WB-BCRC ✓ Active
In Stock Ships in 1-3 business days
1.2 V Vdss 96-ball FBGA (PBGA96) Package 1200 MHz (DDR4-2400) Speed DDR4 SDRAM (DRAM, volatile) Memory
From $12.4 USD / Unit
MOQ: 1 |
Price updated: 2026-09-03
Volume Pricing
Qty Unit Price Extended
1 $15.47 $15.47
10 $14.7 $147.00
100 $13.93 $1,393.00
500 $13.16 $6,580.00
1,000 $12.4 $12,400.00
ℹ️ All prices are in USD

Drop-in alternatives for K4A8G165WB-BCRC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K4A8G165WB-BCPB

✅ Drop-In
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📦 96-ball FBGA
8 Gb · 512M x 16 · 2133 Mbps (PC4-17000) · 1.2 V (1.14 V to 1.26 V) · 0°C to 85°C · 96-ball FBGA (TFBGA-96) · 8 (BL8) · Sequential and Interleave

✓ In Stock

$2.3 / Unit

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K4A8G165WB-BCTD

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR4 SDRAM · 512M x 16 · 8 Gb · 2666 Mbps/pin (PC4-2666) · 1.2 V · 96-ball FBGA · 0°C to +95°C (TC) · [DATA_NEEDED: CL value]

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$37 / Unit

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K4A8G165WB-BCWE

✅ Drop-In
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📦 96-ball FBGA
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 19 ns · Parallel · 96FBGA

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K4A8G165WC-BCRC

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR4 SDRAM · 8 Gb · 512M x 16 · 2400 Mbps · 1.2 V (1.14V to 1.26V) · 2.5 V · 0°C to +95°C (case) · 96-ball FBGA (9mm x 13mm)

✓ In Stock

$23 / Unit

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K4A4G165WD-BCRC

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR4 SDRAM · 4 Gbit · 256M x 16 · DDR4-2400 (BCRC) · 1.2 V · FBGA-96 · Surface Mount · Samsung D-die

✓ In Stock

$5.1 / Unit

View Datasheet →

K4A8G165WB-BCRC Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM (DRAM, volatile)
Memory Size 8 Gb
Memory Organization 512M x 16
Interface Parallel (DDR4 SDRAM bus)
Supply Voltage (VDD) 1.2 V
Data Rate 2400 Mbps/pin (DDR4-2400)
Technology CMOS, B-die 8Gb die
Package 96-ball FBGA (PBGA96)
Mounting Type Surface Mount
Operating Temperature -40C to +95C
Auto Precharge Yes
Asynchronous Reset Yes
CRC / CA Parity CRC function supported
On-Chip Termination Dynamic ODT
ZQ Calibration Yes
Clock Frequency 1200 MHz (DDR4-2400)

K4A8G165WB-BCRC 96-ball fbga (pbga96) Pin Configuration Guide

Complete pinout information for K4A8G165WB-BCRC (96-ball fbga (pbga96) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

96-ball fbga (pbga96) package pinout diagram for K4A8G165WB-BCRC

No detailed pinout data available for K4A8G165WB-BCRC.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K4A8G165WB-BCRC Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K4A8G165WB-BCRC is suitable for 6 applications: Industrial Control Systems, Network Communication Equipment, Servers and Storage Controllers, Embedded Computing and Single-Board Computers, Test and Measurement Instrumentation, Automotive-adjacent and Rugged Embedded Systems.

🏭

Industrial Control Systems

The K4A8G165WB-BCRC fits industrial PLCs, motion controllers, and HMI platforms because its -40C to +95C operating range covers unconditioned cabinet environments, and its CRC and CA parity functions protect command/address integrity against electrical noise from drives and switching loads. As the main working memory for an ARM or FPGA-based controller, one 512M x16 device provides 1 GB of buffering for recipe storage, logging, and real-time control loops at 2400 Mbps. Place the DRAM point-to-point from the processor with length-matched traces and dynamic ODT enabled; the ZQ calibration resistor maintains driver impedance accuracy over the full temperature swing, reducing eye-closure risk in thermally cycling enclosures.

🌐

Network Communication Equipment

Routers, switches, and baseband cards use the K4A8G165WB-BCRC as packet-buffer and table memory. The 512M x16 organization suits designs that populate one or two DRAMs beside a network processor, and the 2400 Mbps data rate supplies 4.8 GB/s of read/write bandwidth per device for queuing and classification workloads. CRC on the DDR4 bus plus dynamic on-chip termination keeps signaling robust on multi-layer backplane-adjacent PCBs where trace stubs and impedance discontinuities would otherwise close the data eye. Mount the ZQ calibration resistor (240 ohm, 1%) to SGND near the ball, and follow the fly-by or point-to-point topology rules in the Samsung datasheet to preserve timing margin at DDR4-2400 in dense switch fabric layouts.

🖥️

Servers and Storage Controllers

In entry-level servers, RAID cards, and SSD controllers, the K4A8G165WB-BCRC serves as firmware execution memory, cache, and metadata buffer. The 8Gb B-die die maximizes capacity per component, letting a controller board reach multiple gigabytes with a handful of FBGA-96 parts instead of stacked lower-density devices, improving reliability by reducing solder-joint count. The asynchronous reset function enables rapid re-initialization after controller faults, important for high-availability storage. Because server environments stay within 0C to +85C ambient under the component's 95C limit, thermal design should still verify airflow over the package; Estimated: DDR4-2400 activity dissipates on the order of hundreds of milliwatts per device, manageable with standard airflow.

🧩

Embedded Computing and Single-Board Computers

Embedded ARM boards, gateways, and IoT edge platforms adopt the K4A8G165WB-BCRC because one x16 component provides 1 GB of DDR4 with a minimal footprint: the 96-ball FBGA occupies roughly 10 mm x 14.5 mm of board area, fitting beneath or beside the SoC in compact layouts. At 1.2V VDD the device improves energy efficiency versus DDR3, extending battery-backed and thermally constrained designs. SoC DDR controllers that support DDR4-2400 x16 initialize the device using its asynchronous reset and ZQ calibration sequence. Designers should keep the clock and strobes length-matched within controller skew budgets and reference the Samsung datasheet initialization timing before releasing firmware memory-init code.

🔧

Test and Measurement Instrumentation

Oscilloscopes, logic analyzers, and arbitrary waveform generators require deep capture memory with predictable latency, and the K4A8G165WB-BCRC provides 512M x16 words of DDR4 buffer at 2400 Mbps. CRC and CA parity flag bus errors that would otherwise corrupt acquired waveforms silently, an important diagnostic feature in calibration-grade instruments. The -40C to +95C grade accommodates bench instruments transported between environments. Instrument designers typically pair the DRAM with an FPGA memory controller; ensure the write-leveling and read-training routines in the controller handle the BCRC bin's timing parameters from the Samsung datasheet, and budget capture-bandwidth against the 4.8 GB/s per-device streaming limit when architecting multi-DRAM banks.

🚗

Automotive-adjacent and Rugged Embedded Systems

Telematics units, dash-side recording platforms, and rugged gateways that are not AEC-Q100-certified but face harsh environments use the K4A8G165WB-BCRC for its -40C to +95C rating and CRC-protected bus. The 8Gb x16 device stores event logs, map tiles, and video ring buffers for camera-based systems, with 2400 Mbps bandwidth supporting sustained recorder write streams. Dynamic ODT and ZQ calibration preserve signal integrity across automotive-grade thermal cycling of the enclosure (note: the commercial/industrial grade part itself is not AEC-Q100 qualified; confirm qualification requirements with Samsung for true automotive deployments). Layout should avoid routing DDR4 near ignition-noise sources and use solid reference planes under all data groups.

What is the K4A8G165WB-BCRC?
The K4A8G165WB-BCRC is a Samsung 8Gb DDR4 SDRAM organized as 512M x 16, operating at 1.2V with a 2400 Mbps data rate, in a 96-ball FBGA package. It is built on Samsung B-die technology and rated for -40C to +95C operation. According to the Samsung datasheet, it supports auto precharge, asynchronous reset, CRC, dynamic on-chip termination, and ZQ calibration.
What is the price of K4A8G165WB-BCRC?
As of 2026-09-04, the K4A8G165WB-BCRC starts around $15.47 at unit quantity on LCSC, with pricing that varies by quantity break and distributor stock position. Octopart lists 23 distributors carrying the part, so comparison shopping frequently yields better bulk pricing. XAIPART lists tiered pricing from 1 to 1000 pieces; request a quote for volume commitments above 1000 units.
Where to buy K4A8G165WB-BCRC online?
The K4A8G165WB-BCRC is purchasable from LCSC (230 units in stock at publication), and via RFQ from independent distributors such as Win Source, NetSource Technology, Sierra IC, and Avaq. Octopart aggregates 23 distributor sources for price and stock comparison. XAIPART also offers this part with tiered quantity pricing; check the stock badge on this page before ordering, as DRAM availability moves quickly.
Is K4A8G165WB-BCRC in stock?
Yes, stock has been reported recently: LCSC showed 230 units in stock and icDirectory reported 28,800 pieces as of May 2025, though DRAM stock levels change weekly. Because allocation cycles affect DDR4 components, verify real-time availability at checkout. If immediate stock is unavailable, the pin-compatible K4A8G165WB-BCPB is a same-die alternative that may have better supply.
What is the best drop-in replacement for K4A8G165WB-BCRC?
The best drop-in replacement for K4A8G165WB-BCRC is the Samsung K4A8G165WB-BCPB, which shares the same die, 8Gb x16 organization, 1.2V operation, and 96-ball FBGA footprint, differing only in speed-bin and packaging code. Other same-family options include K4A8G165WB-BCTD and K4A8G165WB-BCWE. Verify the speed bin meets your controller timing budget before swapping; all use the identical PCB land pattern.
Can K4A8G165WB-BCPB replace K4A8G165WB-BCRC?
Yes. The K4A8G165WB-BCPB is pin-to-pin compatible with the K4A8G165WB-BCRC in the same 96-ball FBGA package with identical 512M x16 organization and 1.2V supply. The suffix difference reflects speed bin and JEDEC-registered packaging variants, so confirm the data rate of the BCPB bin meets or exceeds your DDR4 controller configuration. This makes it the first-choice cross when the BCRC is out of stock.
What is the difference between K4A8G165WB-BCRC and K4A8G165WB-BCTD?
Both are Samsung 8Gb x16 DDR4 SDRAMs on the same B-die in the same 96-ball FBGA package; the difference is the speed bin indicated by the final suffix. The BCRC and BCTD bins correspond to different certified data-rate/timing grades (e.g., different CL and tCK ratings per the Samsung DDR4 datasheet bin tables). A board designed for the slower bin can usually run the faster bin, but not the reverse, so check your controller's supported speed grades before substitution.
What are the key specifications of K4A8G165WB-BCRC that engineers should know?
Engineers should know five facts: it is an 8Gb DDR4 SDRAM organized 512M x 16; it operates from a 1.2V supply at up to 2400 Mbps/pin (DDR4-2400 class); it is housed in a 96-ball FBGA surface-mount package; it is rated -40C to +95C; and it implements auto precharge, asynchronous reset, CRC, dynamic ODT, and ZQ calibration per the Samsung datasheet. These parameters define footprint, power, and controller compatibility.
Where can I download the K4A8G165WB-BCRC datasheet PDF?
The K4A8G165WB-BCRC datasheet PDF is available from Samsung Semiconductor and aggregator sites such as alldatasheet.com (a 69-page document covering the 8Gb B-die DDR4 x16 family), datasheets.com, and LCSC's product page, which links the official datasheet. Always prefer the revision hosted on samsung.com or the LCSC product page, since Samsung reserves the right to change specifications without notice.
Where can I find the K4A8G165WB-BCRC pinout?
The K4A8G165WB-BCRC pinout is documented in the Samsung 8Gb B-die DDR4 SDRAM datasheet in the ball-map section for the 96-ball FBGA package. The ball map assigns the 16-bit data bus (DQ0-DQ15 with DQS/DQS# pairs), differential clock (CK/CK#), command/address balls, power and ground balls, reset, ZQ, and VREF balls. Download the datasheet PDF from Samsung or LCSC for the complete, authoritative ball assignment table.
Is the K4A8G165WB-BCRC suitable for industrial applications?
Yes. The BCRC grade is specified for -40C to +95C operation, covering industrial ambient extremes, and its CRC and CA parity features improve command/address integrity in electrically noisy environments. Applications documented by distributors include industrial control, network communication equipment, and embedded computing. For automotive deployments, confirm with Samsung whether an automotive-qualified DDR4 variant is required, as industrial-grade temperature rating alone is not AEC-Q100 qualification.
When should I choose K4A8G165WB-BCRC over K4A4G165WD-BCRC?
Choose the K4A8G165WB-BCRC when your design needs 8Gb (1 GB) of DRAM per component; choose the K4A4G165WD-BCRC when 4Gb (512 MB) suffices and cost matters, since the 4Gb part is typically cheaper. Both use x16 organization and compatible FBGA footprints in the Samsung lineup, but density differs by 2x, so memory maps and controller address configurations must match the installed density. Verify footprint equivalence in the respective datasheets before layout reuse.
What is the best Micron equivalent for K4A8G165WB-BCRC?
A functionally comparable cross-brand part would be a Micron 8Gb DDR4 SDRAM in 512M x16 organization in the same JEDEC-standard 96-ball FBGA package; however, XAIPART has not verified a specific Micron MPN against the K4A8G165WB-BCRC ball map in the available web data, so no cross-brand MPN is listed here. JEDEC FBGA-96 standardization makes same-organization parts candidates, but always verify ball-map, speed bin, and Initialization behavior against both datasheets before qualifying a cross-brand swap.
Is K4A8G165WB-BCRC the same as K4A8G165WB-BCPB?
Not exactly, but they are the same 8Gb x16 DDR4 die in the same 96-ball FBGA package. The trailing suffix encodes the JEDEC speed bin and processing/packaging code, so BCRC and BCPB parts may carry different certified timing grades. Functionally, a board designed for one bin usually accepts the other if its controller supports that bin's timing. Treat them as pin-compatible drop-in alternatives, not identical parts, and validate timing closure after any swap.
What power supply design considerations apply to K4A8G165WB-BCRC?
The K4A8G165WB-BCRC runs from a 1.2V VDD rail; DDR4 also requires VPP at 2.5V for the wordline pump and a VREFCA reference for command/address inputs. Estimated: at 2400 Mbps with typical DDR4-2400 activity, per-device current is on the order of hundreds of milliamps, so use a regulator rated with margin and bulk plus per-ball decoupling capacitors placed close to the FBGA. Follow the Samsung datasheet power-up sequence: apply VDD/VPP before or with VREFCA, and hold reset during ramp.

Engineering reference data for K4A8G165WB-BCRC — comparison, design guidance, and compliance information.

Selection Guide

Choose the K4A8G165WB-BCRC when you need 8Gb (1 GB) of x16 DDR4 with industrial -40C to +95C rating at DDR4-2400 class speed in a single FBGA-96 component - typical for industrial control, networking buffers, and embedded boards. If stock is short, the K4A8G165WB-BCPB is the first drop-in substitute (same die and footprint; verify the bin matches your controller timing), followed by K4A8G165WB-BCTD and BCWE, which differ only in certified speed grade. Choose K4A8G165WC-BCRC only after confirming the C-die timing tables fit your controller. When 1 GB per chip is over-capacity and cost is the driver, select the K4A4G165WD-BCRC and update the controller memory map for 4Gb. For genuinely AEC-Q100 automotive programs, pick Samsung's automotive DDR4 line (e.g., K4RHE series) rather than an industrial-grade part.

Comparison with Alternatives

Parameter This Product K4A8G165WB-BCPB K4A8G165WB-BCTD K4A8G165WB-BCWE K4A4G165WD-BCRC
Package 96-ball FBGA 96-ball FBGA - same 96-ball FBGA - same 96-ball FBGA - same 96-ball FBGA family - same footprint class
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Memory Size 8 Gb 8 Gb 8 Gb 8 Gb 4 Gb (-50%)
Organization 512M x 16 512M x 16 512M x 16 512M x 16 256M x 16
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Speed Bin / Data Rate BCRC bin (DDR4-2400 class) [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] BCRC bin
Operating Temperature -40C to +95C -40C to +95C [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Features Auto precharge, async reset, CRC, dynamic ODT, ZQ cal Same feature set (same die) Same feature set (same die) Same feature set (same die) Same DDR4 feature set, lower density
Unit Price (qty 1) $15.47 (as of 2026-09-04) [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Highest density in the WB x16 family (vs K4A4G165WD-BCRC)
  • Industrial temperature grade (vs K4A8G165WB-BCPB)
  • Full DDR4 integrity feature set (vs K4A8G165WB-BCTD)

Design Notes

DDR4-2400 on an x16 bus demands length-matched routing: keep DQ/DM/DQS trace skew within the controller specification and match CK to CA within the datasheet flight-time budget. Use dynamic ODT during writes and on-die termination settings per the Samsung datasheet to damp reflections; enable write leveling and read training in the memory controller during initialization. Avoid routing DDR4 signals across plane splits, and keep a continuous reference plane under every data group. Estimated: at 1200 MHz, a 25 mm stub can resonate enough to close the data eye on FR-4, so eliminate all stubs with point-to-point topology.

Supply the K4A8G165WB-BCRC from a clean 1.2V VDD rail plus a separate 2.5V VPP rail for the wordline pump, with VREFCA generated per the datasheet reference circuit. Decouple with bulk capacitance at the regulator and an array of 100 nF ceramics placed directly under the FBGA-96 power balls. Follow the power-up sequence: VDD and VPP ramp before or together with VREFCA while RESET_n is held low, then complete initialization including ZQ calibration (240 ohm, 1% resistor to ground at the ZQ ball). Estimated: per-device average current at DDR4-2400 activity is on the order of hundreds of milliamps - size the regulator with at least 50% margin.

Do not assume all K4A8G165WB suffixes carry identical speed bins - the final letter code (BCRC, BCPB, BCTD, BCWE) encodes JEDEC timing grades, and programming a controller for a faster bin than the installed part violates tCK/CL requirements causing unstable boot. Also verify the die revision letter in the full ordering code: the C-die (K4A8G165WC) may have different timing tables from the B-die (K4A8G165WB). Samsung reserves the right to change specifications without notice, so re-check the latest datasheet revision before a production tape-out and qualify any substitute on your actual board.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

Compliance status not stated in the provided web data; consult the official Samsung product page or environmental datasheet for RoHS/REACH declarations.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics K4A8G165WB-BCRC K4A8G165WB-BCPB K4A8G165WB-BCTD K4A8G165WB-BCWE K4A4G165WD-BCRC DDR4 SDRAM DRAM synchronous dynamic random-access memory B-die FBGA-96 PBGA96 512M x 16 2400 Mbps DDR4-2400 CRC dynamic ODT ZQ calibration auto precharge JEDEC RoHS industrial control network communication equipment memory controller 1.2 V VDD
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