K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung
MPN: K9HUGY8J5B-BCK0 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K9HUGY8J5B-BCK0 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K9FGGY8J5A-BCK0
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →K9HQGY8S5M
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →K9PRGY8S7M-CCK0
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →K9DVGY8J5M
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1 / Unit
View Datasheet →K9HUGY8J5B-BCK0 Maximum Ratings & Electrical Characteristics
| Manufacturer | Samsung Electronics |
| Product Family | K9HUG (V-NAND flash) |
| Memory Type | NAND Flash (3D V-NAND) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
K9HUGY8J5B-BCK0 [data_needed: package code, e.g. fbga] Pin Configuration Guide
Complete pinout information for K9HUGY8J5B-BCK0 ([data_needed: package code, e.g. fbga] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: package code, e.g. fbga] package pinout diagram for K9HUGY8J5B-BCK0](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K9HUGY8J5B-BCK0.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K9HUGY8J5B-BCK0 is suitable for 6 applications: Solid-State Drives (SSD), Embedded Multimedia Cards (eMMC), USB Flash Drives, Smart TV and Set-Top Box Storage, Automotive Infotainment Storage, Industrial Embedded Systems.
Solid-State Drives (SSD)
The K9HUGY8J5B-BCK0's 3D V-NAND technology and high per-die density make it a strong fit for client and enterprise SSD designs, where cost per gigabyte and sustained write performance are the primary metrics. Samsung V-NAND's vertical cell stacking improves endurance versus planar TLC, allowing SSD controllers to meet typical 5-year workload warranties. In an SSD, multiple K9HUG dies share an 8-bit or 16-bit channel to a Samsung- or third-party SSD controller that implements LDPC ECC, wear leveling, and FTL management. Channel count and die-per-channel allocation determine sequential throughput; the trade-off is that TLC V-NAND requires strong ECC overhead that consumes controller silicon area. Confirm this ordering code's exact density and interface mode from the Samsung datasheet before channel design.
Recommended
Embedded Multimedia Cards (eMMC)
Raw V-NAND dies such as the K9HUGY8J5B-BCK0 are the storage building blocks inside eMMC and UFS modules, where a controller wraps the NAND in a managed JEDEC interface. Using Samsung's K9HUG family gives module makers a stable, high-density TLC source with consistent page/block organization across the generation, simplifying controller firmware qualification. In an eMMC module the NAND sees the module controller's LDPC ECC and garbage collection, so raw endurance specs translate directly into module P/E-cycle ratings. Designers should verify that the module controller supports this NAND generation's timing registers and identification data. Because eMMC pins out only the managed interface, the NAND's FBGA ball map never reaches the end-product PCB, reducing layout risk.
Recommended
USB Flash Drives
Cost-sensitive USB flash drive designs use high-density TLC V-NAND like the K9HUGY8J5B-BCK0 to maximize capacity per package while keeping the controller cheap. Samsung V-NAND's stacked-cell architecture delivers the lowest cost per bit in the industry, which is critical in the commodity USB drive market with thin margins. The USB controller pairs one or two NAND dies with a USB 3.x bridge implementing ECC and wear leveling; the K9HUG family's toggle or asynchronous interface compatibility with mainstream USB controller vendors reduces qualification effort. The main design consideration is thermal: sustained writes on TLC NAND in a small enclosure raise junction temperature, so the datasheet's temperature limits and derating guidance must be respected to preserve endurance and data retention.
Recommended
Smart TV and Set-Top Box Storage
Smart TVs and set-top boxes need 8-64 GB of non-volatile storage for firmware, apps, and DVR buffering, making high-density TLC V-NAND like the K9HUGY8J5B-BCK0 the economical raw-media choice. Samsung V-NAND offers the read-latency consistency that matters for responsive app launching, and its endurance comfortably covers the write-once-read-mostly profile of firmware plus the moderate write load of DVR buffering. In these products the NAND typically hangs off an SoC-integrated NAND controller or a small eMMC-style managed solution. Layout should keep the NAND clock/data lines short and impedance-controlled to meet toggle-mode timing. Verify the SoC's NAND driver supports this generation's ONFI/toggle parameter page before committing the BOM.
Recommended
Automotive Infotainment Storage
Automotive infotainment and navigation systems require multi-gigabyte storage over an extended -40C to +85C (often wider) environment, and Samsung V-NAND families including the K9HUG series provide the density and quality base for such designs. In automotive builds the NAND is almost always integrated into an AEC-Q100-qualified managed module (eMMC/UFS automotive grade), with the raw K9HUG die qualified inside the module. Designers benefit from Samsung's vertical integration: NAND, controller, and module come from one vendor with consistent firmware. Key considerations are extended-temperature data retention, power-fail integrity during cranking events, and long-term supply commitments - register for Samsung PCNs and negotiate last-time-buy terms because V-NAND generations cycle every two to three years.
Recommended
Industrial Embedded Systems
Industrial controllers, gateways, and data loggers use high-density NAND like the K9HUGY8J5B-BCK0 for local logging and firmware storage, typically within an industrial-grade managed flash module. Samsung V-NAND's endurance and retention characteristics, combined with industrial controllers implementing strong LDPC ECC and power-fail protection, deliver the 10+ year service life industrial products require. The wide operating envelope and shock/vibration tolerance of BGA-packaged NAND (no leads to fatigue) suit harsh environments. Designers must implement brown-out detection and capacitor ride-through to protect in-flight program/erase operations, since sudden power loss corrupts TLC pages without hardware protection. Confirm the ambient temperature rating of this exact ordering code in the Samsung datasheet, as industrial suffixes differ from consumer ones.
Recommended
Recommended Products Summary
Engineering reference data for K9HUGY8J5B-BCK0 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9FGGY8J5A-BCK0 | K9HQGY8S5M | K9PRGY8S7M-CCK0 | K9DVGY8J5M |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | [DATA_NEEDED: FBGA ball count/pitch] | FBGA (fine-pitch BGA) | FBGA (fine-pitch BGA) | FBGA (fine-pitch BGA) | FBGA (fine-pitch BGA) |
| Memory Technology | 3D V-NAND | 3D V-NAND | 3D V-NAND | 3D V-NAND | 3D V-NAND |
| Density | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage (VCC) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Interface Mode | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Endurance (P/E Cycles) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | Active (verify on Samsung product page) | Active (listed on XAIPART) | Active (listed on XAIPART) | Active (listed on XAIPART) | Active (listed on XAIPART) |
Key Differentiators
- Latest-generation Samsung V-NAND process (vs K9DVGY8J5M)
- Samsung single-vendor ecosystem (vs Cross-brand NAND (Micron/SK Hynix/Kioxia))
- TLC V-NAND cost-per-bit economics (vs SLC/older-planar Samsung parts (K9HCG08U1M))
Design Notes
The K9HUGY8J5B-BCK0 is a fine-pitch BGA NAND, so plan the fanout before routing: verify ball pitch from the Samsung package drawing, use via-in-pad with filled vias or short dogbones for escape, and follow IPC-recommended BGA land-pattern geometry. Place 100 nF ceramic decoupling capacitors within 2 mm of each VCC/VCCQ ball pair, plus one bulk 10 uF capacitor per supply rail. Keep the NAND data bus traces matched in length and impedance-controlled (typically 50 ohm single-ended) when the device operates in toggle-DDR mode.
Respect the datasheet power-up sequence for VCC and VCCQ: powering the I/O rail before the core rail can place the NAND in an undefined state or cause excess inrush. Estimated: TLC V-NAND program current peaks of tens of mA per die (see datasheet IDD values) mean the core rail regulator must handle simultaneous multi-die program bursts without drooping below the minimum VCC - size bulk capacitance for the worst case of all dies programming concurrently.
Raw V-NAND has no internal ECC, wear leveling, or bad-block management - connecting it directly to a processor without an FTL causes rapid data corruption. The controller must implement LDPC ECC at the strength specified for TLC in the Samsung datasheet, plus wear leveling and power-fail recovery. Also note that ordering-code suffixes (BCK0 here) encode speed grade and package; do not substitute codes without comparing the ball map and AC timing tables page by page.
NAND program/erase operations are localized heat sources; in multi-die SSD or USB designs, sustained writes can push the die well above ambient. Estimated: BGA packages on a multilayer PCB dissipate heat mainly through the ball array into the board, so a solid ground plane under the package acts as the primary heat spreader. Derate sustained write throughput or add airflow when the enclosure prevents board-level heat spreading, and honor the datasheet's maximum junction temperature for reliability.
Compliance Information
RoHS compliance typical of current Samsung NAND ordering codes; download Samsung's material declaration for this exact code for REACH, halogen, and conflict-minerals status.
