K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung
MPN: K4RAH086VB-BCWM ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.95 | $4.95 |
| 10 | $4.55 | $45.50 |
| 100 | $4.15 | $415.00 |
| 500 | $3.9 | $1,950.00 |
| 1,000 | $3.65 | $3,650.00 |
Drop-in alternatives for K4RAH086VB-BCWM — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4RAH086VB-BCQK
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View Datasheet →K4RAH086VB-BIWM
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View Datasheet →K4RAH086VP-BCWM
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View Datasheet →K4RAH086VE-BCWM
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$7.6 / Unit
View Datasheet →K4RHE086VB-BCWM
✅ Drop-In✓ In Stock
$7.65 / Unit
View Datasheet →K4RAH086VB-BCWM Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Density | 16 Gb |
| Organization | 2G x 8 |
| Data Rate | 5600 Mbps |
| Supply Voltage | 1.1 V |
| Interface | DDR5 (JEDEC DDR5 interface) |
| Package | FBGA-82 |
| Mounting Type | Surface Mount |
| Memory Format | Volatile (DRAM) |
| Speed Grade Code | BCWM |
| Burst Length | 16 (DDR5) |
| Operating Mode | DLL Enabled mode (per datasheet) |
| On-Die Termination | Yes (ODT) |
K4RAH086VB-BCWM fbga-82 Pin Configuration Guide
Complete pinout information for K4RAH086VB-BCWM (fbga-82 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4RAH086VB-BCWM.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RAH086VB-BCWM is suitable for 6 applications: DDR5 RDIMM Server Memory Modules, Networking Switch Line-Card Memory, Workstation and Desktop UDIMM, High-Performance Embedded Compute, Test, Measurement and Validation Platforms, DDR5 Module Contract Manufacturing and Second Sourcing.
DDR5 RDIMM Server Memory Modules
The K4RAH086VB-BCWM fits DDR5 RDIMM module designs where 16Gb density at 5600 Mbps lets a 16GB rank be built from eight x8 devices, keeping chip count and bus loading low. In an RDIMM topology the component sits behind a registered clock driver (RCD) and SPD hub; its 5600 Mbps capability matches mainstream PC5 server memory segments, while 1.1V operation and DDR5 on-die power management reduce module power versus DDR4 by roughly 30% in efficiency terms. Designers must follow Samsung's DFE and ODT settings in the component datasheet to close signal integrity across two ranks at 5600 Mbps. For ECC-heavy designs, the companion K4RBH046VM-BCWM (4G x 4) is often chosen instead because x4 width maximizes ECC granularity in 72-bit server buses.
Recommended
Networking Switch Line-Card Memory
High-port-count switching and routing platforms use DDR5 SDRAM as control-plane and deep-buffer memory. The K4RAH086VB-BCWM's 5600 Mbps data rate provides the burst bandwidth needed by modern packet-buffer architectures, and its 16Gb (2G x 8) organization scales line-card memory in 2GB-per-eight-device increments. Because these cards run continuously, the component's 1.1V operation lowers steady-state rail power and simplifies the VRM design versus DDR4-era 1.2V parts. Layout should keep DQ/DQS length matching within the datasheet tolerance and apply the CA compliance mask voltages specified by Samsung; the DLL-enabled operating mode must be active for the published 5600 Mbps timing. Companion Samsung parts on the site list, such as the K4RAH086VP-BCWM, provide die-revision second sources within the same footprint.
Recommended
Workstation and Desktop UDIMM
Unbuffered desktop and workstation modules commonly use x8 DDR5 components, and the K4RAH086VB-BCWM provides 16Gb granularity so a single-rank 16GB UDIMM needs only eight devices. At 5600 Mbps it supports mainstream DDR5 memory bins used by current-generation CPUs and chipsets, while DDR5's split CA buses reduce command loading on high-density modules. The device's on-die features (ODT, DFE) ease 5600 Mbps fly-by routing with fewer termination components than DDR4. Firmware teams should validate memory-training compatibility with the chosen memory controller, since training tables are keyed to specific die revisions (VB here). The K4RAH086VB-BIWM industrial variant is useful for workstation SKUs sold into harsh-environment or extended-duty applications.
Recommended
High-Performance Embedded Compute
Advanced embedded controllers, edge AI gateways, and industrial compute modules increasingly adopt DDR5 for its bandwidth-per-watt advantage. The K4RAH086VB-BCWM's 5600 Mbps rate and 16Gb density let a compact 2GB-16GB memory subsystem be built around a handful of FBGA-82 devices, conserving board area on COM Express or SMARC-class carriers. Its 1.1V supply integrates cleanly with modern PMIC buck outputs designed for DDR5 rails. For industrial deployments, prefer the K4RAH086VB-BIWM coding, which preserves the identical 16Gb/5600 Mbps/x8 electrical specification with industrial process grading. Follow the Samsung datasheet for ZQ calibration resistor placement and power-rail sequencing, and budget layout effort for length-matched fly-by CA routing to sustain 5600 Mbps training margins.
Recommended
Test, Measurement and Validation Platforms
DDR5 characterization platforms and memory-qualification fixtures use discrete 16Gb components like the K4RAH086VB-BCWM to exercise controllers at 5600 Mbps. The part's defined CA/CS compliance mask (single-data-rate command operation) and DLL-enabled timing tables make it a well-behaved DUT for probe-based SI validation, and its x8 width keeps DQ scope channels manageable. Because die revisions (VB, VP, VE) differ subtly in training behavior, labs building golden-sample suites should stock multiple family codes, including K4RAH086VP-BCWM, to characterize corner cases. Samsung's 16Gb B-die specification Rev 1.0 family document provides the timing-parameter set used for these fixtures. Devices sourced through XAIPART arrive as components for direct solder-down onto validation boards rather than module form factors.
Recommended
DDR5 Module Contract Manufacturing and Second Sourcing
Module OEMs and contract manufacturers building DDR5 SODIMM/UDIMM products require at least two qualified sources per die generation to survive allocation cycles. The K4RAH086VB-BCWM pairs with K4RAH086VB-BCQK and K4RAH086VB-BIWM as functionally identical drop-ins on the same FBGA-82 footprint, allowing a single PCB artwork to qualify multiple Samsung codes without respin. Because BIOS/EEPROM training tables reference die revision codes, qualification should include memory-training runs on each suffix across the supported CPU population; this is typically days of bench work versus weeks for a cross-brand redesign. Stock visibility matters too: broker levels of roughly 5,000-49,000 pcs were reported in August-September 2026 across icDirectory, Octopart Canada, and Wolfchip, indicating healthy short-term availability for the BCWM code.
Recommended
Recommended Products Summary
Engineering reference data for K4RAH086VB-BCWM — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RAH086VB-BCQK | K4RAH086VB-BIWM | K4RAH086VP-BCWM | K4RAH086VE-BCWM | K4RHE086VB-BCWM |
|---|---|---|---|---|---|---|
| Package | FBGA-82 | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Data Rate | 5600 Mbps | 5600 Mbps | 5600 Mbps | 5600 Mbps | 5600 Mbps | [DATA_NEEDED] |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Temperature / Process Coding | BC (commercial) | BC (commercial) | BI (industrial) | BC (commercial) | BC (commercial) | BC (commercial, RHE family) |
| Drop-in Compatibility | Reference part | Yes - same die, suffix-only difference | Yes - same die, industrial grade | Yes - verify die revision ball-out | Yes - E-die variant | Verify - newer RHE family coding |
| Relative Cost | Baseline (quote-based) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- 5600 Mbps mainstream DDR5 speed bin (vs K4A8G165WB-BCWE (DDR4 16Gb family))
- 16Gb x8 density for low chip-count ranks (vs K4RBH046VM-BCWM (4G x 4))
- Same-die suffix family enables dual sourcing (vs K4RAH086VB-BCQK / K4RAH086VB-BIWM)
- Mature B-die DDR5 component documentation (vs K4RHE086VB-BCWM (RHE family))
Design Notes
At 5600 Mbps, DQ/DQS length matching and ODT calibration dominate training margin. Follow the Samsung 16Gb B-die DDR5 component datasheet (Rev 1.0 family) for fly-by CA routing, ZQ calibration resistor placement, and DFE receiver settings. Route all x8 DQ groups as length-matched pairs to their DQS_t/DQS_c pairs and keep stubs minimal; verify the CA/CS signals meet the single-data-rate compliance mask for voltage and timing stated in the datasheet before releasing the PCB.
The device operates from a nominal 1.1V rail with DDR5 on-die power management. Size the VDD/VDDQ buck converter for peak I/O switching current at 5600 Mbps across all ranks and provide proper bulk plus high-frequency decoupling at the BGA power balls. Estimated: eight x8 devices at typical DDR5 16Gb activity can draw multiple amps in aggregate, so a multi-phase or high-current single-phase regulator with remote sensing is recommended; confirm exact current per Samsung's IDD specification tables in the full datasheet.
Never assume suffix interchangeability beyond electrical equivalence: VB/VP/VE denote die revisions whose memory-training behavior may differ in BIOS tables, and BC versus BI codes differ in temperature/process grading. Qualify the exact suffix used in production, keep SPD data aligned with the populated code, and source through traceable distribution - broker-listed 'original genuine' DDR5 components are a known counterfeit category, so require date-code and country-of-origin verification on receipt.
Compliance Information
Compliance statements were not present in the verified web data. Samsung DDR5 consumer/commercial DRAM is typically RoHS compliant, but this must be confirmed from the official Samsung product page or datasheet before release.
