SPP80P06PHXKSA1 - P-Ch 60V 80A 340W TO-220 MOSFET | Infineon
MPN: SPP80P06PHXKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.45 | $3.45 |
| 10 | $3.1 | $31.00 |
| 100 | $2.62 | $262.00 |
| 500 | $2.21 | $1,105.00 |
| 1,000 | $1.95 | $1,950.00 |
SPP80P06PHXKSA1 Overview
A P-channel MOSFET (PMOS) is a voltage-controlled field-effect transistor in which the channel is formed by holes; turning the gate ON requires pulling the gate voltage below the source by at least the threshold voltage VGS(th), which simplifies high-side drive circuits because no charge pump or bootstrap is needed when the source is tied to the supply rail. P-channel MOSFETs sit inside the broader power MOSFET taxonomy (P-channel/N-channel, enhancement-mode/depletion-mode, planar/trench), which in turn belongs to the discrete power semiconductor family (MOSFET -> transistor -> discrete semiconductor -> power management component).
Key features include a low on-state resistance for the voltage class, avalanche-rated single-pulse robustness, an operating junction temperature range of -55 C to +175 C, and a TO-220-3 through-hole footprint with a metal tab that doubles as the drain connection and a thermal mounting surface. The package accepts standard M3 screws and clip-on heatsinks, enabling straightforward thermal management in motor-drive, battery-protection, and power-ORing circuits.
Internally, the device uses a trench-cell structure that minimizes RDS(on) per unit silicon area while keeping gate charge Qg low, so a logic-level gate driver can switch the part at moderate PWM frequencies without excessive driver loss. The body diode supports inductive commutation, simplifying half-bridge and flyback topologies. Compared with an equivalent N-channel MOSFET, this P-channel part eliminates the bootstrap/charge-pump network required for high-side switching, reducing BOM cost and PCB area at the expense of slightly higher RDS(on) at a given die size.
Typical applications include high-side load switching in 12 V / 24 V automotive and industrial systems, reverse-battery protection, DC motor reverse-polarity switching, power-ORing between redundant supplies, USB Type-C VBUS hot-swap switches, and battery management systems (BMS) charge/discharge FETs. The P-channel polarity is particularly attractive when the load sits on the low side and the supply must be switched.
When designing with this device, ensure the gate drive pulls below the source by at least 10 V to fully enhance the channel and minimize conduction loss. The metal tab must be mechanically fastened to a heatsink or copper pour with thermal interface material, because at -80 A the part dissipates substantial heat even at low RDS(on).
This page synthesizes distributor pricing as of 2026-09-14, drop-in TO-220-3 alternatives from the Infineon OptiMOS P-channel family, and practical design notes that complement the manufacturer datasheet rather than restate it.
Drop-in alternatives for SPP80P06PHXKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with SPP80P06PHXKSA1 (same form factor and footprint) β differing in Mounting Type.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
SPP80P06P
β Drop-Inπ Reference alternative (not in catalog)
IPP80P06P
β Drop-Inπ Reference alternative (not in catalog)
SPB80P06P
β Drop-Inπ Reference alternative (not in catalog)
NTP80P06P
β Drop-Inπ Reference alternative (not in catalog)
SUP75P06P
β Drop-Inπ Reference alternative (not in catalog)
SPP80P06PHXKSA1 Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) at TC=25C | -80 A |
| Maximum Power Dissipation (PD) at TC=25C | 340 W |
| Package | PG-TO220-3-1 (TO-220-3, through-hole) |
| Mounting Type | Through Hole |
| Operating Junction Temperature | -55 C to +175 C |
| Technology | OptiMOS P-channel trench MOSFET |
| Number of Pins | 3 |
| RoHS Status | Compliant |
| Standard Package Quantity (Tube) | 50 |
SPP80P06PHXKSA1 Pin Configuration
| Pin 1 | Gate β Gate control input; pull to source (-VGS) to turn on |
| Pin 2 | Drain β Drain terminal; electrically connected to the metal tab on the back of the package |
| Pin 3 | Source β Source terminal; for P-channel high-side switching, tie to the battery/load positive rail |
Typical Applications
SPP80P06PHXKSA1 is suitable for 6 applications: 12 V Automotive High-Side Load Switch, Reverse-Battery Protection Circuit, DC Motor Reverse-Polarity Switch, Battery Management System Charge/Discharge FET, USB Type-C VBUS Hot-Swap Switch, Power-ORing Between Redundant Supplies.
12 V Automotive High-Side Load Switch
The SPP80P06PHXKSA1 -60 V / -80 A P-channel MOSFET simplifies 12 V automotive high-side switching because its source connects to the battery positive and the gate is pulled to ground for ON, eliminating the bootstrap capacitor and high-side gate driver that an equivalent N-channel part would need. With a typical on-state resistance in the low double-digit mOhm range for this voltage class, conduction loss at 30 A continuous stays below 30 W, manageable with a small clip-on heatsink. The -55 C to +175 C operating junction range covers under-hood environments, and the P-channel topology self-extinguishes during reverse-battery events, doubling as reverse-polarity protection without extra components.
Recommended
Reverse-Battery Protection Circuit
Tie the SPP80P06PHXKSA1 source to battery +12 V and the drain to the downstream load. Under normal polarity, pulling the gate to ground turns the MOSFET ON with VGS ~ -12 V, fully enhancing the channel. During a reverse-battery event the source becomes negative relative to ground, so VGS goes positive and the device self-extinguishes, blocking up to -60 V reverse stress. This replaces the conventional Schottky diode + fuse solution with a 15-25 mOhm path that drops only ~0.5 V at 30 A versus the diode's 0.5-0.7 V always-on loss, eliminating chronic dissipation.
Recommended
DC Motor Reverse-Polarity Switch
The SPP80P06PHXKSA1 in a P-channel high-side configuration pairs with an N-channel low-side MOSFET to form a half-bridge that reverses a 12 V or 24 V DC motor. The P-channel device sits on the high side and turns on with a simple gate-to-ground signal, while the N-channel on the low side needs only a logic-level gate drive. At 20 A continuous motor current the MOSFET dissipates roughly 8 W (20^2 * 0.018 Ohms estimated) - well within the 340 W TO-220-3 rating with a small heatsink. The 175 C maximum junction temperature supports stalled-rotor events where dissipation briefly spikes.
Recommended
Battery Management System Charge/Discharge FET
The SPP80P06PHXKSA1 in a back-to-back P-channel configuration isolates a lithium battery pack from the charger and load. Two devices in series block current in both directions when OFF, and the BMS MCU drives both gates to ground to enable conduction. The -60 V rating covers 12-48 V battery stacks with substantial transient headroom for inductive kick from contactor opening. Low RDS(on) reduces charge/discharge path loss, improving battery round-trip efficiency by 1-3% versus discrete PNP bipolar solutions that were historically used in this role.
Recommended
USB Type-C VBUS Hot-Swap Switch
Place the SPP80P06PHXKSA1 between the Type-C VBUS rail and the downstream system load to provide hot-swap insertion control. The P-channel topology simplifies the gate drive - a logic-level signal from the USB PD controller pulls the gate to ground for ON, and a pull-up to VBUS holds the MOSFET OFF when the controller is unpowered. The -60 V VDS rating comfortably tolerates the 20 V maximum PD profile plus inductive ringing on the cable. Slow turn-on (gate resistor 10-100 kOhm) controls inrush current into downstream bulk capacitance.
Recommended
Power-ORing Between Redundant Supplies
Two SPP80P06PHXKSA1 MOSFETs back-to-back OR two redundant 12 V or 24 V supplies, with each source connected to one supply rail and the drains tied to the common load. Forward conduction is automatic (body diode carries the inrush), and the gate of each MOSFET is pulled to its own source, so the higher-voltage supply wins with negligible cross-conduction. This replaces Schottky ORing diodes, dropping the path loss from ~0.5 V to ~0.02 V at 30 A - a 15 W per-channel savings that directly improves system efficiency and reduces heatsink size.
Recommended
Recommended Products Summary
Engineering reference data for SPP80P06PHXKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | SPP80P06P | IPP80P06P | NTP80P06P | SUP75P06P |
|---|---|---|---|---|---|
| Package | TO-220-3 (PG-TO220-3-1) | TO-220-3 (PG-TO220-3-1) - same | TO-220-3 (PG-TO220-3-1) - same | TO-220-3 - same | TO-220-3 - same |
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | onsemi (cross-brand) | Vishay (cross-brand) |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS (max) | -60 V | -60 V | -60 V | -60 V | -60 V |
| Continuous ID at TC=25C | -80 A | -80 A | -80 A | -80 A | -75 A (-6%) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant |
| Tube Quantity | 50 | 50 | 50 | 50 | 50 |
| Source | Verified Web Data (Infineon) | Verified Web Data (Infineon) | Verified Web Data (Infineon) | Verified Web Data (onsemi) | Verified Web Data (Vishay) |
Key Differentiators
- OptiMOS P-channel with high current density in TO-220-3 (vs SUP75P06P (Vishay))
- Same-brand Infineon OptiMOS P-channel family (vs NTP80P06P (onsemi))
- Through-hole TO-220-3 vs surface-mount D2PAK (vs SPB80P06P (Infineon D2PAK))
Design Notes
Estimated: at -30 A continuous and a typical RDS(on) of 18 mOhm for this 60 V OptiMOS class, dissipation is I^2 * R = 900 * 0.018 = 16.2 W. A TO-220-3 with no heatsink has junction-to-ambient thermal resistance ~62 C/W, which would push junction temperature rise above 1000 C - clearly not viable. Mount the metal tab to a 5 C/W clip-on heatsink (Wakefield 637 or equivalent) using thermal compound; the rise becomes 16.2 * 5 = 81 C above ambient, keeping the junction below the 175 C rating even at TA = 50 C.
Because the metal tab is electrically tied to the drain, mounting the part on a heatsink ties the heatsink to drain potential. If the heatsink must float (e.g., it sits near other circuitry), use a 0.05 mm mica pad or silicone insulator with a nylon shoulder washer and bushing to isolate the tab. Without isolation the heatsink becomes a live terminal that can short to adjacent components or cause a chassis ground fault. Apply a thin (50-100 micron) layer of thermal compound on both sides of the insulator to maintain heat transfer.
Do not assume a 5 V logic-level gate drive is sufficient - this part typically needs VGS ~ -10 V for full enhancement at -80 A. A 5 V drive leaves the MOSFET in the linear region, with RDS(on) several times the datasheet headline value, causing severe overheating. Use a gate driver or pull the gate to ground through a resistor when the source sits at 12 V. Also, add a 10 kOhm gate-source resistor to keep the gate defined when the controller is unpowered - otherwise leakage currents can partially enhance the device and create a sneak power path.
Keep the high-current drain loop area minimal to reduce parasitic inductance that causes voltage spikes during turn-off. Place a freewheeling diode or TVS clamp directly across an inductive load, with leads as short as possible. Use a ground plane on the source side to give the gate-drive return a low-inductance path; a 1 cm gate-return trace adds ~10 nH, which during 10 ns switching creates 10 V ringing that can falsely re-trigger the gate.
Compliance Information
RoHS and REACH compliance per Infineon product page; halogen-free status not explicitly stated in the verified web snippet and marked unknown. The part is industrial-grade; an automotive-grade equivalent in the OptiMOS family would carry the AEC-Q101 qualification.
