Memory ICs
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Products (183)
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
The Micron MT41K256M16HA-15EM:E is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V. It is a low-voltage version of DDR3, designed for power-sensitive applications while maintaining high performance. The device is housed in a 96-ball FBGA package (9x14mm) and supports data rates up to 1333 Mbps (DDR3L-1333) with a CAS latency of 15. It is part of Micron's DDR3L family, offering a balance of speed, density, and power efficiency. DDR3L SDRAM is a type of dynamic random-access memory that operates at 1.35V, reducing power consumption by about 15% compared to standard DDR3 (1.5V). It is widely used in mobile devices, embedded systems, and networking equipment where power efficiency is critical. DDR3L is backward compatible with DDR3, allowing it to run in 1.5V mode when needed, as noted in the datasheet. Key features include a 4Gb density, 16-bit data bus, 1.35V core power supply, and support for 1.5V operation. The device offers a burst length of 8, on-die termination (ODT), and programmable CAS latency. It is RoHS compliant and lead-free, making it suitable for environmentally conscious designs. Technically, the MT41K256M16HA-15EM:E uses Micron's advanced DRAM process technology, providing high reliability and performance. The 96-ball FBGA package ensures compact footprint and good thermal characteristics. The device supports a wide operating temperature range, making it suitable for industrial applications. Typical applications include networking equipment, servers, embedded computing, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it ideal for designs where power and space are constrained. When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and careful termination of the address/control lines.
MT41K256M16HA-187EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
The Micron MT41K256M16HA-187EM:E is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 1866 MT/s (CL13). It is housed in a 96-ball FBGA package (9x14mm) and is designed for high-performance computing, networking, and industrial applications requiring low power and high bandwidth. DDR3L SDRAM (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is backward compatible with DDR3, allowing operation in 1.5V mode when needed. Key features include a 16n prefetch architecture, on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). The device supports auto-refresh and self-refresh modes, and includes a temperature-compensated self-refresh (TCSR) for reduced power in idle states. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm. The MT41K256M16HA-187EM:E operates over a temperature range of 0°C to +95°C (TC) and is RoHS compliant. It features a 1.35V core and I/O supply, with a VDDQ of 1.35V. The device is compatible with JEDEC DDR3L standards, ensuring interoperability with a wide range of controllers. Typical applications include servers, networking equipment, industrial PCs, and embedded systems where low power and high density are critical. The 4Gb density and x16 organization make it ideal for memory modules and systems requiring 256M x 16 configuration. When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines in the Micron datasheet to minimize signal integrity issues. The device supports a 1.5V compatible mode, allowing it to be used in systems designed for standard DDR3.
MT41K256M16LY-107 - 4Gbit DDR3L SDRAM 933MHz | Micron
The Micron MT41K256M16LY-107 is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at a clock speed of 933 MHz with a CAS latency of 20 ns. It is housed in a 96-ball FBGA package (7.5x13.5 mm) and supports both 1.35V (DDR3L) and 1.5V (DDR3) operation, making it suitable for a wide range of computing and embedded applications. DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in servers, laptops, and industrial systems due to its high bandwidth and cost-effectiveness. Key features include a 4Gbit density, 16-bit data bus, 933 MHz clock speed, and a 20 ns CAS latency. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto-refresh and self-refresh modes for low-power standby, making it ideal for battery-powered devices. Technically, the MT41K256M16LY-107 uses Micron's advanced DRAM process technology, offering high reliability and performance. It supports a data rate of 1866 MT/s (megatransfers per second) with a 16n prefetch architecture. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing data integrity in varying thermal conditions. Typical applications include main memory in laptops, servers, networking equipment, and industrial PCs. Its low-voltage operation makes it particularly suitable for energy-efficient designs, while the high density supports memory-intensive applications like virtualization and data analytics. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to minimize signal integrity issues. The device supports both 1.35V and 1.5V operation, but the voltage must be consistent across all memory devices in the system.
MT41K256M16LY-107:N - 4Gbit DDR3L SDRAM 933MHz | Micron
The Micron MT41K256M16LY-107:N is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at a clock frequency of 933 MHz with a CAS latency of 13 (CL=13) and an access time of 20 ns. It is housed in a 96-ball FBGA package (7.5x13.5 mm) and operates from a 1.35V supply, making it ideal for low-power applications. This memory device supports parallel data transfer and is designed for high-bandwidth computing, networking, and embedded systems. DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high throughput. DDR3L is commonly used in laptops, servers, and industrial applications where energy efficiency is critical. Key features include a 4Gbit density, 16-bit data bus width, 933 MHz maximum clock frequency, and a 20 ns access time. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It operates over a temperature range of 0°C to 95°C (case temperature) and is RoHS compliant. The 96-ball FBGA package offers a compact footprint suitable for space-constrained designs. Technically, the MT41K256M16LY-107:N uses Micron's advanced DRAM process technology, providing high reliability and performance. It features a 1.35V core and I/O supply, with a self-refresh mode for low-power standby. The device supports DLL (Delay-Locked Loop) for precise timing and includes programmable read and write latencies. Its architecture allows for efficient burst operations, making it suitable for high-speed data processing. Typical applications include DDR3L memory modules for laptops and ultrabooks, networking equipment such as routers and switches, embedded systems for industrial automation, and high-performance computing platforms. Its low voltage and high density make it ideal for power-sensitive designs. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to maintain signal integrity at 933 MHz. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
MT41K256M16MTW-107IT - 4Gb DDR3L SDRAM 933MHz | Micron
The Micron MT41K256M16MTW-107IT is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at a clock speed of 933 MHz (DDR3L-1866) with a CAS latency of 13. It is housed in a 96-ball FBGA package (8x14 mm) and operates from a 1.35V supply, making it suitable for low-power applications. The device supports industrial temperature range from -40°C to +95°C, ensuring reliable operation in harsh environments. DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20%. It is part of the DDR3 memory family, which uses an 8n-prefetch architecture to achieve high bandwidth. DDR3L is commonly used in servers, networking equipment, and embedded systems where power efficiency is critical. Key features include a 16-bit data bus, 4Gbit density, 933 MHz clock speed, and a 20 ns row cycle time. The device supports auto self-refresh, auto precharge, asynchronous reset, output enable, dynamic on-chip termination (DTC), ZQ calibration, and write leveling. These features enhance signal integrity and simplify system design. The MT41K256M16MTW-107IT uses a CMOS process and is designed for high-speed data transfer with low power consumption. The 96-ball FBGA package provides excellent thermal and electrical performance, and the industrial temperature rating ensures operation in extreme conditions. The device is RoHS compliant and lead-free. Typical applications include industrial computing, networking routers, telecommunications equipment, and embedded systems that require high-density, low-power memory. The 1.35V operation makes it ideal for battery-powered devices and energy-efficient data centers. When designing with this memory, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper on-die termination calibration.
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
The Micron MT41K256M16RE-125:D is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 1600 MT/s (DDR3L-1600). It comes in a 96-ball FBGA package (9x14mm) and is lead-free and RoHS compliant. This component is designed for high-performance computing, networking, and industrial applications requiring low power consumption and high memory density. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is backward compatible with DDR3 and is widely used in servers, laptops, and embedded systems. Key features include a 4Gb density, 256Mx16 organization, 1.35V supply voltage, and a CAS latency of 11 (CL11) at 1600 MT/s. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto-refresh and self-refresh modes for power saving. The FBGA-96 package offers excellent thermal and electrical performance, making it suitable for space-constrained designs. Technically, the MT41K256M16RE-125:D uses Micron's advanced DRAM process technology, providing high reliability and low leakage. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing data integrity. The 1.35V operation reduces I/O power, and the 96-ball FBGA package with a 0.8mm ball pitch ensures good signal integrity. Typical applications include DDR3L memory modules for servers, networking equipment, industrial PCs, and embedded systems. It is also used in consumer electronics like set-top boxes and routers. The low voltage and high density make it ideal for power-sensitive designs. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for the I/O.
MT41K256M16RE-15E:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
The Micron MT41K256M16RE-15E:D is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 667 MHz (DDR3L-1333). It is housed in a 96-ball FBGA (10x14mm) package and is designed for low-power applications requiring high memory density and bandwidth. DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 15% compared to standard 1.5V DDR3. It is part of the DDR3 SDRAM family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical. Key features include a 4Gb density, 16-bit data bus, 667 MHz clock speed (PC3L-10600), and an access time of 13.5 ns. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It operates over a temperature range of -40°C to 95°C (TC) for the industrial variant, making it suitable for harsh environments. The MT41K256M16RE-15E:D uses a 30nm DRAM process technology, enabling high density with low power. It features a 1.35V core and I/O supply, with a separate VDDQ for improved signal integrity. The device includes auto-refresh and self-refresh modes for power saving, and supports DLL (delay-locked loop) for precise timing. Typical applications include embedded computing, networking equipment, industrial automation, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive designs that require large memory capacity. When designing with this device, ensure proper decoupling of the VDD and VDDQ pins with 0.1uF and 1uF capacitors. The DDR3L interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance.
MT41K256M16TG-125 - 4Gb DDR3L SDRAM 800MHz | Micron
The Micron MT41K256M16TG-125 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 800 MHz (DDR3L-1600). It is housed in a 96-ball FBGA package (8x14mm) and is designed for low-power applications requiring high memory density and bandwidth. DDR3L SDRAM is a low-voltage variant of DDR3 memory, operating at 1.35V instead of the standard 1.5V, reducing power consumption by approximately 20% while maintaining compatibility with DDR3 systems. It is part of the DRAM memory hierarchy, positioned between DDR3 and DDR4, and is widely used in computing, networking, and embedded systems. Key features include a parallel interface with 800 MHz clock speed, 20 ns access time, and support for 1.35V operation with 1.5V compatibility mode. The device offers burst lengths of 8 and 4, on-die termination (ODT), and programmable CAS latency. Its low voltage operation makes it ideal for power-sensitive applications such as laptops, servers, and industrial electronics. The MT41K256M16TG-125 utilizes Micron's advanced DRAM process technology, providing high reliability and performance. The 96-ball FBGA package ensures excellent thermal and electrical characteristics, with a compact footprint suitable for space-constrained designs. The device supports standard DDR3L features including auto-refresh, self-refresh, and partial array self-refresh for enhanced power management. Typical applications include main memory for embedded systems, networking equipment, and industrial computing. Its high density and low power make it suitable for applications requiring large memory capacity with minimal energy consumption. When designing with this device, ensure proper decoupling and signal integrity practices are followed. The 1.35V supply should be regulated accurately, and the memory controller must be configured for DDR3L timing parameters.
MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
The Micron MT41K256M16TW-093 is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at a clock frequency of 1.066 GHz (DDR3L-2133) with a CAS latency of 14. It is housed in a 96-ball FBGA (8x14mm) package and operates from a 1.35V supply, with compatibility for 1.5V DDR3 operation. This memory IC features a parallel interface with a data rate of 2133 MT/s and an access time of 20 ns. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock, achieving high bandwidth. It is a low-voltage variant of DDR3, operating at 1.35V instead of 1.5V, reducing power consumption by about 15% while maintaining similar performance. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, each generation offering higher speed and lower power. In a system hierarchy, DDR3L SDRAM sits between the memory controller (often integrated in the CPU or SoC) and the system bus, providing temporary data storage for active processes. Key features include a 4Gbit density, 16-bit data bus width, 1.35V core voltage, and support for auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (DTC), ZQ calibration, and write leveling. These features enhance signal integrity and power efficiency, making it suitable for high-performance computing and mobile applications. The device also supports a temperature range of 0°C to +95°C (TC) for standard operation, with an industrial temperature variant available. Technically, the MT41K256M16TW-093 uses a 30nm-class process technology, enabling high density and low power. It incorporates on-die termination (ODT) to improve signal quality on the memory bus, and its ZQ calibration feature allows precise impedance matching. The device is designed for reliable operation in demanding environments, with a mean time between failures (MTBF) that meets industry standards. Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory bandwidth and low power are critical. Its 1.35V operation makes it ideal for power-sensitive designs, such as laptops and portable devices, while its high speed supports data-intensive tasks like real-time analytics and virtualization. When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise, and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 2133 MT/s. The device requires a stable 1.35V supply and careful termination of the address/control bus.
MT41K256M16TW-093:P - 4Gbit DDR3L SDRAM 256Mx16 | Micron
The Micron MT41K256M16TW-093:P is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a maximum clock frequency of 1.066 GHz and an access time of 20 ns. It comes in a 96-ball FBGA (8x14) package, offering high-density memory for computing and embedded systems. DDR3L SDRAM is a low-voltage variant of DDR3 memory, designed to operate at 1.35V while remaining backward-compatible with standard 1.5V DDR3. This reduction in voltage significantly lowers power consumption, making it ideal for power-sensitive applications such as laptops, servers, and industrial electronics. DDR3L is part of the DDR SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, effectively doubling throughput. Key features include a differential bidirectional data strobe, 8n-bit prefetch architecture, on-die termination (ODT), and ZQ calibration. The device supports auto self-refresh, auto precharge, asynchronous reset, and write leveling, ensuring reliable operation in high-speed systems. The 1.35V operation reduces power dissipation by up to 20% compared to standard DDR3, making it suitable for energy-efficient designs. The MT41K256M16TW-093:P utilizes Micron's advanced DRAM process technology, providing high-speed data transfer with low latency. The 8n-prefetch architecture enables burst lengths of 8, improving memory bandwidth efficiency. The device also features dynamic on-chip termination, which adjusts termination impedance during writes to improve signal integrity, and write leveling for improved timing margins in multi-rank systems. Typical applications include DDR3L memory modules for laptops, servers, networking equipment, and embedded systems. Its 4Gbit density and x16 organization make it ideal for applications requiring high memory capacity with a narrow bus, such as industrial PCs, routers, and test equipment. The 1.35V operation is particularly beneficial in battery-powered devices where power efficiency is critical. When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The FBGA package requires careful PCB layout to maintain signal integrity at high frequencies. Refer to the Micron DDR3L datasheet for detailed timing and layout guidelines.
MT41K256M16TW-107 - 4Gb DDR3L SDRAM 933MHz | Micron
The Micron MT41K256M16TW-107 is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at a clock frequency of 933 MHz (DDR3L-1866) with a CAS latency of 20 ns. It is housed in a 96-ball FBGA (8x14) package and operates from a 1.35V low-voltage supply, making it ideal for power-sensitive applications. This memory IC supports parallel interface and includes features such as auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, and ZQ calibration. DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock, doubling the data rate. It operates at 1.35V, reducing power consumption by about 15% compared to standard 1.5V DDR3, while maintaining compatibility with DDR3 sockets. DDR3L is part of the JEDEC DDR3 family and is widely used in computing, networking, and embedded systems where power efficiency and high bandwidth are critical. Key features include a 4Gbit density, 16-bit data bus, 933 MHz clock speed, and 20 ns access time. The device supports industrial temperature ranges in certain variants (e.g., -40°C to +105°C for the AIT grade) and is RoHS compliant. The 96-ball FBGA package offers a compact footprint suitable for space-constrained designs. Technically, the MT41K256M16TW-107 uses Micron's advanced DRAM process technology, providing high reliability and performance. It supports on-die termination (ODT) and dynamic ODT for improved signal integrity, and includes ZQ calibration for precise impedance matching. The device is designed to meet JEDEC DDR3L standards, ensuring interoperability with a wide range of controllers. Typical applications include embedded computing platforms, networking equipment, telecom infrastructure, industrial systems, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it suitable for battery-powered devices and high-performance computing. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ, and the reference voltage (VREF) should be carefully routed.
MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron
The Micron MT41K256M16TW-107:P is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at a clock frequency of 933 MHz (DDR3L-1866) with a CAS latency of 13. It is housed in a 96-ball FBGA (8x14mm) package and operates from a 1.35V supply, with an I/O voltage of 1.35V. This memory device supports a data rate of 1866 MT/s and features a burst length of 8, with a 20ns tRCD and 20ns tRP. It is designed for high-performance computing, networking, and industrial applications requiring low power consumption and high bandwidth. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in servers, laptops, and embedded systems. DDR3L is backward compatible with DDR3 slots, making it a versatile choice for upgrades and new designs. Key features include a 4Gbit density, 16-bit data bus, 933 MHz clock speed, and support for JEDEC-standard DDR3L-1866 timing. The device includes auto self-refresh, auto precharge, write leveling, dynamic on-chip termination (ODT), and ZQ calibration, ensuring signal integrity and reliable operation. It operates over a temperature range of 0°C to +95°C, making it suitable for commercial and industrial environments. Technically, the MT41K256M16TW-107:P uses a high-performance CMOS process and features a programmable CAS latency of 11, 12, 13, and 14, with a burst length of 8 and burst chop of 4. It supports on-die termination (ODT) for improved signal integrity and includes a DLL for precise clock alignment. The device is RoHS compliant and lead-free, meeting environmental standards. Typical applications include high-performance computing, networking equipment, industrial automation, and embedded systems where low power and high bandwidth are critical. Its 1.35V operation reduces thermal load, making it ideal for compact, power-sensitive designs. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and careful termination of the address/control lines.
MT41K256M16TW-107IT - 4Gb DDR3L SDRAM 933MHz | Micron
The Micron MT41K256M16TW-107IT is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 933 MHz (DDR3L-1866). It comes in a 96-ball FBGA (8x14mm) package and is designed for industrial temperature range (-40°C to +95°C). This memory IC is widely used in networking, embedded computing, and industrial applications where high density and low power are critical. DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is backward compatible with DDR3 slots in many systems, making it a popular choice for upgrades and new designs. Key features include a parallel interface with 16-bit data bus, 20ns access time, and support for auto self-refresh, auto precharge, asynchronous reset, output enable, dynamic on-chip termination (ODT), ZQ calibration, and write leveling. These features enhance signal integrity and simplify system design. The industrial temperature range ensures reliable operation in harsh environments. The MT41K256M16TW-107IT uses Micron's advanced CMOS process technology, offering high density and low power. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs. The device supports JEDEC-standard DDR3L timing, ensuring compatibility with a wide range of controllers. Typical applications include networking equipment (routers, switches), embedded systems, industrial PCs, and test and measurement instruments. Its high density and low voltage make it ideal for memory-intensive applications where power efficiency is important. When designing with this device, ensure proper decoupling and follow the layout guidelines in the datasheet to maintain signal integrity at 933 MHz. The industrial temperature grade requires adequate thermal management to keep the junction temperature within specified limits.
MT53B256M32D1NP-062 - 8Gb LPDDR4 SDRAM 1.6GHz | Micron
The Micron MT53B256M32D1NP-062 is a high-performance Mobile LPDDR4 SDRAM memory IC with a density of 8Gbit (256M x 32), operating at a clock speed of 1.6 GHz. It is housed in a 200-ball WFBGA package measuring 10x14.5 mm, designed for space-constrained mobile and embedded applications. This device supports a supply voltage of 1.1V (VDD1) and 1.8V (VDD2), with I/O voltage at 1.1V, ensuring low power consumption critical for battery-powered devices. LPDDR4 (Low Power Double Data Rate 4) is a type of synchronous DRAM optimized for mobile devices, offering high bandwidth and low power consumption compared to standard DDR4. It is part of the memory hierarchy that includes LPDDR3, LPDDR4, and LPDDR5, with LPDDR4 providing a balance of performance and efficiency for smartphones, tablets, and embedded systems. The MT53B256M32D1NP-062 is a key component in the memory subsystem, enabling fast data access for processors and accelerators. Key features include a 32-bit data bus, 1.6 GHz data rate (LPDDR4-3200), and support for deep power-down and self-refresh modes to minimize standby power. The device operates over a temperature range of -30°C to +85°C (case temperature), making it suitable for consumer and industrial environments. The 200-WFBGA package offers a compact footprint with a ball pitch of 0.5 mm, facilitating high-density PCB designs. Technically, the MT53B256M32D1NP-062 utilizes Micron's advanced DRAM process technology, achieving high speed with low active power. It supports bank group architecture for improved random access performance and includes on-die ECC for enhanced reliability. The device is compliant with JEDEC LPDDR4 standards, ensuring interoperability with a wide range of controllers. Typical applications include flagship smartphones, tablets, AI edge devices, automotive infotainment, and high-end embedded computing modules. Its high bandwidth and low power make it ideal for applications requiring rapid data processing, such as real-time video processing and machine learning inference. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to minimize signal integrity issues. The device requires a stable 1.1V supply and careful routing of the high-speed data lines to maintain signal integrity.
NDL46PFG-8KIT - 4Gb DDR3L SDRAM 256Mx16 | Insignis
The NDL46PFG-8KIT is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at 800 MHz (DDR3L-1600) with a CAS latency of 20 ns. It is designed to comply with all key DDR3L DRAM features, with control and address inputs synchronized to a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling), and all I/Os are synchronized with a differential DQS pair in a source-synchronous fashion. This device is available in a 96-ball FBGA package (7.5x13.5 mm) and supports a maximum operating temperature of 95°C. DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining high bandwidth. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. The NDL46PFG-8KIT is compatible with both 1.5V and 1.35V supplies, offering flexibility in system design. Key features include a 4Gbit density, 16-bit data bus, 800 MHz clock speed (1600 Mbps data rate), and a 20 ns CAS latency. The device supports standard DDR3L features such as on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also includes auto-refresh and self-refresh modes for low-power standby. The architecture uses an 8n-prefetch design, enabling high-speed data transfer with reduced I/O clock frequency. The differential clock inputs (CK and CK#) and data strobes (DQS and DQS#) ensure robust signal integrity for high-speed operation. The 96-ball FBGA package provides excellent thermal and electrical performance, making it suitable for space-constrained applications. Typical applications include servers, networking equipment, industrial computing, and embedded systems requiring high-density, low-power memory. The 1.35V operation is ideal for power-sensitive designs, such as battery-powered devices and energy-efficient data centers. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device supports a wide operating temperature range, making it suitable for industrial environments.
NT5AD512M16 - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
The Nanya Technology NT5AD512M16 is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16 bits, designed for a wide range of computing and embedded applications. Operating from a 1.2V supply, this memory device supports data rates up to 3200 Mbps (DDR4-3200) and is available in a 96-ball FBGA package. The NT5AD512M16 series includes multiple speed and temperature grades, such as the NT5AD512M16C4-JR (commercial, 0°C to +95°C) and NT5AD512M16H4-JR (industrial), providing flexibility for various operating environments. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher bandwidth and lower power consumption compared to DDR3. It achieves data rates of 1600 to 3200 MT/s, with a prefetch buffer of 8n, and operates at a standard voltage of 1.2V, reducing power by up to 40% versus DDR3L. DDR4 is the dominant memory technology for modern servers, desktops, laptops, and increasingly for embedded systems requiring high-speed data processing. Key features of the NT5AD512M16 include auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (ODT), ZQ calibration, and CRC error detection. These features enhance signal integrity, reliability, and ease of integration in high-speed systems. The device supports burst lengths of 8 and 4 (with burst chop), and programmable CAS latency, enabling optimization for specific performance requirements. The NT5AD512M16 utilizes advanced DRAM process technology, achieving high density (8Gb) in a compact 96-ball FBGA package (approximately 9mm x 13mm). The package is optimized for high-speed signaling with minimal parasitic inductance and capacitance, supporting data rates up to 3200 Mbps. The device includes on-die termination (ODT) for improved signal integrity on the data bus, and supports write leveling for proper timing alignment in multi-rank systems. Typical applications include high-performance computing, servers, networking equipment, industrial automation, and embedded systems requiring large memory capacity and high bandwidth. The commercial temperature grade (0°C to +95°C) suits consumer electronics, while the industrial grade (-40°C to +95°C) is ideal for harsh environments. The 512Mx16 organization is particularly suited for applications needing high density per chip, reducing board space and component count. When designing with the NT5AD512M16, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the datasheet for impedance-controlled traces. The device requires a stable 1.2V VDD and 2.5V VPP supply, and the ZQ pin must be connected to a 240-ohm resistor to ground for calibration. Careful attention to signal integrity and power integrity is critical for reliable operation at 3200 Mbps.
NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya
The Nanya Technology NT5AD512M16A4-GZ is a commercial and industrial grade DDR4 SDRAM device organized as 512M x 16 bits, providing 8Gb of dynamic random access memory. It operates from a 1.2V power supply and is housed in a 96-ball TFBGA package, making it suitable for high-density memory applications in computing, networking, and industrial systems. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and embedded systems, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V) and supports higher densities, enabling larger memory capacities in compact form factors. Key features of the NT5AD512M16A4-GZ include a maximum clock frequency of 1200 MHz (DDR4-2400), a 16-bit data bus, and support for interleaved burst lengths of 4 and 8. It incorporates advanced functions such as auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check), data mask, write leveling, and ZQ calibration. These features enhance signal integrity, reliability, and ease of use in high-speed systems. The device is designed for commercial and industrial temperature ranges, ensuring reliable operation in demanding environments. It is RoHS compliant and lead-free, meeting environmental standards. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance, suitable for space-constrained PCB designs. Typical applications include enterprise servers, data centers, networking equipment, industrial automation, and advanced driver assistance systems (ADAS). The high density and bandwidth make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-performance computing. When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including matched trace lengths and appropriate on-die termination (ODT) settings. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper impedance calibration. Additionally, the VTT and VREF supplies should be decoupled with capacitors to minimize noise.
NT5AD512M16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | Nanya
The Nanya NT5AD512M16A4-HR is a commercial and industrial grade DDR4 SDRAM device organized as 512M x 16 bits, providing 8Gb of memory density. It operates from a 1.2V power supply and supports data rates up to 3200 Mbps (PC4-25600), making it suitable for high-bandwidth computing, networking, and embedded applications. The device is housed in a 96-ball TFBGA package, designed for surface-mount assembly. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory technology, succeeding DDR3. It achieves higher bandwidth and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a type of volatile memory that requires continuous power to retain data, and it is a key component in the memory hierarchy of modern computing systems, from servers to embedded controllers. Key features of the NT5AD512M16A4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check) for data integrity, data mask, write leveling, and ZQ calibration. These features enhance signal integrity and reliability in high-speed systems. The device supports a temperature range of 0°C to +95°C, covering commercial and industrial operating conditions. Technically, the NT5AD512M16A4-HR utilizes a 16n prefetch architecture with a 16-bit I/O interface, achieving a peak bandwidth of 25.6 GB/s per device at 3200 Mbps. The built-in temperature sensor enables adaptive refresh rates, reducing power consumption in idle states. The CRC function detects and corrects data transmission errors, which is critical for long-duration, high-reliability applications. Typical applications include servers, data centers, networking equipment, industrial PCs, and high-performance embedded systems. The 512M x 16 organization is ideal for memory modules and systems requiring high density with a moderate bus width, such as DDR4 UDIMMs and SODIMMs. When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the JEDEC DDR4 layout guidelines for signal integrity. The ZQ pin requires a 240-ohm resistor to ground for calibration.
NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya
The Nanya Technology NT5AD512M16B4-HR is a commercial and industrial grade DDR4 SDRAM organized as 512M x 16 bits, delivering 8Gb density in a 96-ball TFBGA package. Operating from a 1.2V supply, this memory device supports high-speed data transfer for demanding embedded, networking, and computing applications. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3 with higher bandwidth, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through on-die termination (ODT) and data bus inversion. As a volatile memory type, it stores data in capacitors that require periodic refreshing, and it is a core component in the memory hierarchy between CPU caches and storage, enabling fast read/write operations for operating systems and applications. Key features of the NT5AD512M16B4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, ZQ calibration, and CRC (Cyclic Redundancy Check) functions. These features enhance signal integrity, simplify system design, and improve reliability in high-speed memory interfaces. Technically, the device uses a CMOS process and supports programmable functions such as CAS latency, burst length, and output drive strength, allowing system designers to optimize performance and power. The 96-ball TFBGA package provides a compact footprint suitable for space-constrained PCB layouts, while the 1.2V operation reduces power consumption compared to DDR3, making it ideal for energy-efficient systems. Typical applications include networking equipment (routers, switches), industrial computing, embedded systems, and consumer electronics such as smart home devices and set-top boxes. The commercial and industrial temperature grade (0°C to +95°C) ensures reliable operation in a wide range of environments. When designing with this DDR4 device, ensure proper termination and layout for the high-speed data bus, and follow the manufacturer's guidelines for ZQ calibration and ODT settings to maintain signal integrity at 3200 Mbps data rates.
NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech
The Nanya Technology NT5AD512M16C4-HR is a high-performance DDR4 SDRAM device organized as 512M x 16 bits, providing 8Gbit of memory density. It operates from a 1.2V supply and supports data rates up to 1.333GHz (DDR4-2666), making it suitable for a wide range of computing, networking, and embedded applications. The device is housed in a 96-ball TFBGA package, offering a compact footprint for space-constrained designs. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3. It achieves higher bandwidth and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a type of volatile memory that requires constant power to retain data, and it is widely used in servers, desktops, laptops, and embedded systems where high-speed data processing is critical. Key features of the NT5AD512M16C4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (DTC), ZQ calibration, and CRC (Cyclic Redundancy Check) for data integrity. These features enhance reliability and performance in demanding environments. The operating temperature range is 0°C to +95°C, suitable for commercial and industrial applications. The device utilizes advanced CMOS technology and a 96-ball TFBGA package, which provides excellent thermal and electrical performance. The 1.2V supply reduces power consumption compared to previous generations, and the built-in temperature sensor enables adaptive refresh rates, further optimizing power usage. The CRC function ensures data integrity during high-speed transfers, critical for server and networking applications. Typical applications include servers, desktop and laptop computers, networking equipment (routers, switches), and embedded systems such as industrial PCs and automotive infotainment. The high density and speed make it ideal for memory-intensive tasks like virtualization, data analytics, and real-time processing. When designing with this DDR4 device, ensure proper signal integrity by following the manufacturer's layout guidelines, including controlled impedance traces and adequate decoupling. The ZQ calibration pin requires a 240-ohm resistor to ground for proper on-die termination calibration.
NT5AD512M16C4-HRI - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
The Nanya Technology NT5AD512M16C4-HRI is a high-performance DDR4 SDRAM device organized as 512M x 16, providing a total density of 8 Gigabits. It operates from a 1.2V power supply and is housed in a 96-pin TFBGA package, making it suitable for space-constrained applications requiring high memory bandwidth and low power consumption. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It features a prefetch buffer of 8n, allowing high-speed data access while maintaining lower operating voltages (1.2V vs 1.5V for DDR3), which reduces power consumption and heat generation. DDR4 is the industry standard for modern computing, networking, and embedded systems, offering improved reliability and performance over previous generations. Key features of the NT5AD512M16C4-HRI include an industrial temperature grade (0°C to +95°C), auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (ODT), ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance signal integrity, data reliability, and system robustness, particularly in demanding industrial environments. The device supports data rates up to 3200 MT/s (per the 'H' speed grade), with a CAS latency of 22 cycles. It utilizes a 16n prefetch architecture and includes on-die ECC for improved data integrity. The 96-ball TFBGA package measures 9mm x 13mm with a 0.8mm ball pitch, offering excellent thermal and electrical performance for high-speed operation. Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The industrial temperature range and robust feature set make it ideal for applications requiring reliable operation in harsh environments, such as factory automation, transportation, and outdoor infrastructure. When designing with this DDR4 device, ensure proper termination and layout practices are followed to maintain signal integrity at high speeds. The ZQ calibration pin requires a 240-ohm resistor to ground, and the VTT and VREF supplies must be properly decoupled. Refer to the Nanya datasheet for detailed PCB layout guidelines and timing parameters.
NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech
The Nanya Technology NT5AD512M16C4-JR is a high-speed, standard DDR4 SDRAM component organized as 512M x16, providing 8Gbit of memory density. It operates from a 1.2V power supply and supports data rates up to 1.6GHz (DDR4-3200), making it suitable for a wide range of computing, networking, and industrial applications. The device is housed in a 96-ball TFBGA package, offering a compact footprint for space-constrained PCB designs. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to its predecessor DDR3. It is a key component in modern computing systems, providing the main memory for processors, and is also used in networking equipment, industrial controllers, and embedded systems. DDR4 operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption and heat generation, which is critical for high-density memory modules and portable devices. Key features of the NT5AD512M16C4-JR include auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (DTC), ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance signal integrity, reliability, and ease of integration in high-speed systems. The operating temperature range is 0°C to +95°C, making it suitable for commercial and industrial environments. Technically, the device supports a burst length of 8 and on-die termination (ODT) for improved signal quality. The ZQ calibration function allows the device to adjust its output driver and ODT impedances to match the system's characteristic impedance, reducing reflections and improving data eye margins. The CRC function provides error detection for data transmitted during write operations, enhancing data integrity in critical applications. Typical applications include consumer electronics (e.g., set-top boxes, smart TVs), industrial automation, networking systems (routers, switches), and smart IoT devices. The high density and speed make it ideal for applications requiring large memory capacity and fast data throughput, such as edge computing and real-time data processing. When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise, and follow the PCB layout guidelines in the datasheet for high-speed signals to maintain signal integrity. The device requires a 1.2V VDD and a separate VPP supply (2.5V) for the wordline driver, which must be properly regulated.
NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology
The Nanya Technology NT5AD512M16C4-JRI is a high-performance DDR4 SDRAM device organized as 512M x 16 bits, providing 8Gb of memory density. It operates at a clock frequency of 1.6GHz (DDR4-3200) with a supply voltage of 1.2V, and is housed in a 96-ball TFBGA package. This component is designed for a wide range of computing and embedded applications, offering high-speed data transfer and low power consumption. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It is the successor to DDR3 and provides higher bandwidth, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through features like on-die termination (ODT) and write leveling. DDR4 is a critical component in modern computing systems, from servers and desktops to embedded and industrial applications. Key features of the NT5AD512M16C4-JRI include auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance reliability and performance in demanding environments. The device supports an operating temperature range of -40°C to +95°C, making it suitable for industrial applications. The NT5AD512M16C4-JRI utilizes advanced CMOS technology and a 96-ball TFBGA package, which offers excellent thermal and electrical performance. The built-in temperature sensor enables efficient thermal management, while the ZQ calibration ensures optimal signal integrity. The CRC function provides error detection for data integrity, which is crucial for mission-critical systems. Typical applications include data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. Its high density and speed make it ideal for networking equipment, servers, and high-performance embedded systems. The wide temperature range and robust feature set ensure reliable operation in harsh environments. When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The ZQ pin requires a 240-ohm resistor to ground for calibration. Follow the DDR4 layout guidelines for signal integrity, including matched trace lengths and proper termination.
NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
The Nanya NT5CB256M16CP-DI is a 4Gb DDR3L SDRAM organized as 256Mx16, operating at 1.35V (DDR3L) with a 96-ball TFBGA package. It supports data rates up to DDR3-1600 (800 MHz clock) and is designed for commercial, industrial, and automotive temperature ranges. This memory device features 8 internal banks, differential clock inputs, and programmable CAS latency (CL), write latency (CWL), and additive latency. It is compliant with JEDEC DDR3L standards and offers on-die termination (ODT) for signal integrity. DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock. DDR3L is widely used in mobile, embedded, and industrial applications where power efficiency is critical. Key features include a 256Mx16 organization (4Gb density), 1.35V supply voltage, 96-ball TFBGA package, and support for data rates up to 1600 Mbps/pin. The device has a programmable CAS latency of 5-11, write latency of 5-9, and additive latency of 0-13. It also features 8 internal banks, differential clock inputs, and on-die termination. The operating temperature range is -40°C to +95°C (industrial) and -40°C to +105°C (automotive). The NT5CB256M16CP-DI uses a 70nm process technology, enabling high density and low power consumption. It incorporates DLL (delay-locked loop) for precise timing, and supports self-refresh and partial array self-refresh for power saving. The device is RoHS compliant and lead-free. Typical applications include embedded systems, networking equipment, industrial automation, automotive infotainment, and solid-state drives. Its low voltage and wide temperature range make it suitable for harsh environments. When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and reference voltage (VREF) for optimal operation.