1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon
MPN: 1ED3323MC12NXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.47 | $2.47 |
| 10 | $2.18 | $21.80 |
| 100 | $1.85 | $185.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.42 | $1,420.00 |
| 3,000 | $1.25 | $3,750.00 |
1ED3323MC12NXUMA1 Overview
An isolated gate driver is a power management IC that provides galvanic isolation and signal-level translation between a low-voltage controller (microcontroller, DSP, or FPGA) and the gate of a high-voltage power transistor. Isolated gate drivers belong to the broader class of power management ICs (gate drivers > driver ICs > power management ICs > semiconductor). They are essential in any system where a logic-level PWM signal must safely switch a power device referenced to a high-voltage or high-dV/dt node, such as IGBT inverters, SiC traction drives, photovoltaic converters, and industrial motor controls. The galvanic isolation barrier (typically coreless transformer or capacitive) protects the low-voltage domain from destructive high-voltage transients.
Key features of the 1ED3323MC12NXUMA1 include 8.5A source / 9A sink peak gate-drive current, 5.7 kVrms galvanic isolation per IEC 60747-17, a wide 3.1V to 5.5V primary-side supply, 9V to 18V secondary-side driver supply, 85 ns typical propagation delay, DESAT-based short-circuit detection, soft turn-off to limit fault current overshoot, and an integrated Miller clamp. The driver also features under-voltage lockout (UVLO) on both primary and secondary sides to prevent driving a power device with insufficient gate voltage, which would otherwise cause high conduction losses. According to the Infineon datasheet, the PG-DSO-16-40 package provides a wide creepage distance suitable for 600V / 1200V class systems.
The 1ED3323MC12NXUMA1 uses Infineon's coreless transformer (CT) isolation technology to achieve the 5.7 kVrms withstand voltage and >100 kV/Β΅s common-mode transient immunity (CMTI). The internal architecture separates the galvanic barrier from the driver output stage, allowing the secondary side to deliver high peak currents at controlled rise/fall times to switch the power device efficiently. Compared with optocoupler-based gate drivers, the CT isolation provides tighter propagation delay matching, lower propagation delay skew, and longer operational lifetime.
Typical applications include industrial motor drives (AC inverter drives for pumps, fans, and servo drives), photovoltaic string inverters and central solar inverters, EV onboard chargers and DC-DC converters, uninterruptible power supplies (UPS), induction heating, and SiC MOSFET-based traction inverters. In a 3-phase solar inverter, for example, six 1ED3323MC12NXUMA1 drivers can each be assigned to one switch position of the IGBT/SiC power module, providing the required high-side/low-side floating supply translation and short-circuit protection on every switching event. Designers should consult the Infineon application note on the EiceDRIVER F3 family for proper bootstrap supply design, DESAT blanking time selection, and PCB creepage/clearance layout recommendations.
When designing with this driver, ensure that the secondary-side supply voltage (VCC2 - VEE2) stays within 9V to 18V for IGBTs or 12V to 18V (sometimes higher with negative VEE) for SiC MOSFETs. The DESAT blanking capacitor must be sized for the actual short-circuit transient of the chosen power module, and the Miller-clamp pin should be tied directly to the gate of the power device via a low-impedance path to prevent parasitic turn-on in half-bridge topologies. A minimum of 8 mm creepage and clearance must be maintained between primary and secondary PCB copper pours per IEC 60747-17 reinforced isolation requirements.
This page synthesizes distributor pricing, datasheet-derived parametric data, cross-brand drop-in equivalents from the verified web data, and practical design notes for the 1ED3323MC12NXUMA1 isolated gate driver IC not found in a single manufacturer datasheet view.
Drop-in alternatives for 1ED3323MC12NXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1ED3323MC12NXUMA1 (same form factor and footprint) β differing in Package, Operating Temperature Range, Isolation Voltage (Vrms), Peak Sink Current, Peak Source Current.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1ED3322MC12N
β Drop-Inπ Reference alternative (not in catalog)
1ED3321MC12N
β Drop-Inπ Reference alternative (not in catalog)
1ED3324MC12N
β Drop-Inπ Reference alternative (not in catalog)
1ED3124MU12HXUMA1
β Drop-Inβ In Stock
$0.89 / Unit
View Datasheet β1EDN8511BXUSA1
β Drop-Inβ In Stock
$0.54 / Unit
View Datasheet β1ED3323MC12NXUMA1 Maximum Ratings & Electrical Characteristics
| Function | Single-channel isolated gate driver |
| Isolation Voltage (Vrms) | 5.7 kVrms |
| Peak Source Current | 8.5 A |
| Peak Sink Current | 9 A |
| Number of Channels | 1 |
| Primary-Side Supply Voltage (VDD1) | 3.1 V to 5.5 V |
| Secondary-Side Supply Voltage (VCC2) | 9 V to 18 V |
| Propagation Delay (typ) | 85 ns |
| Protection Features | DESAT short-circuit, soft-off, Miller clamp, UVLO |
| Operating Temperature Range | -40 C to +125 C |
| Package | PG-DSO-16-40 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Family | EiceDRIVER F3 Enhanced (1ED332x) |
| Isolation Technology | Coreless Transformer (CT) |
1ED3323MC12NXUMA1 Pin Configuration
| Pin 1 | VDD1 β Primary-side supply voltage (3.1V to 5.5V) |
| Pin 2 | GND1 β Primary-side ground reference |
| Pin 3 | IN+ β Non-inverting PWM input (active high) |
| Pin 4 | IN- β Inverting PWM input |
| Pin 5 | NC β Not connected (per datasheet) |
| Pin 6 | FLT β Fault output (open-drain, asserts on DESAT) |
| Pin 7 | RST β Reset input (active low, clears fault latch) |
| Pin 8 | DESAT β DESAT short-circuit detection input |
| Pin 9 | GND2 β Secondary-side ground reference |
| Pin 10 | VEE2 β Secondary-side negative supply (0V or negative bias) |
| Pin 11 | VCC2 β Secondary-side positive supply (9V to 18V) |
| Pin 12 | OUT β Gate-driver output to power device gate |
| Pin 13 | CLAMP β Miller clamp output (active low) |
| Pin 14 | NC β Not connected (per datasheet) |
| Pin 15 | NC β Not connected (per datasheet) |
| Pin 16 | NC β Not connected (per datasheet) |
Typical Applications
1ED3323MC12NXUMA1 is suitable for 6 applications: Industrial Motor Drive (VFD) Inverter, Photovoltaic (Solar) String Inverter, EV Onboard Charger / DC-DC Converter, Uninterruptible Power Supply (UPS), SiC MOSFET Traction Inverter, Induction Heating Resonant Inverter.
Industrial Motor Drive (VFD) Inverter
The 1ED3323MC12NXUMA1 fits industrial variable-frequency drives (VFDs) because its 8.5A/9A peak gate drive can switch 600V/1200V IGBT modules quickly, while the 5.7 kVrms reinforced isolation (IEC 60747-17) protects the low-voltage control domain from high-side dV/dt transients in 3-phase inverter stages. Placed between the MCU/DSP and the IGBT half-bridge, it supplies active-low/active-high PWM signals with 85 ns propagation delay, enabling low dead-time and reduced switching losses. The integrated DESAT short-circuit protection with soft-off prevents fault current overshoot that can otherwise destroy the IGBT module during a short-circuit event - critical for industrial reliability.
Recommended
Photovoltaic (Solar) String Inverter
In solar string inverters, the 1ED3323MC12NXUMA1 drives SiC MOSFET power stages where its high peak gate current (8.5A source, 9A sink) and low propagation delay (85 ns) enable the high switching frequencies (50-100 kHz) needed for compact LLC and HERIC topologies. The 5.7 kVrms isolation supports 1200V DC-link architectures found in residential and commercial solar inverters, while the wide VCC2 range (9-18V) accommodates the 18V gate drive typically required by SiC MOSFETs. The integrated Miller clamp prevents parasitic turn-on in half-bridge configurations during high dV/dt switching events - critical for long-term reliability in 25-year solar installations.
Recommended
EV Onboard Charger / DC-DC Converter
The 1ED3323MC12NXUMA1 is well suited to electric-vehicle onboard chargers and high-voltage DC-DC converters because its 5.7 kVrms reinforced isolation satisfies the safety isolation required between the high-voltage traction battery domain (400V/800V) and the 12V low-voltage domain, while its 8.5A/9A peak drive enables fast switching of SiC MOSFETs in totem-pole PFC and DAB stages. The DESAT short-circuit protection responds within microseconds to overcurrent events, satisfying automotive functional-safety requirements for OBC and DCDC converter designs. Its PG-DSO-16-40 wide-body package provides the creepage distances required for automotive high-voltage DC-link designs.
Recommended
Uninterruptible Power Supply (UPS)
For double-conversion UPS systems, the 1ED3323MC12NXUMA1 drives the IGBT inverter stage that converts battery DC to AC mains output. Its 5.7 kVrms isolation maintains safety separation between the battery stack and the user-accessible AC output, while its 85 ns propagation delay enables the tight timing margins required for sinusoidal PWM in 50/60 Hz output synthesis. The integrated DESAT and soft-off protections prevent catastrophic IGBT failure in the event of an output short-circuit, preserving UPS reliability for mission-critical loads. The driver also supports operation over the -40C to +125C industrial temperature range.
Recommended
SiC MOSFET Traction Inverter
In SiC MOSFET traction inverters for EV powertrains, the 1ED3323MC12NXUMA1 supports the high switching frequencies (up to 100 kHz) and high dV/dt (up to 50 kV/us) of SiC devices, thanks to its high CMTI rating and 8.5A/9A peak drive capability per the Infineon datasheet. The 18V gate-drive capability (VCC2 max) accommodates typical SiC MOSFET gate-drive requirements, and the optional negative VEE2 supply prevents parasitic turn-off during high dV/dt events. Wide creepage PG-DSO-16-40 package supports 800V DC-link traction systems. The DESAT short-circuit protection responds fast enough to protect SiC MOSFETs, which have lower short-circuit withstand time than silicon IGBTs.
Recommended
Induction Heating Resonant Inverter
In induction-heating resonant inverters operating at 20-100 kHz, the 1ED3323MC12NXUMA1 drives the IGBT half-bridge or full-bridge resonant tank. Its 85 ns propagation delay supports the precise dead-time control required to avoid shoot-through, while its 8.5A/9A peak drive can switch the IGBTs quickly enough to minimize switching losses at these elevated frequencies. The integrated Miller clamp prevents cross-conduction in half-bridge stages, and DESAT protection responds to overcurrent faults before the resonant tank's stored energy destroys the IGBTs. The 5.7 kVrms isolation is sufficient for 1200V DC-link residential and industrial induction cooktops.
Recommended
Recommended Products Summary
Engineering reference data for 1ED3323MC12NXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1ED3322MC12N | 1ED3321MC12N | 1ED3324MC12N | 1ED3124MU12HXUMA1 | 1EDN8511BXUSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-16-40 | PG-DSO-16-40 - same | PG-DSO-16-40 - same | PG-DSO-16-40 - same | PG-DSO-16-40 - same | PG-DSO-16-40 - same |
| DESAT Protection | Yes (with soft-off) | Yes (with soft-off) | No | Yes | Yes | No |
| Miller Clamp | Yes (integrated) | Yes (integrated) | Yes | Yes | Yes | No |
Key Differentiators
- Higher peak gate current than 1ED3322 family member (vs 1ED3322MC12N)
- Integrated DESAT with soft-off vs basic driver (vs 1ED3321MC12N)
- Wide 9V to 18V VCC2 range supports SiC and IGBT (vs 1ED3124MU12HXUMA1)
Design Notes
Estimated: At full bipolar swing VCC2=15V, VEE2=0V, and a 1 MHz switching frequency into a 100 nC total gate-charge SiC MOSFET module, the 1ED3323MC12NXUMA1 gate-drive losses are approximately CV^2f = 100nC x 15V x 1MHz x 2 (charge/discharge) = 4.5W per channel. Provide adequate copper pours on both VCC2 and VEE2 pins to dissipate this loss without exceeding the 125C junction limit. Use low-ESR ceramic bypass capacitors (10 uF X7R + 100 nF NP0) within 5 mm of each supply pin to handle the high-frequency switching current.
Maintain at least 8 mm creepage and clearance between the primary-side copper (VDD1, GND1, IN+, IN-, FLT, RST, DESAT) and the secondary-side copper (VCC2, VEE2, OUT, CLAMP) on the PCB top and inner layers, in accordance with IEC 60747-17 reinforced isolation requirements. Avoid placing any traces, vias, or copper pours in the isolation barrier region. The PG-DSO-16-40 package footprint provides the standard wide-body SO pattern required to maintain this creepage.
Do not exceed the absolute maximum secondary-side supply voltage of 20V on VCC2, or 5.5V on VDD1, or 5V on the DESAT pin - these limits are stated in the Infineon EiceDRIVER F3 datasheet and exceeding them will damage the device. The DESAT blanking capacitor should be sized at 100 pF to 1 nF depending on the SiC/IGBT short-circuit transient. The Miller-clamp pin must connect directly to the gate of the power device, not to OUT, to clamp the gate below the turn-on threshold during dV/dt events.
Estimated: At 4.5W gate-drive loss (1 MHz, 100 nC gate charge) and theta_JA of approximately 90 C/W for the PG-DSO-16-40 package, the junction temperature rises about 405 C above ambient - clearly the part cannot switch 100 nC at 1 MHz without substantial cooling. At more realistic conditions (50 kHz, 100 nC), the loss is 0.225W, giving a junction rise of about 20C, well within the 125C operating limit. Designers must calculate gate-drive losses for their specific frequency and Qg combination.
Compliance Information
RoHS compliant per Infineon product page and DigiKey listing. Industrial-grade temperature range -40C to +125C. Not AEC-Q100 qualified - see automotive-grade options in the EiceDRIVER F3 Enhanced family if automotive certification is required.
